RF Transistors - Page 56

2360 RF Transistors from 26 Manufacturers meet your specification.
Description:275 W Asymmetrical Doherty GaN HEMT from 1805 to 1880 MHz
Application Industry:
Wireless Infrastructure, Wireless Communication
Transistor Type:
HEMT
Technology:
GaN on SiC
CW/Pulse:
Pulse
Frequency:
1805 to 1880 MHz
Power:
53.01 to 55.2 dBm (Psat)
Package Type:
Flanged
Power(W):
200 to 331 W (Psat)
Gain:
13.4 to 13.8 dB
Supply Voltage:
48 to 52 V
more info
Description:AlGaAs/InGaAs pHEMT for Military & Space Applications Up to 28 GHz
Application Industry:
Commercial, Military, Space, Wireless Infrastructu...
Transistor Type:
pHEMT
Technology:
AlGaAs/InGaAs
CW/Pulse:
CW
Frequency:
DC to 28 GHz
Power:
23 dBm
Package Type:
Chip
Power(W):
0.2 W
Supply Voltage:
2.5 to 8 V
more info
Description:60 Watts - 40 Volts, 150µs, 5% Radar 890 - 1000 MHz
Application Industry:
Radar
Transistor Type:
Bipolar
Technology:
Si
CW/Pulse:
Pulse
Frequency:
890 MHz to 1 GHz
Power:
47.78 to 49.24 dBm
Package Type:
Flanged
Power(W):
83.95 W
Supply Voltage:
40 V
Package:
55AW-1
more info
Description:30 to 1200 MHz, 25 Watt, GaN RF Input-Matched Transistor
Application Industry:
Wireless Infrastructure, Radar, Test & Measurement...
Transistor Type:
HEMT
Technology:
GaN on SiC, GaN
CW/Pulse:
Pulse
Frequency:
30 MHz to 1.2 GHz
Power:
43.98 dBm
Package Type:
Surface Mount
Power(W):
25 W
Gain:
20.8 dB
Supply Voltage:
50 to 55 V
Package:
6 x 5 mm
more info
Description:Si Based DMOS Transistor
Application Industry:
Aerospace & Defence, Radar, ISM, Avionics
Transistor Type:
MOSFET
Technology:
Si
CW/Pulse:
CW
Frequency:
100 to 500 MHz
Power:
46.02 dBm
Package Type:
Flanged
Power(W):
39.99 W
Gain:
10 dB
Supply Voltage:
28 V
Package:
Flange Ceramic
more info
Description:LDMOS 2-Stage Integrated Doherty MMIC Transistor from 2.3 to 2.4 GHz
Application Industry:
Wireless Infrastructure
Transistor Type:
LDMOS
Technology:
Si
CW/Pulse:
CW, Pulse
Frequency:
2.3 to 2.4 GHz
Power:
39 to 40 dBm (P3dB)
Package Type:
Surface Mount
Power(W):
7.94 to 10 W
Supply Voltage:
28 V
more info
AFT05MP075GN Image
Description:Airfast Broadband RF Power LDMOS Transistor, 136-520 MHz, 70 W, 12.5 V
Application Industry:
Wireless Infrastructure, Broadcast
Transistor Type:
LDMOS
Technology:
Si
CW/Pulse:
CW
Frequency:
136 to 520 MHz
Power:
48.45 dBm
Package Type:
Flanged
Power(W):
69.98 W
Supply Voltage:
12.5 V
Package:
TO--270WBG--4
more info
Description:DC to 870 MHz, MOSFET Transistor
Application Industry:
Wireless Infrastructure, Broadcast
Transistor Type:
MOSFET
Technology:
Si
CW/Pulse:
CW
Frequency:
DC to 870 MHz
Power:
39.54 to 40 dBm
Package Type:
Flanged
Power(W):
10 W
Supply Voltage:
7.2 V
more info
Description:302 W, GaN on SiC OptiGaN HEMT from 3400 to 3800 MHz for 4G LTE & Open RAN Applications
Application Industry:
Cellular, Wireless Infrastructure, Broadcast, Base...
Transistor Type:
HEMT
Technology:
GaN on SiC
CW/Pulse:
CW
Frequency:
3400 to 3800 MHz
Power:
46.53 dBm
Package Type:
Surface Mount, Flanged
Power(W):
45 W
Gain:
11.4 dB
Supply Voltage:
48 V
more info
Description:1030 MHz, 10.2 dB Bipolar Transistor
Application Industry:
Aerospace & Defence, Avionics
Transistor Type:
Bipolar
Technology:
Si
CW/Pulse:
Pulse
Frequency:
1.03 to 1.09 GHz
Power:
56.72 to 58.22 dBm
Package Type:
Flanged
Power(W):
663.74 W
Gain:
10.2 dB
Supply Voltage:
48 V
Package:
Ceramic
more info
Description:GaAs FET from 7.1 to 7.9 GHz
Transistor Type:
FET
Technology:
GaAs
Frequency:
7.1 to 7.9 GHz
Power:
37.5 to 38.5 dBm
Package Type:
Flanged
Power(W):
5.62 to 7.08 W
Package:
IK
more info

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