RF Transistors - Page 9

2359 RF Transistors from 26 Manufacturers meet your specification.
Description:195 W Surface-Mount GaN Power Transistor from 1880 to 2025 MHz
Application Industry:
Cellular, Wireless Infrastructure, Broadcast, Base...
Transistor Type:
HEMT
Technology:
GaN on SiC
CW/Pulse:
CW
Frequency:
1880 to 2025 MHz
Power:
45.05 dBm
Package Type:
Surface Mount, Flanged
Power(W):
32 W
Gain:
16.9 dB
Supply Voltage:
48 V
more info
Description:1030 MHz, 9.2 dB Bipolar Transistor
Application Industry:
Aerospace & Defence, Avionics
Transistor Type:
Bipolar
Technology:
Si
CW/Pulse:
Pulse
Frequency:
1.03 to 1.09 GHz
Power:
48.54 to 50.04 dBm
Package Type:
Flanged
Power(W):
100.93 W
Gain:
9.2 dB
Supply Voltage:
50 V
Package:
Ceramic
more info
Description:GaAs FET from 4.4 to 5.0 GHz
Application Industry:
Communication, Wireless Infrastructure
Transistor Type:
FET
Technology:
GaAs
Frequency:
4.4 to 5.0 GHz
Power:
38.5 to 39.5 dBm
Package Type:
Flanged
Power(W):
7.08 to 8.91 W
Package:
IB
more info
Description:18.8 W, GaN HEMT Transistor from 6.95 to 7.45 GHz
Application Industry:
SATCOM, Test & Measurement, Radar
Transistor Type:
HEMT
Technology:
GaN on SiC, GaN
CW/Pulse:
CW, Pulse
Frequency:
6.95 to 7.45 GHz
Power:
42.7 dBm
Package Type:
Flanged
Power(W):
18.62 W
Supply Voltage:
28 V
Package:
680B
more info
Description:45 W, LDMOS RF Transistor from 700 MHz to 1.7 GHz
Application Industry:
ISM, Wireless Infrastructure
Transistor Type:
LDMOS
Technology:
Si
CW/Pulse:
CW
Frequency:
700 MHz to 1.7 GHz
Power:
46.53 dBm
Package Type:
Flanged
Power(W):
45 W
Supply Voltage:
28 V
more info
WG60014DD Image
Description:14 W, GaN on SiC Power Transistor from DC to 6 GHz
Application Industry:
Aerospace & Defence, Broadcast, Wireless Infrastru...
Transistor Type:
HEMT
Technology:
GaN on SiC, GaN
CW/Pulse:
CW
Frequency:
DC to 6 GHz
Power:
41.46 dBm
Package Type:
Surface Mount
Power(W):
14 W
Supply Voltage:
28 V
more info
Description:Discrete Power GaN HEMT 25 Watt
Application Industry:
Aerospace & Defence, Wireless Infrastructure
Transistor Type:
HEMT
Technology:
GaN on SiC, GaN
CW/Pulse:
Pulse, CW
Frequency:
DC to 14 GHz
Power:
44 dBm
Power(W):
25.12 W
Gain:
9 to 19 dB
Supply Voltage:
28 V
more info
Description:Ceramic Package GaN AM060WX-BI-R Power HEMT DC-10GHz
Application Industry:
Wireless Infrastructure, Radar, Broadcast
Transistor Type:
HEMT
Technology:
GaN on SiC, GaN
CW/Pulse:
CW
Frequency:
DC to 10 GHz
Power:
36 to 37 dBm (P5dB)
Package Type:
Flanged
Power(W):
3.98 W
Supply Voltage:
28 V
Package:
Ceramic
more info
Description:100 W, Si VDMOS Power Transistor
Application Industry:
Aerospace & Defence, Broadcast, Wireless Infrastru...
Transistor Type:
VDMOS
Technology:
Si
Frequency:
1 to 175 MHz
Power:
50 dBm
Package Type:
Flanged
Power(W):
100 W
more info
Description:DC to 13 GHz Low Noise GaN on SiC HEMT
Application Industry:
Radar, Wireless Infrastructure
Transistor Type:
HEMT
Technology:
GaN on SiC, GaN
CW/Pulse:
Pulse, CW
Frequency:
DC to 13 GHz
Power:
47.4 dBm
Package Type:
Die
Power(W):
55 W
Supply Voltage:
30 V
more info
Description:12 GHz Super Low Noise FET in Hollow Plastic PKG
Application Industry:
Wireless Infrastructure
Transistor Type:
FET
Technology:
GaAs
CW/Pulse:
CW
Frequency:
12 GHz
Package Type:
Surface Mount
Supply Voltage:
1 to 3 V
Package:
Micro-X plastic
more info

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