RF Transistors - Page 52

2360 RF Transistors from 26 Manufacturers meet your specification.
Description:GaN Power Transistor
Application Industry:
Wireless Infrastructure, Wireless Communication, A...
Transistor Type:
HEMT
Technology:
GaN on SiC, GaN
CW/Pulse:
Pulse
Frequency:
3.48 to 3.52 GHz
Power:
53.4 dBm
Package Type:
Flanged
Power(W):
218.78 W
Gain:
14.7 dB
Supply Voltage:
48 V
Package:
RF12002KR3
more info
MRFX1K80N Image
Description:1800 W CW, LDMOS Transistor from 1.8 to 400 MHz
Application Industry:
ISM, Aerospace & Defence, Radar, Wireless Infrastr...
Transistor Type:
LDMOS
Technology:
Si
CW/Pulse:
CW, Pulse
Frequency:
1.8 to 400 MHz
Power:
62.55 dBm
Package Type:
Flanged
Power(W):
1800 W
Supply Voltage:
65 V
Package:
OM--1230--4L
more info
Description:DC to 520 MHz, MOSFET Transistor
Application Industry:
Wireless Infrastructure, Broadcast
Transistor Type:
MOSFET
Technology:
Si
CW/Pulse:
CW
Frequency:
DC to 520 MHz
Power:
29.3 to 31.13 dBm
Package Type:
Flanged
Power(W):
0.85 W
Gain:
14 dB
Supply Voltage:
7.2 V
more info
Description:468 W, GaN on SiC OptiGaN HEMT from 2110 to 2170 MHz for 4G LTE & Open RAN Applications
Application Industry:
Cellular, Wireless Infrastructure, Broadcast, Base...
Transistor Type:
HEMT
Technology:
GaN on SiC
CW/Pulse:
CW
Frequency:
2110 to 2170 MHz
Power:
48.98 dBm
Package Type:
Surface Mount, Flanged
Power(W):
79 W
Gain:
14.7 dB
Supply Voltage:
48 V
more info
Description:870 to 990 MHz, 7.6 dB Bipolar Transistor
Application Industry:
Radar
Transistor Type:
Bipolar
Technology:
Si
CW/Pulse:
Pulse
Frequency:
870 to 990 MHz
Power:
40.79 dBm
Package Type:
Flanged
Power(W):
11.99 W
Gain:
7.6 dB
Supply Voltage:
36 V
Package:
Ceramic
more info
Description:GaN on SiC, GaN HEMT from 900 MHz
Application Industry:
Wireless Infrastructure
Transistor Type:
HEMT
Technology:
GaN on SiC, GaN
Frequency:
900 MHz
Power:
50 dBm
Package Type:
Flanged
Power(W):
100 W
Supply Voltage:
50 V
more info
Description:10 W, GaN HEMT Transistor from DC to 10 GHz
Application Industry:
Radar, Wireless Infrastructure
Transistor Type:
HEMT
Technology:
GaN on SiC, GaN
CW/Pulse:
CW
Frequency:
DC to 10 GHz
Power:
40 dBm
Package Type:
Die
Power(W):
10 W
Supply Voltage:
48 V
more info
PD55003-E Image
Description:3 W, LDMOS / MOSFET RF Transistor from 520 to 860 MHz
Application Industry:
Broadcast, Commercial, Wireless Infrastructure
Transistor Type:
LDMOS
Technology:
Si
CW/Pulse:
CW
Frequency:
520 to 860 MHz
Power:
34.77 dBm
Package Type:
Surface Mount
Power(W):
3 W
Supply Voltage:
12.5 to 15.5 V
more info
WG21200SP Image
Description:200 W, GaN on SiC Power Transistor from 2.11 to 2.17 GHz
Application Industry:
Wireless Infrastructure
Transistor Type:
HEMT
Technology:
GaN on SiC, GaN
CW/Pulse:
CW
Frequency:
2.11 to 2.17 GHz
Power:
53.01 dBm
Package Type:
Flanged
Power(W):
199.99 W
Supply Voltage:
50 V
more info
Description:Ceramic Package GaAs Power pHEMT DC-8GHz
Application Industry:
Wireless Infrastructure, Radar, Broadcast
Transistor Type:
pHEMT
Technology:
GaAs
CW/Pulse:
CW
Frequency:
DC to 6 GHz
Power:
38 dBm
Package Type:
Flanged
Power(W):
6.31 W
Supply Voltage:
28 V
Package:
Ceramic
more info
Description:60 W, Si VDMOS Power Transistor
Application Industry:
Aerospace & Defence, Broadcast, Wireless Infrastru...
Transistor Type:
VDMOS
Technology:
Si
Frequency:
1 to 175 MHz
Power:
47 dBm
Package Type:
Flanged
Power(W):
60 W
more info

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