RF Transistors - Page 37

2357 RF Transistors from 26 Manufacturers meet your specification.
IE18110P Image
Description:GaN Power Transistor
Application Industry:
Wireless Infrastructure, Wireless Communication
Transistor Type:
HEMT
Technology:
GaN on SiC, GaN
CW/Pulse:
CW
Frequency:
1.805 to 1.88 GHz
Power:
50.41 dBm
Package Type:
Flanged
Power(W):
109.9 W
Gain:
18.9 dB
Supply Voltage:
48 V
Package:
NS-AS01
more info
A2G22S251-01S Image
Description:AIRFAST RF Power GaN Transistor, 2300-2690 MHz, 60 W AVG., 48 V
Application Industry:
Wireless Infrastructure
Transistor Type:
HEMT
Technology:
GaN on SiC, GaN
CW/Pulse:
Pulse, CW
Frequency:
1.805 to 2.2 GHz
Power:
46.81 dBm
Package Type:
Flanged
Power(W):
47.97 W
Supply Voltage:
48 V
Package:
NI--400S--2S
more info
Description:DC to 527 MHz, MOSFET Transistor
Application Industry:
Wireless Infrastructure, Broadcast
Transistor Type:
MOSFET
Technology:
Si
CW/Pulse:
CW
Frequency:
DC to 527 MHz
Power:
35.56 to 36.02 dBm
Package Type:
Flanged
Power(W):
4 W
Supply Voltage:
3.6 V
more info
Description:1.03 to 1.09 GHz, 35 W Transistor for Pulsed Avionics Applications
Application Industry:
Aerospace & Defence
Transistor Type:
MOSFET
Technology:
Si
CW/Pulse:
Pulse
Frequency:
1.03 to 1.09 GHz
Power:
45.44 dBm
Package Type:
Surface Mount
Power(W):
35 W
Gain:
20 to 21.5 dB
Supply Voltage:
50 V
more info
Description:220 W, GaN on SiC OptiGaN HEMT from 1805 to 1880 MHz for 4G LTE & Open RAN Applications
Application Industry:
Cellular, Wireless Infrastructure, Broadcast, Base...
Transistor Type:
HEMT
Technology:
GaN on SiC
CW/Pulse:
CW
Frequency:
1805 to 1880 MHz
Power:
46.53 dBm
Package Type:
Surface Mount, Flanged
Power(W):
45 W
Gain:
15.8 dB
Supply Voltage:
48 V
more info
Description:653 to 687 MHz, Bipolar Transistor
Application Industry:
Aerospace & Defence, Avionics
Transistor Type:
Bipolar
Technology:
Si
CW/Pulse:
Pulse
Frequency:
653 to 687 MHz
Power:
40 dBm
Package Type:
Flanged
Power(W):
10 W
Gain:
10.2 dB
Supply Voltage:
50 V
more info
Description:GaAs FET from 2 GHz
Application Industry:
Communication, Wireless Infrastructure
Transistor Type:
FET
Technology:
GaAs
Frequency:
2 GHz
Power:
23 dBm
Package Type:
Flanged
Power(W):
0.19 W
Supply Voltage:
3 to 6 V
more info
Description:31.41 W, GaN HEMT Transistor from DC to 6 GHz
Application Industry:
Wireless Infrastructure, Test & Measurement, Radar
Transistor Type:
HEMT
Technology:
GaN on SiC, GaN
CW/Pulse:
CW, Pulse
Frequency:
DC to 6 GHz
Power:
44.97 dBm
Package Type:
Flanged
Power(W):
31.41 W
Supply Voltage:
28 V
more info
PD55015-E Image
Description:15 W, LDMOS / MOSFET RF Transistor from 480 to 520 MHz
Application Industry:
Broadcast, Commercial, Wireless Infrastructure
Transistor Type:
LDMOS
Technology:
Si
CW/Pulse:
CW
Frequency:
480 to 520 MHz
Power:
41.76 dBm
Package Type:
Surface Mount
Power(W):
15 W
Supply Voltage:
12.5 to 15.5 V
more info
WG028031350I Image
Description:350 W, GaN on SiC Power Transistor from 2.8 to 3.1 GHz
Application Industry:
Radar, Wireless Infrastructure
Transistor Type:
HEMT
Technology:
GaN on SiC, GaN
CW/Pulse:
CW
Frequency:
2.8 to 3.1 GHz
Power:
55.44 dBm
Package Type:
Flanged
Power(W):
349.95 W
Supply Voltage:
50 V
more info
Description:High Power Rev 7 GaAs Power FET
Application Industry:
Wireless Infrastructure
Transistor Type:
MESFET
Technology:
GaAs
CW/Pulse:
CW
Frequency:
DC to 6 GHz
Power:
35 dBm
Package Type:
Flanged
Power(W):
3.16 W
Supply Voltage:
7 V
Package:
Ceramic
more info

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