RF Transistors - Page 52

2357 RF Transistors from 26 Manufacturers meet your specification.
Description:100 W GaN-on-SiC Transistor from 2400 to 2500 MHz
Application Industry:
Test & Measurement, ISM
Technology:
GaN on SiC
CW/Pulse:
CW, Pulse
Frequency:
2.4 to 2.5 GHz
Power:
50.4 to 51 dBm
Package Type:
Flanged
Power(W):
110 to 127 W
Supply Voltage:
52 V
Package:
NS-AS01
more info
A2T07D160W04S Image
Description:Airfast RF Power LDMOS Transistor, 710-960 MHz, 160 W Avg., 28 V
Application Industry:
Wireless Infrastructure
Transistor Type:
LDMOS
Technology:
Si
CW/Pulse:
Pulse, CW
Frequency:
716 to 960 MHz
Power:
44.77 dBm
Package Type:
Flanged
Power(W):
29.99 W
Supply Voltage:
28 V
Package:
NI--780S--4L
more info
Description:DC to 2.4 GHz, HEMT Transistor
Application Industry:
Wireless Infrastructure, Aerospace & Defence, Broa...
Transistor Type:
HEMT
Technology:
InGaAs
CW/Pulse:
CW
Frequency:
DC to 2.4 GHz
Power:
16.5 dBm
Package Type:
Flanged
Power(W):
0.04 W
Gain:
15 dB
Supply Voltage:
3 V
more info
Description:385 W, GaN on SiC OptiGaN HEMT from 1805 to 1880 MHz for 4G LTE & Open RAN Applications
Application Industry:
Cellular, Wireless Infrastructure, Broadcast, Base...
Transistor Type:
HEMT
Technology:
GaN on SiC
CW/Pulse:
CW
Frequency:
1805 to 1880 MHz
Power:
47.99 dBm
Package Type:
Surface Mount, Flanged
Power(W):
63 W
Gain:
15.1 dB
Supply Voltage:
48 V
more info
Description:1200 to 1400 MHz, 19 dB GaN Transistor
Application Industry:
Radar
Transistor Type:
HEMT
Technology:
GaN on SiC, GaN
CW/Pulse:
Pulse
Frequency:
1.2 to 1.4 GHz
Power:
47.78 to 50 dBm
Package Type:
Flanged
Power(W):
100 W
Gain:
19 dB
Supply Voltage:
50 V
Package:
Ceramic
more info
Description:GaN on SiC, GaN HEMT from 3.3 to 3.7 GHz
Application Industry:
Cellular, Wireless Infrastructure, Wireless Commun...
Transistor Type:
HEMT
Technology:
GaN on SiC, GaN
Frequency:
3.3 to 3.7 GHz
Power:
42.5 dBm
Package Type:
Surface Mount
Power(W):
17.78 W
Supply Voltage:
50 V
more info
Description:25 W, GaN HEMT Transistor from DC to 15 GHz
Application Industry:
Radar, Wireless Infrastructure
Transistor Type:
HEMT
Technology:
GaN on SiC, GaN
CW/Pulse:
CW
Frequency:
DC to 15 GHz
Power:
43.98 dBm
Package Type:
Die
Power(W):
25 W
Supply Voltage:
28 V
more info
PD54008L-E Image
Description:8 W, LDMOS RF Transistor from 480 to 520 MHz
Application Industry:
Broadcast, Commercial, Wireless Infrastructure
Transistor Type:
LDMOS
Technology:
Si
CW/Pulse:
CW
Frequency:
480 to 520 MHz
Power:
39.03 dBm
Package Type:
Surface Mount
Power(W):
8 W
Supply Voltage:
7.5 V
more info
WG031035150I Image
Description:150W GaN power transistor for Radar System at frequencies from 3100 MHz to 3500 MHz
Application Industry:
Aerospace & Defence, Radar, Wireless Infrastructur...
Transistor Type:
FET
Technology:
GaN on SiC, GaN
CW/Pulse:
CW
Frequency:
3.1 to 3.5 GHz
Power:
51.76 dBm
Package Type:
Flanged
Power(W):
149.97 W
Supply Voltage:
48 V
more info
Description:Ceramic Package GaN AM060WX-BI-R Power HEMT DC-15GHz
Application Industry:
Wireless Infrastructure, Radar, Broadcast
Transistor Type:
HEMT
Technology:
GaN on SiC, GaN
CW/Pulse:
CW
Frequency:
DC to 15 GHz
Power:
42.9 to 43.3 dBm (P5dB)
Package Type:
Die
Power(W):
19.5 W
Supply Voltage:
28 V
more info
Description:125 W, Si LDMOS Power Transistor
Application Industry:
Broadcast, Wireless Communication
Transistor Type:
LDMOS
Technology:
Si
Frequency:
1 to 1100 MHz
Power:
50 dBm
Package Type:
Flanged
Power(W):
125 W
more info

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