RF Transistors - Page 50

2360 RF Transistors from 26 Manufacturers meet your specification.
Description:GaN Power Transistor
Application Industry:
Wireless Infrastructure, Wireless Communication
Transistor Type:
HEMT
Technology:
GaN on SiC, GaN
CW/Pulse:
CW
Frequency:
DC to 6 GHz
Power:
44.47 dBm
Package Type:
Flanged
Power(W):
27.99 W
Gain:
17.6 dB
Supply Voltage:
48 V
Package:
NS-CS01
more info
Description:1.8 to 2.2 GHz, HEMT Transistor
Application Industry:
Wireless Infrastructure
Transistor Type:
HEMT
Technology:
GaN on SiC, GaN
CW/Pulse:
Pulse, CW
Frequency:
1.8 to 2.2 GHz
Power:
56.02 dBm
Package Type:
Flanged
Power(W):
399.94 W
Gain:
19.1 dB
Supply Voltage:
48 V
Package:
Ceramic
more info
Description:900 MHz to 1.4 GHz, GaN on Si HEMT for Aerospace & Defence Application
Application Industry:
Aerospace & Defence
Transistor Type:
HEMT
Technology:
GaN on Si, GaN
CW/Pulse:
CW
Frequency:
900 MHz to 1.4 GHz
Power:
60.41 dBm
Package Type:
Surface Mount
Power(W):
1099.01 W
Gain:
16 dB
Supply Voltage:
50 V
Package:
AC-1230B-4/AC-1230S-4
more info
Description:LDMOS Doherty MMIC from 3.4 to 3.8 GHz
Application Industry:
Wireless Infrastructure
Transistor Type:
LDMOS
Technology:
Si
CW/Pulse:
CW, Pulse
Frequency:
3400 to 3800 MHz
Power:
39 dBm
Package Type:
Flanged
Power(W):
7.9433 W
Gain:
31.1 to 36.1 dB
Supply Voltage:
28 V
more info
Description:HIGH EFFICIENCY HETEROJUNCTION POWER FET CHIP (.3 µm x 200 µm)
Application Industry:
Test & Measurement, Aerospace & Defence, Commercia...
Transistor Type:
MESFET
Technology:
GaAs
CW/Pulse:
CW
Frequency:
DC to 26.5 GHz
Power:
20.2 dBm
Package Type:
Chip
Power(W):
0.1 W
Gain:
9.2 to 13.5 dB
Supply Voltage:
6 to 8 V
more info
AFV121KHS Image
Description:Airfast RF Power LDMOS Transistor, 1000 W Peak, 960-1215 MHz, 50 V
Application Industry:
Aerospace & Defence, Radar, Wireless Infrastructur...
Transistor Type:
LDMOS
Technology:
Si
CW/Pulse:
Pulse
Frequency:
960 MHz to 1.215 GHz
Power:
60 dBm
Package Type:
Flanged
Power(W):
1000 W
Supply Voltage:
50 V
Package:
NI--1230S--4S
more info
Description:DC to 20 GHz, HEMT Transistor
Application Industry:
Wireless Infrastructure, Aerospace & Defence, Broa...
Transistor Type:
HEMT
Technology:
InGaAs
CW/Pulse:
CW
Frequency:
DC to 20 GHz
Package Type:
Flanged
Gain:
9.5 to 11.5 dB
Supply Voltage:
2 V
more info
Description:440 W, GaN on SiC OptiGaN HEMT from 758 to 821 MHz for 4G LTE & Open RAN Applications
Application Industry:
Cellular, Wireless Infrastructure, Broadcast, Base...
Transistor Type:
HEMT
Technology:
GaN on SiC
CW/Pulse:
CW
Frequency:
758 to 821 MHz
Power:
48.98 dBm
Package Type:
Surface Mount, Flanged
Power(W):
79 W
Gain:
17.5 dB
Supply Voltage:
48 V
more info
Description:1030 MHz, 9.3 dB Bipolar Transistor
Application Industry:
Aerospace & Defence, Avionics
Transistor Type:
Bipolar
Technology:
Si
CW/Pulse:
Pulse
Frequency:
1.03 to 1.09 GHz
Power:
53.71 dBm
Package Type:
Flanged
Power(W):
234.96 W
Gain:
9.3 dB
Supply Voltage:
48 V
Package:
Ceramic
more info
Description:GaAs FET from 8 GHz
Transistor Type:
FET
Technology:
GaAs
Frequency:
8 GHz
Power:
20.5 to 21.5 dBm
Package Type:
Chip
Power(W):
0.11 to 0.14 W
more info
Description:165 W, GaN HEMT Transistor from DC to 3.5 GHz
Application Industry:
Wireless Infrastructure, Test & Measurement, Radar
Transistor Type:
HEMT
Technology:
GaN on SiC, GaN
CW/Pulse:
CW, Pulse
Frequency:
DC to 3.5 GHz
Power:
52.17 dBm
Package Type:
Flanged
Power(W):
164.82 W
Supply Voltage:
48 V
more info

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