RF Transistors - Page 49

2357 RF Transistors from 26 Manufacturers meet your specification.
Description:GaN Power Transistor
Application Industry:
Wireless Infrastructure, Wireless Communication
Transistor Type:
HEMT
Technology:
GaN on SiC, GaN
CW/Pulse:
CW
Frequency:
2.62 to 2.69 GHz
Power:
55.89 dBm
Package Type:
Flanged
Power(W):
388.15 W
Gain:
13.8 dB
Supply Voltage:
48 V
Package:
RF24001DKR3
more info
Description:195 W, GaN on SiC OptiGaN HEMT from 2580 to 2630 MHz for 4G LTE & Open RAN Applications
Application Industry:
Cellular, Wireless Infrastructure, Broadcast, Base...
Transistor Type:
HEMT
Technology:
GaN on SiC
CW/Pulse:
CW
Frequency:
2580 to 2630 MHz
Power:
45.05 dBm
Package Type:
Surface Mount, Flanged
Power(W):
32 W
Gain:
14.4 dB
Supply Voltage:
48 V
more info
Description:2700 to 2900 MHz, 11 dB GaN Transistor
Application Industry:
Radar
Transistor Type:
HEMT
Technology:
GaN on SiC, GaN
CW/Pulse:
Pulse
Frequency:
2.7 to 2.9 GHz
Power:
46.02 dBm
Package Type:
Flanged
Power(W):
39.99 W
Gain:
11 dB
Supply Voltage:
50 V
Package:
Ceramic
more info
Description:GaN on SiC, GaN HEMT from 13.75 to 14.5 GHz
Application Industry:
Communication, SATCOM, Broadcast, Wireless Infrast...
Transistor Type:
HEMT
Technology:
GaN on SiC, GaN
CW/Pulse:
CW
Frequency:
13.75 to 14.5 GHz
Power:
47 to 48 dBm
Package Type:
Flanged
Power(W):
50.12 to 63.1 W
Supply Voltage:
24 V
more info
Description:57 W, GaN HEMT Transistor from DC to 5 GHz
Application Industry:
Wireless Infrastructure, Test & Measurement, Radar
Transistor Type:
HEMT
Technology:
GaN on SiC, GaN
CW/Pulse:
CW, Pulse
Frequency:
DC to 5 GHz
Power:
47.56 dBm
Package Type:
Flanged
Power(W):
57.02 W
Supply Voltage:
28 V
more info
RF3L05200CB4 Image
Description:200 W, LDMOS RF Transistor operating at 1000 MHz
Application Industry:
Avionics, Commercial, Wireless Infrastructure
Transistor Type:
LDMOS
Technology:
Si
CW/Pulse:
CW
Frequency:
1000 MHz
Power:
53.01 dBm
Package Type:
Flanged
Power(W):
200 W
Supply Voltage:
28 V / 32 V
more info
WG030034280I Image
Description:280 W, GaN on SiC Power Transistor from 3 to 3.4 GHz
Application Industry:
Radar, Wireless Infrastructure
Transistor Type:
HEMT
Technology:
GaN on SiC, GaN
CW/Pulse:
CW
Frequency:
3 to 3.4 GHz
Power:
54.47 dBm
Package Type:
Flanged
Power(W):
279.9 W
Supply Voltage:
42 V
more info
Description:Ceramic Package GaN AM060WX-BI-R Power HEMT DC-15GHz
Application Industry:
Wireless Infrastructure, Radar, Broadcast
Transistor Type:
HEMT
Technology:
GaN on SiC, GaN
CW/Pulse:
CW
Frequency:
DC to 15 GHz
Power:
46.1 to 45.7 dBm (P5dB)
Package Type:
Die
Power(W):
40.74 W
Supply Voltage:
28 V
more info
Description:60 W, Si VDMOS Power Transistor
Application Industry:
Aerospace & Defence, Broadcast, Wireless Infrastru...
Transistor Type:
VDMOS
Technology:
Si
Frequency:
1 to 175 MHz
Power:
47 dBm
Package Type:
Flanged
Power(W):
60 W
more info
Description:280 Watts, 50 Volts, 200 us, 20% S-Band Radar 3100 - 3500 MHz
Application Industry:
Radar
Transistor Type:
HEMT
Technology:
GaN on SiC, GaN
CW/Pulse:
Pulse
Frequency:
3.1 to 3.5 GHz
Power:
54.47 to 55.19 dBm
Package Type:
Flanged
Power(W):
330.37 W
Supply Voltage:
50 V
Package:
55-KR
more info
Description:Space Qualified GaAs FETs at 12 GHz
Application Industry:
Military, Space, Test & Measurement, Wireless Infr...
Transistor Type:
FET
Technology:
GaAs
CW/Pulse:
CW
Frequency:
12 GHz
Power:
24.5 dBm
Package Type:
Chip
Power(W):
0.28 W
more info

FiltersReset All

Application Industry

Transistor Type

Technology

CW/Pulse

Frequency

 
 
Apply

Power (dBm)

Apply

Power(W)

Apply

Gain (dB)

Apply

Supply Voltage (V)

Apply

Package Type