RF Transistors - Page 56

2357 RF Transistors from 26 Manufacturers meet your specification.
ID38461DR Image
Description:56 W GaN-on-SiC HEMT from 3700 to 3980 MHz
Application Industry:
Wireless Infrastructure, Wireless Communication
Transistor Type:
HEMT
Technology:
GaN on SiC
Frequency:
3.7 to 3.98 GHz
Power:
47.5 dBm
Package Type:
Flanged
Power(W):
56.2 W
Gain:
14.5 dB
Supply Voltage:
48 V
more info
Description:12 W, GaN on SiC Transistor from 1000 to 12000 MHz
Application Industry:
Aerospace & Defence
Transistor Type:
HEMT
Technology:
GaN on SiC
CW/Pulse:
CW
Frequency:
1000 to 12000 MHz
Power:
40.79 dBm
Package Type:
Die
Power(W):
12 W
Supply Voltage:
28 V
more info
Description:High-Power GaAs MESFET for Military and Space Applications
Application Industry:
Commercial, Military, Space, Wireless Infrastructu...
Transistor Type:
MESFET
Technology:
GaAs
CW/Pulse:
CW
Frequency:
DC to 8 GHz
Power:
32 dBm
Package Type:
Chip
Power(W):
1.58 W
Supply Voltage:
6 to 7 V
more info
Description:DC to 3.3 GHz, 200 W Transistor
Application Industry:
Wireless Infrastructure, Radar, Aerospace & Defenc...
Transistor Type:
HEMT
Technology:
GaN on SiC, GaN
CW/Pulse:
Pulse, CW
Frequency:
DC to 3.5 GHz
Power:
46.81 dBm
Package Type:
Flanged
Power(W):
47.97 W
Gain:
16 dB
Supply Voltage:
36 V
more info
Description:70-W, 4500 to 5900-MHz, internally matched GaN HEMT for C-Band Radar Systems
Application Industry:
Radar
Transistor Type:
HEMT
Technology:
GaN on SiC, GaN
CW/Pulse:
Pulse
Frequency:
4.5 to 5.9 GHz
Power:
48.81 to 50 dBm
Package Type:
Flanged
Power(W):
100 W
Supply Voltage:
50 V
more info
Description:600 W LDMOS Power Transistor from 1.2 to 1.4 GHz
Application Industry:
Radar, Wireless Infrastructure
Transistor Type:
LDMOS
Technology:
Si
Frequency:
1.2 GHz to 1.4 GHz
Power:
57.78 dBm
Package Type:
Flanged
Power(W):
600 W
Gain:
19 dB
Supply Voltage:
32 V
more info
A2I25H060N Image
Description:Airfast RF Power LDMOS Transistor 1880-2025 MHz, 58 W Avg., 28 V
Application Industry:
Wireless Infrastructure
Transistor Type:
LDMOS
Technology:
Si
CW/Pulse:
Pulse, CW
Frequency:
2.3 to 2.69 GHz
Power:
40.21 dBm
Package Type:
Flanged
Power(W):
10.5 W
Supply Voltage:
28 V
Package:
TO--270WB--17 PLASTIC
more info
Description:175 to 870 MHz, MOSFET Transistor
Application Industry:
Wireless Infrastructure, Broadcast
Transistor Type:
MOSFET
Technology:
Si
CW/Pulse:
CW
Frequency:
175 to 870 MHz
Power:
38.45 to 39.03 dBm
Package Type:
Flanged
Power(W):
8 W
Gain:
11.5 to 13.8 dB
Supply Voltage:
7.2 V
more info
Description:398 W, GaN on SiC OptiGaN HEMT from 2620 to 2690 MHz for 4G LTE & Open RAN Applications
Application Industry:
Cellular, Wireless Infrastructure, Broadcast, Base...
Transistor Type:
HEMT
Technology:
GaN on SiC
CW/Pulse:
CW
Frequency:
2620 to 2690 MHz
Power:
48.98 dBm
Package Type:
Surface Mount, Flanged
Power(W):
79 W
Gain:
11.9 dB
Supply Voltage:
48 V
more info
Description:2200 to 2260 MHz, 8.7 dB Bipolar Transistor
Application Industry:
Radar
Transistor Type:
Bipolar
Technology:
Si
CW/Pulse:
Pulse
Frequency:
2.25 to 2.55 GHz
Power:
50.41 to 51.76 dBm
Package Type:
Flanged
Power(W):
149.97 W
Gain:
8.7 dB
Supply Voltage:
36 V
Package:
Ceramic
more info
Description:GaAs HEMT from 4 GHz
Transistor Type:
HEMT
Technology:
GaAs
Frequency:
4 GHz
Package Type:
Flanged
Gain:
14.5 dB
Supply Voltage:
2 V
Package:
LG
more info

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