RF Transistors - Page 38

2357 RF Transistors from 26 Manufacturers meet your specification.
Description:200 W Asymmetrical Doherty GaN HEMT from 2520 to 2630 MHz
Application Industry:
Wireless Infrastructure, Wireless Communication
Transistor Type:
HEMT
Technology:
GaN on SiC
CW/Pulse:
Pulse
Frequency:
2520 to 2630 MHz
Power:
46 dBm
Package Type:
Flanged
Power(W):
40 W
Gain:
14.1 to 14.5 dB
Supply Voltage:
48 to 52 V
Package:
RF18010DKR3
more info
Description:90 W, Si LDMOS Power Transistor
Application Industry:
Aerospace & Defence, Broadcast, Wireless Infrastru...
Transistor Type:
LDMOS
Technology:
Si
Frequency:
1 to 500 MHz
Power:
49 dBm
Package Type:
Flanged
Power(W):
90 W
more info
Description:RF POWER VERTICAL MOSFET
Application Industry:
Broadcast
Transistor Type:
MOSFET
Technology:
Si
CW/Pulse:
Pulse
Frequency:
DC to 175 MHz
Power:
54.77 dBm
Package Type:
Flanged
Power(W):
299.92 W
Supply Voltage:
50 V
Package:
T12
more info
Description:AlGaAs/InGaAs pHEMT for Military & Space Applications Up to 12 GHz
Application Industry:
Commercial, Military, Space, Wireless Infrastructu...
Transistor Type:
pHEMT
Technology:
AlGaAs/InGaAs
CW/Pulse:
CW
Frequency:
DC to 12 GHz
Power:
30.5 dBm
Package Type:
Chip
Power(W):
1.12 W
Supply Voltage:
2 to 8 V
more info
Description:15 W GaN-on-SiC HEMT from DC to 8 GHz
Application Industry:
Radar, Test & Measurement, Communication, Wireless...
Transistor Type:
HEMT
Technology:
GaN, GaN on SiC
CW/Pulse:
Pulse, CW
Frequency:
DC to 8 GHz
Power:
41.76 dBm
Package Type:
Surface Mount
Power(W):
15 W
Gain:
16 to 17 dB
Supply Voltage:
50 V
Package:
DFN 14 Lead
more info
Description:2.9 to 3.3 GHz, HEMT Transistor
Application Industry:
Radar, Aerospace & Defence, Test & Measurement, Wi...
Transistor Type:
HEMT
Technology:
GaN on SiC, GaN
CW/Pulse:
Pulse
Frequency:
2.9 to 3.3 GHz
Power:
56.99 dBm
Package Type:
Surface Mount
Power(W):
500.03 W
Gain:
15.5 dB
Supply Voltage:
28 to 55 V
more info
Description:130 W GaN HEMT Transistor from DC to 2.5 GHz
Application Industry:
Test & Measurement, Aerospace & Defence, Wireless ...
Transistor Type:
HEMT
Technology:
GaN on SiC, GaN
Frequency:
DC to 2.5 GHz
Power:
51.14 dBm
Package Type:
Flanged
Power(W):
130 W
Gain:
20 dB
Supply Voltage:
28 V
more info
Description:46.02 dBm (40 W), LDMOS Transistor from 1805 to 2170 MHz
Application Industry:
Wireless Infrastructure
Transistor Type:
LDMOS
Technology:
Si
CW/Pulse:
Pulse, CW
Frequency:
1.805 to 2.17 GHz
Power:
46.02 dBm
Package Type:
Surface Mount
Power(W):
39.99 W
Supply Voltage:
28 V
Package:
SOT1212-2
more info
Description:HIGH EFFICIENCY HETEROJUNCTION POWER FET CHIP (.25µm x 400µm)
Application Industry:
Test & Measurement, Aerospace & Defence, Commercia...
Transistor Type:
pHEMT
Technology:
GaAs
CW/Pulse:
CW
Frequency:
DC to 26.5 GHz
Power:
25.5 dBm
Package Type:
Chip
Power(W):
0.35 W
Gain:
8.5 to 13.5 dB
Supply Voltage:
8 V
more info
MMRF1304GNR1 Image
Description:Wideband RF Power LDMOS Transistor, 1.8 - 2000 MHz, 25 W, 50 V
Application Industry:
Wireless Infrastructure, Aerospace & Defence, Rada...
Transistor Type:
LDMOS
Technology:
Si
CW/Pulse:
Pulse, CW
Frequency:
1.8 MHz to 2 GHz
Power:
43.98 dBm
Package Type:
Flanged
Power(W):
25 W
Supply Voltage:
50 V
Package:
TO--270G--2 PLASTIC
more info
Description:DC to 175 MHz, MOSFET Transistor
Application Industry:
Wireless Infrastructure, Aerospace & Defence, Broa...
Transistor Type:
MOSFET
Technology:
Si
CW/Pulse:
CW
Frequency:
DC to 175 MHz
Power:
40.61 dBm
Package Type:
Flanged
Power(W):
11.51 W
Supply Voltage:
7.2 V
more info

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