RF Transistors - Page 53

2357 RF Transistors from 26 Manufacturers meet your specification.
Description:347 W GaN Power Transistor from 2.3 to 2.5 GHz
Application Industry:
ISM
Transistor Type:
HEMT
Technology:
GaN on SiC
CW/Pulse:
Pulse
Frequency:
2300 to 2500 MHz
Power:
55.21 to 55.35 dBm
Package Type:
Flanged
Power(W):
332 to 343 W
Gain:
13.5 to 13.6 dB
Supply Voltage:
48 V
more info
Description:280 Watts - 50 Volts, 3ms, 30% Broad Band 1200 - 1400 MHz
Application Industry:
Radar
Transistor Type:
HEMT
Technology:
GaN on SiC, GaN
CW/Pulse:
Pulse
Frequency:
1.2 to 1.4 GHz
Power:
54.47 dBm
Package Type:
Die
Power(W):
279.9 W
Supply Voltage:
50 V
Package:
55-KR
more info
Description:Space Qualified GaAs FETs at 12 GHz
Application Industry:
Military, Space, Test & Measurement, Wireless Infr...
Transistor Type:
FET
Technology:
GaAs
CW/Pulse:
CW
Frequency:
12 GHz
Power:
27 dBm
Package Type:
Chip
Power(W):
0.5 W
more info
Description:30 to 1200 MHz, 25 Watt, GaN RF Input-Matched Transistor
Application Industry:
Wireless Infrastructure, Radar, Test & Measurement...
Transistor Type:
HEMT
Technology:
GaN on SiC, GaN
CW/Pulse:
Pulse
Frequency:
30 MHz to 1.2 GHz
Power:
43.98 dBm
Package Type:
Surface Mount
Power(W):
25 W
Gain:
20.8 dB
Supply Voltage:
50 to 55 V
Package:
6 x 5 mm
more info
Description:Si Based TMOS Transistor
Application Industry:
Aerospace & Defence, Radar, ISM, Commercial, Avion...
Transistor Type:
MOSFET
Technology:
Si
CW/Pulse:
CW
Frequency:
5 to 500 MHz
Power:
51.76 to 53.01 dBm
Package Type:
Flanged
Power(W):
199.99 W
Gain:
10 dB
Supply Voltage:
28 V
Package:
Flange Ceramic
more info
Description:LDMOS 2-Stage Integrated Doherty MMIC Transistor from 2.496 to 2.7 GHz
Application Industry:
Wireless Infrastructure
Transistor Type:
LDMOS
Technology:
Si
CW/Pulse:
CW, Pulse
Frequency:
2.496 to 2.7 GHz
Power:
39 to 40 dbm (P3dB)
Package Type:
Surface Mount
Power(W):
7.94 to 10 W
Supply Voltage:
28 V
more info
Description:HIGH EFFICIENCY HETEROJUNCTION POWER FET CHIP (.25µm x 2400µm)
Application Industry:
Test & Measurement, Aerospace & Defence, Commercia...
Transistor Type:
pHEMT
Technology:
GaAs
CW/Pulse:
CW
Frequency:
DC to 26.5 GHz
Power:
33 dBm
Package Type:
Chip
Power(W):
2 W
Gain:
5.5 to 9 dB
Supply Voltage:
8 V
more info
MRF8S9100HS Image
Description:GSM, GSM EDGE Lateral N-Channel RF Power MOSFET, 920-960 MHz, 72 W CW, 28 V
Application Industry:
Wireless Infrastructure
Transistor Type:
LDMOS
Technology:
Si
CW/Pulse:
Pulse, CW
Frequency:
920 to 960 MHz
Power:
48.57 dBm
Package Type:
Flanged
Power(W):
71.94 W
Supply Voltage:
28 V
Package:
CASE 465--06, STYLE 1 NI--780
more info
Description:175 to 520 MHz, MOSFET Transistor
Application Industry:
Wireless Infrastructure, Broadcast
Transistor Type:
MOSFET
Technology:
Si
CW/Pulse:
CW
Frequency:
175 to 520 MHz
Power:
38.45 to 39.03 dBm
Package Type:
Flanged
Power(W):
8 W
Gain:
10 dB
Supply Voltage:
7.2 V
more info
Description:Cost-Effective GaN on SiC Transistor from 1800 to 2200 MHz for Wireless Infra Applications
Application Industry:
Cellular, Wireless Infrastructure, Broadcast, Base...
Transistor Type:
HEMT
Technology:
GaN on SiC
CW/Pulse:
CW
Frequency:
1800 to 2200 MHz
Power:
48.98 dBm
Package Type:
Surface Mount, Flanged
Power(W):
79 W
Gain:
14.7 dB
Supply Voltage:
48 V
more info
Description:2700 to 3100 MHz, 12.5 dB LDMOS Transistor
Application Industry:
Radar
Transistor Type:
LDMOS
Technology:
Si
CW/Pulse:
Pulse
Frequency:
2.7 to 3.1 GHz
Power:
44.77 to 47.4 dBm
Package Type:
Flanged
Power(W):
54.95 W
Gain:
12.5 dB
Supply Voltage:
28 V
Package:
Ceramic
more info

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