RF Transistors - Page 50

2357 RF Transistors from 26 Manufacturers meet your specification.
IE18385D Image
Description:GaN Power Transistor
Application Industry:
Wireless Infrastructure, Wireless Communication
Transistor Type:
HEMT
Technology:
GaN on SiC, GaN
CW/Pulse:
CW
Frequency:
1.805 to 1.88 GHz
Power:
55.85 dBm
Package Type:
Flanged
Power(W):
384.59 W
Gain:
15.1 dB
Supply Voltage:
48 V
Package:
RF24001DKR3
more info
Description:DC to 6 GHz, HEMT Transistor
Application Industry:
Wireless Infrastructure, Radar, Aerospace & Defenc...
Transistor Type:
HEMT
Technology:
GaN on SiC, GaN
CW/Pulse:
Pulse, CW
Frequency:
DC to 6 GHz
Power:
44.77 dBm
Package Type:
Flanged
Power(W):
29.99 W
Gain:
14 dB
Supply Voltage:
12 to 40 V
more info
Description:25 W GaN HEMT from DC to 6 GHz
Application Industry:
Wireless Infrastructure, Test & Measurement
Transistor Type:
HEMT
Technology:
GaN on SiC, GaN
Frequency:
DC to 6 GHz
Power:
40 to 44.77 dBm
Package Type:
Flanged
Power(W):
20 to 30 W
Supply Voltage:
28 V
more info
Description:36.99 dBm (5 W), LDMOS Transistor from 700 to 2700 MHz
Application Industry:
Wireless Infrastructure
Transistor Type:
LDMOS
Technology:
Si
CW/Pulse:
Pulse, CW
Frequency:
700 MHz to 2.7 GHz
Power:
36.98 dBm
Package Type:
Surface Mount
Power(W):
4.99 W
Supply Voltage:
28 V
Package:
SOT1179-2
more info
Description:HIGH EFFICIENCY HETEROJUNCTION POWER FET CHIP (.25µm x 1600µm)
Application Industry:
Test & Measurement, Aerospace & Defence, Commercia...
Transistor Type:
pHEMT
Technology:
GaAs
CW/Pulse:
CW
Frequency:
DC to 26.5 GHz
Power:
31.5 dBm
Package Type:
Chip
Power(W):
1.41 W
Gain:
6 to 10 dB
Supply Voltage:
8 V
more info
MRF8S9232N Image
Description:Single W-CDMA Lateral N-Channel RF Power MOSFET, 865-960 MHz, 63 W Avg., 28 V
Application Industry:
Wireless Infrastructure
Transistor Type:
LDMOS
Technology:
Si
CW/Pulse:
Pulse, CW
Frequency:
865 to 960 MHz
Power:
47.99 dBm
Package Type:
Flanged
Power(W):
62.95 W
Supply Voltage:
28 V
Package:
CASE 2021--03, STYLE 1 OM--780--2 PLASTIC
more info
Description:13.75 to 14.5 GHz, HEMT Transistor
Application Industry:
SATCOM
Transistor Type:
HEMT
Technology:
GaN on SiC, GaN
CW/Pulse:
CW
Frequency:
13.75 to 14.5 GHz
Power:
49.03 dBm
Package Type:
Flanged
Power(W):
79.98 W
Supply Voltage:
24 V
more info
Description:28 W GaN Transistor from DC to 6 GHz for Open RAN Applications
Application Industry:
Cellular, Wireless Infrastructure, Broadcast, Base...
Transistor Type:
HEMT
Technology:
GaN on SiC
CW/Pulse:
CW
Frequency:
DC to 6 GHz
Power:
37.99 dBm
Package Type:
Surface Mount, Flanged
Power(W):
6.3 W
Supply Voltage:
48 V
more info
Description:1030 to 1090 MHz, 12.2 dB Bipolar Transistor
Application Industry:
Aerospace & Defence, Avionics
Transistor Type:
Bipolar
Technology:
Si
CW/Pulse:
Pulse
Frequency:
1.03 to 1.09 GHz
Power:
52.79 dBm
Package Type:
Flanged
Power(W):
190.11 W
Gain:
12.2 dB
Supply Voltage:
60 V
Package:
Ceramic
more info
Description:GaAs FET from 3.4 to 3.9 GHz
Application Industry:
Communication, Wireless Infrastructure
Transistor Type:
FET
Technology:
GaAs
Frequency:
3.4 to 3.9 GHz
Power:
42 to 43 dBm
Package Type:
Flanged
Power(W):
15.85 to 19.95 W
Package:
IK
more info
Description:200 W, GaN HEMT Transistor from DC to 8 GHz
Application Industry:
Radar, Wireless Infrastructure
Transistor Type:
HEMT
Technology:
GaN on SiC, GaN
CW/Pulse:
CW
Frequency:
DC to 8 GHz
Power:
53.01 dBm
Package Type:
Die
Power(W):
199.99 W
Supply Voltage:
48 V
more info

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