RF Transistors - Page 55

2357 RF Transistors from 26 Manufacturers meet your specification.
IR08330P Image
Description:GaN Power Transistor
Application Industry:
Wireless Infrastructure, Wireless Communication
Transistor Type:
HEMT
Technology:
GaN on SiC, GaN
CW/Pulse:
CW
Frequency:
770 to 870 GHz
Power:
55.18 dBm
Package Type:
Flanged
Power(W):
329.61 W
Gain:
21 dB
Supply Voltage:
48 V
Package:
NS-AS01
more info
Description:40 dBm (10 W), LDMOS Transistor from 700 to 2700 MHz
Application Industry:
Wireless Infrastructure, Wireless Communication
Transistor Type:
LDMOS
Technology:
Si
CW/Pulse:
Pulse, CW
Frequency:
700 MHz to 2.7 GHz
Power:
40 dBm
Package Type:
Surface Mount
Power(W):
10 W
Supply Voltage:
28 V
Package:
SOT1371-1
more info
Description:DC to 470 MHz, MOSFET Transistor
Application Industry:
Wireless Infrastructure, Broadcast
Transistor Type:
MOSFET
Technology:
Si
CW/Pulse:
CW
Frequency:
DC to 470 MHz
Power:
33.62 dBm
Package Type:
Flanged
Power(W):
2.3 W
Gain:
10 dB
Supply Voltage:
3.6 V
more info
Description:195 W Surface-Mount GaN Power Transistor from 1880 to 2025 MHz
Application Industry:
Cellular, Wireless Infrastructure, Broadcast, Base...
Transistor Type:
HEMT
Technology:
GaN on SiC
CW/Pulse:
CW
Frequency:
1880 to 2025 MHz
Power:
45.05 dBm
Package Type:
Surface Mount, Flanged
Power(W):
32 W
Gain:
16.9 dB
Supply Voltage:
48 V
more info
Description:3.1 to 3.5 GHz, HEMT Transistor
Application Industry:
Radar
Transistor Type:
HEMT
Technology:
GaN on SiC, GaN
CW/Pulse:
Pulse
Frequency:
3.1 to 3.5 GHz
Power:
40.79 dBm
Package Type:
Flanged
Power(W):
11.99 W
Gain:
16 dB
Supply Voltage:
46 V
Package:
Ceramic
more info
Description:GaAs FET from 5.9 to 6.4 GHz
Application Industry:
Communication, Wireless Infrastructure
Transistor Type:
FET
Technology:
GaAs
Frequency:
5.9 to 6.4 GHz
Power:
42 to 43 dBm
Package Type:
Flanged
Power(W):
15.85 to 19.95 W
Package:
IA
more info
Description:60 W, GaN HEMT Transistor from DC to 10 GHz
Application Industry:
Radar, Wireless Infrastructure
Transistor Type:
HEMT
Technology:
GaN on SiC, GaN
CW/Pulse:
CW, Pulse
Frequency:
DC to 10 GHz
Power:
47.78 dBm
Package Type:
Flanged
Power(W):
59.98 W
Supply Voltage:
28 V
more info
RF2L27025CG2 Image
Description:25 W, LDMOS RF Transistor from 700 MHz to 2.7 GHz
Transistor Type:
LDMOS
Technology:
Si
CW/Pulse:
CW, Pulse
Frequency:
700 MHz to 2.7 GHz
Power:
43.97 dBm
Package Type:
Flanged
Power(W):
25 W
Supply Voltage:
28 V
more info
WG40120SF/P Image
Description:120 W, GaN on SiC Power Transistor from DC to 4 GHz
Application Industry:
Aerospace & Defence, Broadcast, Wireless Infrastru...
Transistor Type:
HEMT
Technology:
GaN on SiC, GaN
CW/Pulse:
CW
Frequency:
DC to 4 GHz
Power:
50.79 dBm
Package Type:
Flanged
Power(W):
119.95 W
Supply Voltage:
28 V
more info
Description:HiFET High Voltage GaAs FET
Application Industry:
Wireless Infrastructure, Avionics
Transistor Type:
FET
Technology:
GaAs
CW/Pulse:
CW
Frequency:
DC to 6 GHz
Power:
28 dBm
Package Type:
Flanged
Power(W):
0.63 W
Supply Voltage:
14 to 16 V
Package:
Ceramic
more info
Description:120 W, GaN on SiC HEMT Power Transistor
Application Industry:
Wireless Communication
Transistor Type:
HEMT
Technology:
GaN on SiC, GaN
Frequency:
1 MHz to 3 GHz
Power:
50 dBm
Package Type:
Flanged
Power(W):
120 W
more info

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