RF Transistors - Page 55

2360 RF Transistors from 26 Manufacturers meet your specification.
Description:GaN Power Transistor
Application Industry:
Wireless Infrastructure, Wireless Communication
Transistor Type:
HEMT
Technology:
GaN on SiC, GaN
CW/Pulse:
CW
Frequency:
1.805 to 1.88 GHz
Power:
55.18 dBm
Package Type:
Flanged
Power(W):
329.61 W
Gain:
15.8 dB
Supply Voltage:
48 V
Package:
NS-AS01
more info
Description:40 dBm (10 W), LDMOS Transistor from 700 to 2700 MHz
Application Industry:
Wireless Infrastructure, Wireless Communication
Transistor Type:
LDMOS
Technology:
Si
CW/Pulse:
Pulse, CW
Frequency:
700 MHz to 2.7 GHz
Power:
40.4 dBm
Package Type:
Surface Mount
Power(W):
10.96 W
Supply Voltage:
28 V
Package:
SOT1179-2
more info
Description:DC to 24.3 GHz, HEMT Transistor
Application Industry:
Wireless Infrastructure, Aerospace & Defence, Broa...
Transistor Type:
HEMT
Technology:
InGaAs
CW/Pulse:
CW
Frequency:
DC to 24.3 GHz
Power:
11.5 dBm
Package Type:
Flanged
Power(W):
0.01 W
Supply Voltage:
1.5 V
more info
Description:320 W, GaN on SiC OptiGaN HEMT from 1805 to 1880 MHz for 4G LTE & Open RAN Applications
Application Industry:
Cellular, Wireless Infrastructure, Broadcast, Base...
Transistor Type:
HEMT
Technology:
GaN on SiC
CW/Pulse:
CW
Frequency:
1805 to 1880 MHz
Power:
46.99 dBm
Package Type:
Surface Mount, Flanged
Power(W):
50 W
Gain:
13.9 dB
Supply Voltage:
48 V
more info
Description:3.8 to 4.2 GHz, HEMT Transistor
Application Industry:
Radar
Transistor Type:
HEMT
Technology:
GaN on SiC, GaN
CW/Pulse:
CW
Frequency:
3.8 to 4.2 GHz
Power:
51.14 to 52.55 dBm
Package Type:
Flanged
Power(W):
179.89 W
Gain:
13.8 dB
Supply Voltage:
50 V
Package:
Ceramic
more info
Description:GaN on SiC, GaN HEMT from 2.6 GHz
Application Industry:
Wireless Infrastructure
Transistor Type:
HEMT
Technology:
GaN on SiC, GaN
Frequency:
2.6 GHz
Power:
47.3 dBm
Package Type:
Flanged
Power(W):
53.7 W
Supply Voltage:
50 V
more info
Description:280 to 410 W, GaN HEMT Transistor from DC to 3.5 GHz
Application Industry:
Wireless Infrastructure, Test & Measurement, Radar
Transistor Type:
HEMT
Technology:
GaN on SiC, GaN
CW/Pulse:
CW, Pulse
Frequency:
DC to 3.5 GHz
Power:
56.13 dBm
Package Type:
Flanged
Power(W):
410.2 W
Supply Voltage:
48 V
more info
PD55008-E Image
Description:3 W, LDMOS / MOSFET RF Transistor from 480 to 900 MHz
Application Industry:
Broadcast, Commercial, Wireless Infrastructure
Transistor Type:
LDMOS
Technology:
Si
CW/Pulse:
CW
Frequency:
480 to 900 MHz
Power:
34.77 dBm
Package Type:
Surface Mount
Power(W):
3 W
Supply Voltage:
12.5 to 15.5 V
more info
WG40120SF/P Image
Description:120 W, GaN on SiC Power Transistor from DC to 4 GHz
Application Industry:
Aerospace & Defence, Broadcast, Wireless Infrastru...
Transistor Type:
HEMT
Technology:
GaN on SiC, GaN
CW/Pulse:
CW
Frequency:
DC to 4 GHz
Power:
50.79 dBm
Package Type:
Flanged
Power(W):
119.95 W
Supply Voltage:
28 V
more info
Description:Ceramic Package GaN AM060WX-BI-R Power HEMT DC-12GHz
Application Industry:
Wireless Infrastructure, Radar, Broadcast
Transistor Type:
HEMT
Technology:
GaN on SiC, GaN
CW/Pulse:
CW
Frequency:
DC to 12 GHz
Power:
32.5 to 33.5 dBm (P5dB)
Package Type:
Flanged
Power(W):
1.78 W
Supply Voltage:
28 V
Package:
Ceramic
more info
Description:5 W, Si LDMOS Power Transistor
Application Industry:
Aerospace & Defence, Broadcast, Wireless Infrastru...
Transistor Type:
LDMOS
Technology:
Si
Frequency:
1 to 500 MHz
Power:
36 dBm
Package Type:
Surface Mount
Power(W):
5 W
more info

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