RF Transistors - Page 37

2360 RF Transistors from 26 Manufacturers meet your specification.
Description:GaN Power Transistor
Application Industry:
Wireless Infrastructure, Wireless Communication
Transistor Type:
HEMT
Technology:
GaN on SiC, GaN
CW/Pulse:
CW
Frequency:
1.805 to 1.88 GHz
Power:
49.29 dBm
Package Type:
Flanged
Power(W):
84.92 W
Gain:
18.9 dB
Supply Voltage:
48 V
Package:
RF12002KR3
more info
Description:49.03 dBm (80 W), LDMOS Transistor from 1805 to 2170 MHz
Application Industry:
Wireless Infrastructure
Transistor Type:
LDMOS
Technology:
Si
CW/Pulse:
Pulse, CW
Frequency:
1.805 to 2.17 GHz
Power:
49.03 dBm
Package Type:
Surface Mount
Power(W):
79.98 W
Supply Voltage:
28 V
Package:
SOT1212-2
more info
Description:HIGH EFFICIENCY HETEROJUNCTION POWER FET CHIP (.25µm x 1200µm)
Application Industry:
Test & Measurement, Aerospace & Defence, Commercia...
Transistor Type:
pHEMT
Technology:
GaAs
CW/Pulse:
CW
Frequency:
DC to 26.5 GHz
Power:
30.5 dBm
Package Type:
Chip
Power(W):
1.12 W
Gain:
6.5 to 11 dB
Supply Voltage:
8 V
more info
A2T09D400-23N Image
Description:AIRFAST RF POWER LDMOS TRANSISTOR 716-960 MHz, 93 W AVG., 28 V
Application Industry:
Wireless Infrastructure
Transistor Type:
LDMOS
Technology:
Si
CW/Pulse:
Pulse, CW
Frequency:
716 to 960 MHz
Power:
49.68 dBm
Package Type:
Flanged
Power(W):
92.9 W
Supply Voltage:
28 V
Package:
OM--1230--4L2S PLASTIC
more info
Description:DC to 520 MHz, MOSFET Transistor
Application Industry:
Wireless Infrastructure, Broadcast
Transistor Type:
MOSFET
Technology:
Si
CW/Pulse:
CW
Frequency:
DC to 520 MHz
Power:
39.03 to 39.54 dBm
Package Type:
Flanged
Power(W):
8.99 W
Gain:
10 dB
Supply Voltage:
7.2 V
more info
Description:960 MHz to 1.21 GHz, 150 W Transistor for Pulsed Avionics Applications
Application Industry:
Aerospace & Defence
Transistor Type:
MOSFET
Technology:
Si
CW/Pulse:
Pulse
Frequency:
960 MHz to 1.21 GHz
Power:
51.76 dBm
Package Type:
Flanged
Power(W):
150 W
Gain:
20 dB
Supply Voltage:
50 V
more info
Description:170 W GaN-on-SiC Transistor from 1880 to 2025 MHz
Application Industry:
Cellular, Wireless Infrastructure, Broadcast, Base...
Transistor Type:
HEMT
Technology:
GaN on SiC
CW/Pulse:
CW
Frequency:
1880 to 2025 MHz
Power:
44.77 dBm
Package Type:
Surface Mount, Flanged
Power(W):
30 W
Gain:
17 dB
Supply Voltage:
48 V
more info
Description:1025 to 1150 MHz, 9.8 dB Bipolar Transistor
Application Industry:
Aerospace & Defence, Avionics
Transistor Type:
Bipolar
Technology:
Si
CW/Pulse:
Pulse
Frequency:
1.025 to 1.150 GHz
Power:
60.41 to 61.91 dBm
Package Type:
Flanged
Power(W):
1552.39 W
Gain:
9.8 dB
Supply Voltage:
60 V
Package:
Ceramic
more info
Description:GaAs HEMT from 4 GHz
Transistor Type:
HEMT
Technology:
GaAs
Frequency:
4 GHz
Package Type:
Flanged
Gain:
14.5 dB
Supply Voltage:
2 V
Package:
LG
more info
Description:104 W, GaN HEMT Transistor from DC to 8 GHz
Application Industry:
Radar, Wireless Infrastructure
Transistor Type:
HEMT
Technology:
GaN on SiC, GaN
CW/Pulse:
CW
Frequency:
DC to 8 GHz
Power:
50.17 dBm
Package Type:
Die
Power(W):
103.99 W
Supply Voltage:
48 V
more info
Description:15 W, LDMOS / MOSFET RF Transistor from DC to 2 GHz
Transistor Type:
LDMOS
Technology:
Si
CW/Pulse:
CW
Frequency:
DC to 2 GHz
Power:
41.761 dBm
Power(W):
15 W
Supply Voltage:
13.6 V
more info

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