RF Transistors - Page 54

2360 RF Transistors from 26 Manufacturers meet your specification.
IE21385D Image
Description:GaN Power Transistor
Application Industry:
Wireless Infrastructure, Wireless Communication
Transistor Type:
HEMT
Technology:
GaN on SiC, GaN
CW/Pulse:
CW
Frequency:
2.11 to 2.17 GHz
Power:
55.85 dBm
Package Type:
Flanged
Power(W):
384.59 W
Gain:
14.6 dB
Supply Voltage:
48 V
Package:
RF24001DKR3
more info
Description:GaAs FET from 7.1 to 7.9 GHz
Application Industry:
Communication, Wireless Infrastructure
Transistor Type:
FET
Technology:
GaAs
Frequency:
7.1 to 7.9 GHz
Power:
41.5 to 42.5 dBm
Package Type:
Flanged
Power(W):
14.13 to 17.78 W
Package:
IB
more info
Description:107 W, GaN HEMT Transistor from DC to 3.5 GHz
Application Industry:
Wireless Infrastructure, Test & Measurement, Radar
Transistor Type:
HEMT
Technology:
GaN on SiC, GaN
CW/Pulse:
CW, Pulse
Frequency:
DC to 3.5 GHz
Power:
50.29 dBm
Package Type:
Flanged
Power(W):
107 W
Supply Voltage:
48 V
more info
PD85015-E Image
Description:20 W, LDMOS / MOSFET RF Transistor from 500 MHz to 1 GHz
Application Industry:
Broadcast, Commercial, Wireless Infrastructure
Transistor Type:
LDMOS
Technology:
Si
CW/Pulse:
CW
Frequency:
500 MHz to 1 GHz
Power:
43.01 dBm
Package Type:
Surface Mount
Power(W):
15 to 20 W
Supply Voltage:
13.6 V
more info
WG60002SD Image
Description:2 W, GaN on SiC Power Transistor from DC to 6 GHz
Application Industry:
Aerospace & Defence, Broadcast, Wireless Infrastru...
Transistor Type:
HEMT
Technology:
GaN on SiC, GaN
CW/Pulse:
CW
Frequency:
DC to 6 GHz
Power:
33.01 dBm
Package Type:
Surface Mount
Power(W):
2 W
Supply Voltage:
28 V
more info
Description:HiFET High Voltage GaAs FET DC-12 GHz
Application Industry:
Wireless Infrastructure, Radar, Broadcast
Transistor Type:
FET
Technology:
GaAs
CW/Pulse:
CW
Frequency:
DC to 12 GHz
Power:
30 dBm
Package Type:
Flanged
Power(W):
1 W
Supply Voltage:
28 V
Package:
Ceramic
more info
Description:100 W, GaN on SiC HEMT Power Transistor
Application Industry:
Wireless Communication
Transistor Type:
HEMT
Technology:
GaN on SiC, GaN
Frequency:
1 MHz to 3 GHz
Power:
50 dBm
Package Type:
Flanged
Power(W):
100 W
more info
Description:AlGaAs/InGaAs pHEMT for Military & Space Applications Up to 26 GHz
Application Industry:
Commercial, Military, Space, Wireless Infrastructu...
Transistor Type:
pHEMT
Technology:
AlGaAs/InGaAs
CW/Pulse:
CW
Frequency:
DC to 26 GHz
Power:
26.5 dBm
Package Type:
Chip
Power(W):
0.45 W
Supply Voltage:
2.5 to 8 V
more info
Description:7.0 Watts - 20 Volts, Class C Microwave 2300 MHz
Transistor Type:
Bipolar
Technology:
Si
CW/Pulse:
CW
Frequency:
DC to 2.3 GHz
Power:
38.45 dBm
Package Type:
2-Hole Flanged
Power(W):
7 W
Supply Voltage:
20 V
Package:
55BT-1
more info
Description:2.5 to 2.7 GHz, HEMT Transistor
Application Industry:
Wireless Infrastructure
Transistor Type:
HEMT
Technology:
GaN on SiC, GaN
CW/Pulse:
Pulse
Frequency:
2.5 to 2.7 GHz
Power:
55.61 dBm
Package Type:
Flanged
Power(W):
363.92 W
Gain:
22 dB
Supply Voltage:
48 V
Package:
Ceramic
more info
Description:Si Based Bipolar Transistor
Application Industry:
Aerospace & Defence, ISM, Radar
Transistor Type:
Bipolar
Technology:
Si
CW/Pulse:
Pulse
Frequency:
3.1 to 3.4 GHz
Power:
43.98 dBm
Package Type:
Flanged
Power(W):
25 W
Gain:
7.5 dB
Supply Voltage:
36 V
Package:
Flange Ceramic
more info

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