RF Transistors - Page 38

2360 RF Transistors from 26 Manufacturers meet your specification.
IE08330D Image
Description:GaN Power Transistor
Application Industry:
Wireless Infrastructure, Wireless Communication
Transistor Type:
HEMT
Technology:
GaN on SiC, GaN
CW/Pulse:
CW
Frequency:
869 to 894 GHz
Power:
55.18 dBm
Package Type:
Flanged
Power(W):
329.61 W
Gain:
20.5 dB
Supply Voltage:
48 V
Package:
RF24001DKR3
more info
WG60002SF/P Image
Description:2 W, GaN on SiC Power Transistor from DC to 6 GHz
Application Industry:
Aerospace & Defence, Broadcast, Wireless Infrastru...
Transistor Type:
HEMT
Technology:
GaN on SiC, GaN
CW/Pulse:
CW
Frequency:
DC to 6 GHz
Power:
33.01 dBm
Package Type:
Flanged
Power(W):
2 W
Supply Voltage:
28 V
more info
Description:High Power Rev 7 GaAs Power FET
Application Industry:
Wireless Infrastructure
Transistor Type:
MESFET
Technology:
GaAs
CW/Pulse:
CW
Frequency:
DC to 6 GHz
Power:
38 dBm
Package Type:
Flanged
Power(W):
6.31 W
Supply Voltage:
7 V
Package:
Ceramic
more info
Description:15 W, Si LDMOS Power Transistor
Application Industry:
Aerospace & Defence, Broadcast, Wireless Infrastru...
Transistor Type:
LDMOS
Technology:
Si
Frequency:
1 to 1000 MHz
Power:
41 dBm
Package Type:
Flanged
Power(W):
15 W
more info
Description:Space Qualified LOW NOISE FETS from 4 to 12 GHz
Application Industry:
Military, Space, Test & Measurement, Wireless Infr...
Transistor Type:
FET
CW/Pulse:
CW
Frequency:
4 to 12 GHz
Power:
16 dBm
Package Type:
Chip
Power(W):
0.04 W
Gain:
10 to 13 dB
more info
Description:GaN-on-SiC HEMT Transistorfrom 1.2 to 1.4 GHz
Application Industry:
Aerospace & Defence, Radar, Wireless Infrastructur...
Transistor Type:
HEMT
Technology:
GaN on SiC, GaN
CW/Pulse:
Pulse, CW
Frequency:
1.2 to 1.4 GHz
Power:
54.96 dBm(CW, at 3dB Compression), 56.7 dBm(Pulsed
Package Type:
Ceramic
Power(W):
313 W(CW, at 3dB Compression), 468 W(Pulsed
Gain:
17.5 dB(CW), 17.8 dB(Pulsed)
Supply Voltage:
45 V(CW), 50 V(Pulsed)
more info
Description:25-W, 18.0-GHz, GaN HEMT Die
Application Industry:
Radar, SATCOM
Transistor Type:
HEMT
Technology:
GaN on SiC, GaN
CW/Pulse:
CW
Frequency:
10 MHz to 18 GHz
Power:
43.97 dBm
Package Type:
Die
Power(W):
24.95 W
Supply Voltage:
10 V
more info
BLA9G1011L-300 Image
Description:300 W LDMOS power transistor for avionics applications at frequencies from 1030 MHz to 1090 MHz
Application Industry:
Aerospace & Defence, RF Energy, Avionics, Wireless...
Transistor Type:
LDMOS
Technology:
Si
CW/Pulse:
Pulse
Frequency:
1.03 to 1.09 GHz
Power:
55.01 dBm
Package Type:
Surface Mount
Power(W):
316.96 W
Supply Voltage:
32 V
Package:
SOT502A
more info
Description:HIGH EFFICIENCY HETEROJUNCTION POWER FET CHIP (.25µm x 800µm)
Application Industry:
Test & Measurement, Aerospace & Defence, Commercia...
Transistor Type:
pHEMT
Technology:
GaAs
CW/Pulse:
CW
Frequency:
DC to 26.5 GHz
Power:
28.5 dBm
Package Type:
Chip
Power(W):
0.71 W
Gain:
7 to 11 dB
Supply Voltage:
8 V
more info
AFT09S200W02S Image
Description:Airfast RF Power LDMOS Transistor, 716-960 MHz, 41 W Avg., 28 V
Application Industry:
Wireless Infrastructure
Transistor Type:
LDMOS
Technology:
Si
CW/Pulse:
Pulse, CW
Frequency:
920 to 960 MHz
Power:
47.48 dBm
Package Type:
Flanged
Power(W):
55.98 W
Supply Voltage:
28 V
Package:
NI--780S--2L
more info
Description:175 to 530 MHz, MOSFET Transistor
Application Industry:
Wireless Infrastructure, Broadcast
Transistor Type:
MOSFET
Technology:
Si
CW/Pulse:
CW
Frequency:
175 to 530 MHz
Power:
48.75 to 49.24 dBm
Package Type:
Flanged
Power(W):
83.95 W
Supply Voltage:
12.5 V
more info

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