RF Transistors - Page 51

2357 RF Transistors from 26 Manufacturers meet your specification.
Description:GaN Power Transistor
Application Industry:
Wireless Infrastructure, Wireless Communication
Transistor Type:
HEMT
Technology:
GaN on SiC, GaN
CW/Pulse:
CW
Frequency:
1.805 to 1.88 GHz
Power:
55.18 dBm
Package Type:
Flanged
Power(W):
329.61 W
Gain:
15.8 dB
Supply Voltage:
48 V
Package:
NS-AS01
more info
RF3L05150CB4 Image
Description:150 W, LDMOS RF Transistor operating at 1000 MHz
Application Industry:
Avionics, Commercial, Wireless Infrastructure
Transistor Type:
LDMOS
Technology:
Si
CW/Pulse:
Pulse
Frequency:
1000 MHz
Power:
51.76 dBm
Package Type:
Flanged
Power(W):
150 W
Supply Voltage:
28 V / 32 V
more info
WG60005SD Image
Description:5 W, GaN on SiC Power Transistor from DC to 6 GHz
Application Industry:
Aerospace & Defence, Broadcast, Wireless Infrastru...
Transistor Type:
HEMT
Technology:
GaN on SiC, GaN
CW/Pulse:
CW
Frequency:
DC to 6 GHz
Power:
36.98 dBm
Package Type:
Surface Mount
Power(W):
4.99 W
Supply Voltage:
50 V
more info
Description:HiFET High Voltage GaAs FET
Application Industry:
Wireless Infrastructure, Avionics
Transistor Type:
FET
Technology:
GaAs
CW/Pulse:
CW
Frequency:
DC to 3 GHz
Power:
31 dBm
Package Type:
Flanged
Power(W):
1.26 W
Supply Voltage:
28 to 32 V
Package:
Ceramic
more info
Description:20 W, Si LDMOS Power Transistor
Application Industry:
Aerospace & Defence, Broadcast, Wireless Infrastru...
Transistor Type:
LDMOS
Technology:
Si
Frequency:
1 to 500 MHz
Power:
43 dBm
Package Type:
Flanged
Power(W):
20 W
more info
Description:8 Watts, 26.5 Volts, Class A UHF Television - Band IV & V
Application Industry:
Wireless Infrastructure, Aerospace & Defence, Broa...
Transistor Type:
Bipolar
Technology:
Si
CW/Pulse:
CW
Frequency:
470 to 860 MHz
Power:
39.03 dBm
Package Type:
2-Hole Flanged
Power(W):
8 W
Supply Voltage:
26.5 V
Package:
55JV-2
more info
Description:GaAs FET for Military & Space Applications Up to 26 GHz
Application Industry:
Commercial, Military, Space, Wireless Infrastructu...
Transistor Type:
FET
Technology:
GaAs
CW/Pulse:
CW
Frequency:
DC to 26 GHz
Power:
21 dBm
Package Type:
Chip
Power(W):
0.13 W
Gain:
11 dB
Supply Voltage:
6 to 7 V
more info
Description:8.7 W GaN RF Input-Matched Transistor from 30 MHz to 1.2 GHz
Application Industry:
Wireless Infrastructure, Radar, Test & Measurement...
Transistor Type:
HEMT
Technology:
GaN on SiC, GaN
CW/Pulse:
Pulse, CW
Frequency:
30 MHz to 1.2 GHz
Power:
38.45 dBm
Package Type:
Surface Mount
Power(W):
7 W
Gain:
21 dB
Supply Voltage:
32 to 55 V
Package:
6 x 5 mm
more info
Description:2.7 to 3.1 GHz, GaN on Si HEMT for Aerospace & Defence Application
Application Industry:
Aerospace & Defence
Transistor Type:
HEMT
Technology:
GaN on Si, GaN
CW/Pulse:
CW
Frequency:
2.7 to 3.1 GHz
Power:
52.55 dBm
Package Type:
Surface Mount
Power(W):
179.89 W
Gain:
15 dB
Supply Voltage:
50 V
Package:
AC-360B-2/AC-360S-2
more info
Description:30 W LDMOS Power Transistor 616 to 960 MHz for Base Stations
Application Industry:
Wireless Infrastructure, Wireless Communication
Transistor Type:
LDMOS
Technology:
Si
CW/Pulse:
CW
Frequency:
616 to 960 MHz
Power:
44.77 dbm
Package Type:
Flanged
Power(W):
30 W
Supply Voltage:
50 V
more info
Description:HIGH EFFICIENCY HETEROJUNCTION POWER FET CHIP (.25µm x 600µm)
Application Industry:
Test & Measurement, Aerospace & Defence, Commercia...
Transistor Type:
pHEMT
Technology:
GaAs
CW/Pulse:
CW
Frequency:
DC to 26.5 GHz
Power:
27.5 dBm
Package Type:
Chip
Power(W):
0.56 W
Gain:
7.5 to 12 dB
Supply Voltage:
8 V
more info

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