RF Transistors - Page 11

2359 RF Transistors from 26 Manufacturers meet your specification.
Description:28 W GaN Transistor from DC to 6 GHz for Open RAN Applications
Application Industry:
Cellular, Wireless Infrastructure, Broadcast, Base...
Transistor Type:
HEMT
Technology:
GaN on SiC
CW/Pulse:
CW
Frequency:
DC to 6 GHz
Power:
37.99 dBm
Package Type:
Surface Mount, Flanged
Power(W):
6.3 W
Supply Voltage:
48 V
more info
Description:Surface Mount High Linearity Silicon NPN RF Bipolar Transistor
Application Industry:
Wireless Infrastructure, ISM, Wireless Communicati...
Transistor Type:
Bipolar
Technology:
SiGe
CW/Pulse:
Pulse
Frequency:
DC to 6 GHz
Power:
14.5 dBm
Package Type:
Surface Mount
Power(W):
0.03 W
Supply Voltage:
2.3 V
Package:
SOT343
more info
Description:1.03 to 1.09 GHz, 300 W Transistor for Pulsed Avionics Applications
Application Industry:
Aerospace & Defence
Transistor Type:
MOSFET
Technology:
Si
CW/Pulse:
Pulse
Frequency:
1.03 to 1.09 GHz
Power:
54.77 dBm
Package Type:
Flanged
Power(W):
300 W
Gain:
18.5 dB
Supply Voltage:
50 V
more info
Description:Cost-Effective GaN on SiC Transistor from 1800 to 2200 MHz for Wireless Infra Applications
Application Industry:
Cellular, Wireless Infrastructure, Broadcast, Base...
Transistor Type:
HEMT
Technology:
GaN on SiC
CW/Pulse:
CW
Frequency:
1800 to 2200 MHz
Power:
48.98 dBm
Package Type:
Surface Mount, Flanged
Power(W):
79 W
Gain:
14.7 dB
Supply Voltage:
48 V
more info
Description:870 to 990 MHz, 8.1 dB Bipolar Transistor
Application Industry:
Radar
Transistor Type:
Bipolar
Technology:
Si
CW/Pulse:
Pulse
Frequency:
870 to 990 MHz
Power:
53.22 dBm
Package Type:
Flanged
Power(W):
209.89 W
Gain:
8.1 dB
Supply Voltage:
36 V
Package:
Ceramic
more info
Description:GaN on SiC, GaN HEMT from 1.9 GHz
Application Industry:
Wireless Infrastructure
Transistor Type:
HEMT
Technology:
GaN on SiC, GaN
Frequency:
1.9 GHz
Power:
50 dBm
Package Type:
Flanged
Power(W):
100 W
Supply Voltage:
50 V
more info
Description:10 W, GaN HEMT Transistor from 7.9 to 8.4 GHz
Application Industry:
SATCOM, Radar, Broadcast
Transistor Type:
HEMT
Technology:
GaN on SiC, GaN
CW/Pulse:
CW, Pulse
Frequency:
7.9 to 8.4 GHz
Power:
40 dBm
Package Type:
Flanged
Power(W):
10 W
Supply Voltage:
28 V
Package:
680B
more info
Description:400 W, LDMOS / FET RF Transistor from 400 MHz to 1 GHz
Transistor Type:
LDMOS
Technology:
Si
CW/Pulse:
CW, Pulse
Frequency:
400 MHz to 1 GHz
Power:
56.021 dBm
Package Type:
Flanged
Power(W):
400 W
Supply Voltage:
50 V
more info
WG35165SP Image
Description:165 W, GaN on SiC Power Transistor from 3.4 to 3.6 GHz
Application Industry:
Wireless Infrastructure
Transistor Type:
HEMT
Technology:
GaN on SiC, GaN
CW/Pulse:
CW
Frequency:
3.4 to 3.6 GHz
Power:
52.17 dBm
Package Type:
Flanged
Power(W):
164.82 W
Supply Voltage:
50 V
more info
Description:Discrete Power GaN HEMT 12 Watt
Application Industry:
Aerospace & Defence, Wireless Infrastructure
Transistor Type:
HEMT
Technology:
GaN on SiC, GaN
CW/Pulse:
Pulse, CW
Frequency:
DC to 14 GHz
Power:
41 dBm
Power(W):
12.59 W
Gain:
10 to 20 dB
Supply Voltage:
28 V
more info
Description:High Power Rev 7 GaAs Power FET
Application Industry:
Wireless Infrastructure
Transistor Type:
MESFET
Technology:
GaAs
CW/Pulse:
CW
Frequency:
DC to 6 GHz
Power:
34 dBm
Package Type:
Surface Mount
Power(W):
2.51 W
Supply Voltage:
7 V
Package:
Ceramic
more info

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