RF Transistors - Page 51

2360 RF Transistors from 26 Manufacturers meet your specification.
Description:GaN Power Transistor
Application Industry:
Wireless Infrastructure, Wireless Communication
Transistor Type:
HEMT
Technology:
GaN on SiC, GaN
CW/Pulse:
CW
Frequency:
3.4 to 3.6 GHz
Power:
42.7 dBm
Package Type:
Flanged
Power(W):
19 W
Gain:
17.3 dB
Supply Voltage:
48 V
Package:
RF12002KR3
more info
SD57045-01 Image
Description:45 W, LDMOS / FET RF Transistor from 925 to 965 MHz
Application Industry:
Wireless Infrastructure, Commercial
Transistor Type:
LDMOS
Technology:
Si
CW/Pulse:
CW
Frequency:
925 to 965 MHz
Power:
46.53 dBm
Package Type:
Flanged
Power(W):
45 W
Supply Voltage:
28 V
more info
WGB01004050F Image
Description:50 W, GaN on SiC Power Transistor from 1 to 4 GHz
Application Industry:
Aerospace & Defence, Wireless Infrastructure
Transistor Type:
HEMT
Technology:
GaN on SiC, GaN
CW/Pulse:
CW
Frequency:
1 to 4 GHz
Power:
46.98 dBm
Package Type:
Flanged
Power(W):
49.89 W
Supply Voltage:
50 V
more info
Description:Ceramic Package GaN AM060WX-BI-R Power HEMT DC-15GHz
Application Industry:
Wireless Infrastructure, Radar, Broadcast
Transistor Type:
HEMT
Technology:
GaN on SiC, GaN
CW/Pulse:
CW
Frequency:
DC to 15 GHz
Power:
46.1 to 45.7 dBm (P5dB)
Package Type:
Die
Power(W):
40.74 W
Supply Voltage:
28 V
more info
Description:12 W, Si VDMOS Power Transistor
Application Industry:
Aerospace & Defence, Broadcast, Wireless Infrastru...
Transistor Type:
VDMOS
Technology:
Si
Frequency:
1 to 1000 MHz
Power:
40 dBm
Package Type:
Flanged
Power(W):
12 W
more info
Description:AlGaAs/InGaAs pHEMT for Military & Space Applications Up to 12 GHz
Application Industry:
Commercial, Military, Space, Wireless Infrastructu...
Transistor Type:
pHEMT
Technology:
AlGaAs/InGaAs
CW/Pulse:
CW
Frequency:
DC to 12 GHz
Power:
30.5 dBm
Package Type:
Chip
Power(W):
1.12 W
Supply Voltage:
2 to 8 V
more info
Description:RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS
Transistor Type:
Bipolar
Technology:
Si
CW/Pulse:
CW
Frequency:
DC to 1.5 GHz
Package Type:
Through Hole
Gain:
11.7 to 13.5 dB
Supply Voltage:
25 V
Package:
TO-39
more info
QPD2018D Image
Description:Discrete GaAs pHEMT Transistor Die from DC to 20 GHz
Application Industry:
Aerospace & Defence, Test & Measurement, Commercia...
Transistor Type:
pHEMT
Technology:
GaAs
Frequency:
DC to 20 GHz
Power:
22 dBm (Psat)
Package Type:
Surface Mount
Power(W):
0.15 W (Psat)
Gain:
14 dB
Supply Voltage:
8 V
Package:
Die
more info
Description:Si Based Bipolar Transistor
Application Industry:
Aerospace & Defence, ISM, Avionics
Transistor Type:
Bipolar
Technology:
Si
CW/Pulse:
Pulse
Frequency:
1.025 to 1.15 GHz
Power:
55.44 dBm
Package Type:
Flanged
Power(W):
349.95 W
Gain:
9 dB
Supply Voltage:
50 V
Package:
Flange Ceramic
more info
Description:53.98 dBm (250 W), LDMOS Transistor from 1200 to 1400 MHz
Application Industry:
Radar, Wireless Infrastructure
Transistor Type:
LDMOS
Technology:
Si
CW/Pulse:
Pulse
Frequency:
1.2 to 1.4 GHz
Power:
53.97 dBm
Package Type:
Surface Mount
Power(W):
249.46 W
Supply Voltage:
36 V
Package:
SOT502A
more info
Description:HIGH EFFICIENCY HETEROJUNCTION POWER FET CHIP (.25µm x 600µm)
Application Industry:
Test & Measurement, Aerospace & Defence, Commercia...
Transistor Type:
pHEMT
Technology:
GaAs
CW/Pulse:
CW
Frequency:
DC to 26.5 GHz
Power:
27.5 dBm
Package Type:
Chip
Power(W):
0.56 W
Gain:
7.5 to 12 dB
Supply Voltage:
8 V
more info

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