RF Transistors - Page 11

2357 RF Transistors from 26 Manufacturers meet your specification.
Description:320 W, GaN on SiC OptiGaN HEMT from 1805 to 1880 MHz for 4G LTE & Open RAN Applications
Application Industry:
Cellular, Wireless Infrastructure, Broadcast, Base...
Transistor Type:
HEMT
Technology:
GaN on SiC
CW/Pulse:
CW
Frequency:
1805 to 1880 MHz
Power:
46.99 dBm
Package Type:
Surface Mount, Flanged
Power(W):
50 W
Gain:
13.9 dB
Supply Voltage:
48 V
more info
Description:RF Transistor for 5 GHz Band Applications
Application Industry:
GNSS, SATCOM, Wireless Infrastructure, Wireless Co...
Transistor Type:
Bipolar
Technology:
Si
Frequency:
Upto 75 GHz
Power:
4 dBm
Package Type:
Surface Mount
Power(W):
0.0025 W
Gain:
22 dB
Supply Voltage:
1.8 V
more info
Description:960 MHz to 1.21 GHz, 450 W Transistor for Pulsed Avionics Applications
Application Industry:
Aerospace & Defence
Transistor Type:
MOSFET
Technology:
Si
CW/Pulse:
Pulse
Frequency:
960 MHz to 1.21 GHz
Power:
56.53 dBm
Package Type:
Flanged
Power(W):
450 W
Gain:
16 dB
Supply Voltage:
50 V
more info
Description:468 W, GaN on SiC OptiGaN HEMT from 1805 to 1880 MHz for 4G LTE & Open RAN Applications
Application Industry:
Cellular, Wireless Infrastructure, Broadcast, Base...
Transistor Type:
HEMT
Technology:
GaN on SiC
CW/Pulse:
CW
Frequency:
1805 to 1880 MHz
Power:
48.98 dBm
Package Type:
Surface Mount, Flanged
Power(W):
79 W
Gain:
14.6 dB
Supply Voltage:
48 V
more info
Description:1030 MHz, 12.3 dB Bipolar Transistor
Application Industry:
Aerospace & Defence, Avionics
Transistor Type:
Bipolar
Technology:
Si
CW/Pulse:
Pulse
Frequency:
1.03 to 1.09 GHz
Power:
52.79 to 54.27 dBm
Package Type:
Flanged
Power(W):
267.3 W
Gain:
12.3 dB
Supply Voltage:
50 V
Package:
Ceramic
more info
Description:GaAs FET from 13.75 to 14.5 GHz
Transistor Type:
FET
Technology:
GaAs
Frequency:
13.75 to 14.5 GHz
Power:
36.5 to 37.5 dBm
Package Type:
Flanged
Power(W):
4.47 to 5.62 W
more info
Description:19 W, GaN HEMT Transistor from 9.2 to 9.6 GHz
Application Industry:
SATCOM, Radar, Broadcast
Transistor Type:
HEMT
Technology:
GaN on SiC, GaN
CW/Pulse:
CW, Pulse
Frequency:
9.2 to 9.6 GHz
Power:
43 dBm
Package Type:
Flanged
Power(W):
19.95 W
Supply Voltage:
28 V
Package:
680B
more info
Description:45 W, LDMOS RF Transistor from 700 MHz to 1.7 GHz
Application Industry:
ISM, Wireless Infrastructure
Transistor Type:
LDMOS
Technology:
Si
CW/Pulse:
CW
Frequency:
700 MHz to 1.7 GHz
Power:
46.53 dBm
Package Type:
Flanged
Power(W):
45 W
Supply Voltage:
28 V
more info
WG60014DD Image
Description:14 W, GaN on SiC Power Transistor from DC to 6 GHz
Application Industry:
Aerospace & Defence, Broadcast, Wireless Infrastru...
Transistor Type:
HEMT
Technology:
GaN on SiC, GaN
CW/Pulse:
CW
Frequency:
DC to 6 GHz
Power:
41.46 dBm
Package Type:
Surface Mount
Power(W):
14 W
Supply Voltage:
28 V
more info
Description:Discrete Power GaN HEMT 12 Watt
Application Industry:
Aerospace & Defence, Wireless Infrastructure
Transistor Type:
HEMT
Technology:
GaN on SiC, GaN
CW/Pulse:
Pulse, CW
Frequency:
DC to 14 GHz
Power:
41 dBm
Power(W):
12.59 W
Gain:
10 to 20 dB
Supply Voltage:
28 V
more info
Description:Ceramic Package GaN AM060WX-BI-R Power HEMT DC-12GHz
Application Industry:
Wireless Infrastructure, Radar, Broadcast
Transistor Type:
HEMT
Technology:
GaN on SiC, GaN
CW/Pulse:
CW
Frequency:
DC to 12 GHz
Power:
32.5 to 33.5 dBm (P5dB)
Package Type:
Flanged
Power(W):
1.78 W
Supply Voltage:
28 V
Package:
Ceramic
more info

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