RF Transistors - Page 6

2359 RF Transistors from 26 Manufacturers meet your specification.
Description:240 W, GaN on SiC OptiGaN HEMT from 2300 to 2400 MHz for 4G LTE & Open RAN Applications
Application Industry:
Cellular, Wireless Infrastructure, Broadcast, Base...
Transistor Type:
HEMT
Technology:
GaN on SiC
CW/Pulse:
CW
Frequency:
2300 to 2400 MHz
Power:
46.02 dBm
Package Type:
Surface Mount, Flanged
Power(W):
40 W
Gain:
15.3 dB
Supply Voltage:
48 V
more info
Description:HIGH EFFICIENCY HETEROJUNCTION POWER FET CHIP (.3 µm x 300 µm)
Application Industry:
Test & Measurement, Aerospace & Defence, Commercia...
Transistor Type:
MESFET
Technology:
GaAs
CW/Pulse:
CW
Frequency:
DC to 26.5 GHz
Power:
21.7 dBm
Package Type:
Chip
Power(W):
0.15 W
Gain:
8.9 to 13.5 dB
Supply Voltage:
6 to 8 V
more info
AFT09S200W02GN Image
Description:Airfast RF Power LDMOS Transistor, 716-960 MHz, 41 W Avg., 28 V
Application Industry:
Wireless Infrastructure
Transistor Type:
LDMOS
Technology:
Si
CW/Pulse:
Pulse, CW
Frequency:
716 to 960 MHz
Power:
47.48 dBm
Package Type:
Flanged
Power(W):
55.98 W
Supply Voltage:
28 V
Package:
OM--780G--2L PLASTIC
more info
Description:175 to 520 MHz, MOSFET Transistor
Application Industry:
Wireless Infrastructure, Broadcast
Transistor Type:
MOSFET
Technology:
Si
CW/Pulse:
CW
Frequency:
175 to 520 MHz
Power:
33.01 to 34.77 dBm
Package Type:
Flanged
Power(W):
3 W
Gain:
16 dB
Supply Voltage:
7.2 V
more info
Description:RF HBT for 5GHz Applications
Application Industry:
GNSS, SATCOM, Wireless Infrastructure, Wireless Co...
Transistor Type:
Bipolar
Technology:
Si
Frequency:
Up to 85 GHz
Power:
5 dBm
Package Type:
Surface Mount
Power(W):
0.003 W
Gain:
23 dB
Supply Voltage:
1.8 V
more info
Description:1.02 to 1.15 GHz, 640 W Transistor for Pulsed Avionics Applications
Application Industry:
Aerospace & Defence
Transistor Type:
MOSFET
Technology:
Si
CW/Pulse:
Pulse
Frequency:
1.02 to 1.15 GHz
Power:
58.06 dBm
Package Type:
Flanged
Power(W):
640 W
Gain:
17.3 dB
Supply Voltage:
50 V
more info
Description:15.8 W GaN Transistor from 3.4 to 3.8 GHz for Open RAN Applications
Application Industry:
Cellular, Wireless Infrastructure, Broadcast, Base...
Transistor Type:
HEMT
Technology:
GaN on SiC
CW/Pulse:
CW
Frequency:
3400 to 3800 MHz
Power:
29.03 dBm
Package Type:
Surface Mount, Flanged
Power(W):
0.8 W
Gain:
18.2 dB
Supply Voltage:
48 V
more info
Description:960 to 1215 MHz, 8.8 dB LDMOS Transistor
Application Industry:
Aerospace & Defence, Avionics
Transistor Type:
LDMOS
Technology:
Si
CW/Pulse:
Pulse
Frequency:
960 MHz to 1.215 GHz
Power:
51.76 to 53.26 dBm
Package Type:
Flanged
Power(W):
211.84 W
Gain:
13 dB
Supply Voltage:
50 V
Package:
Ceramic
more info
Description:100 W GaN HEMT Transistor from 5.3 to 5.8 GHz
Application Industry:
Broadcast, Military, Radar, SATCOM, Test & Measure...
Transistor Type:
HEMT
Technology:
GaN on SiC, GaN
CW/Pulse:
Pulse
Frequency:
5.3 to 5.8 GHz
Power:
50.3 dBm (Psat)
Package Type:
4-Hole Flanged
Power(W):
107.15 W (Psat)
Supply Voltage:
48 V
more info
PD57045-E Image
Description:45 W, LDMOS / MOSFET RF Transistor from 925 to 960 MHz
Application Industry:
Wireless Infrastructure, Commercial
Transistor Type:
LDMOS
Technology:
Si
CW/Pulse:
CW
Frequency:
925 to 960 MHz
Power:
46.53 dBm
Package Type:
Surface Mount
Power(W):
45 W
Supply Voltage:
28 V
more info
WGB02504060F Image
Description:60 W, GaN on SiC Power Transistor from 2.5 to 4 GHz
Application Industry:
Aerospace & Defence, Wireless Infrastructure
Transistor Type:
HEMT
Technology:
GaN on SiC, GaN
CW/Pulse:
CW
Frequency:
2.5 to 4 GHz
Power:
47.78 dBm
Package Type:
Flanged
Power(W):
59.98 W
Supply Voltage:
50 V
more info

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