RF Transistors - Page 10

2359 RF Transistors from 26 Manufacturers meet your specification.
Description:385 W, GaN on SiC OptiGaN HEMT from 1805 to 1880 MHz for 4G LTE & Open RAN Applications
Application Industry:
Cellular, Wireless Infrastructure, Broadcast, Base...
Transistor Type:
HEMT
Technology:
GaN on SiC
CW/Pulse:
CW
Frequency:
1805 to 1880 MHz
Power:
47.99 dBm
Package Type:
Surface Mount, Flanged
Power(W):
63 W
Gain:
15.1 dB
Supply Voltage:
48 V
more info
Description:Single Voltage E-pHEMT Low Noise 30.5 dBm OIP3 in SC-70
Application Industry:
Wireless Infrastructure
Transistor Type:
E-pHEMT
Technology:
GaAs
CW/Pulse:
CW
Frequency:
450 MHz to 6 GHz
Power:
19 dBm
Package Type:
Surface Mount
Power(W):
0.08 W
Supply Voltage:
3 V
Package:
SOT-343
more info
Description:5.6 dB, GaAs pHEMT RF Transistor Up to 40 GHz
Application Industry:
Test & Measurement, Radar, Commercial, Military, W...
Transistor Type:
pHEMT
Technology:
GaAs
Frequency:
Up to 40 GHz
Package Type:
Die
Gain:
5.6 dB
more info
Description:Space Qualified GaAs FETs at 12 GHz
Application Industry:
Military, Space, Test & Measurement, Wireless Infr...
Transistor Type:
FET
Technology:
GaAs
CW/Pulse:
CW
Frequency:
12 GHz
Power:
21 dBm
Package Type:
Chip
Power(W):
0.13 W
more info
Description:15 W GaN-on-SiC HEMT from DC to 8 GHz
Application Industry:
Radar, Test & Measurement, Communication, Wireless...
Transistor Type:
HEMT
Technology:
GaN, GaN on SiC
CW/Pulse:
Pulse, CW
Frequency:
DC to 8 GHz
Power:
41.76 dBm
Package Type:
Surface Mount
Power(W):
15 W
Gain:
16 to 17 dB
Supply Voltage:
50 V
Package:
DFN 14 Lead
more info
Description:DC to 3.6 GHz, HEMT Transistor
Application Industry:
Wireless Infrastructure
Transistor Type:
HEMT
Technology:
GaN on SiC, GaN
CW/Pulse:
Pulse, CW
Frequency:
DC to 3.6 GHz
Power:
49.78 dBm
Package Type:
Surface Mount
Power(W):
95.06 W
Gain:
25 dB
Supply Voltage:
48 V
more info
Description:30 W, 3300-3900 MHz, 28V, GaN HEMT for WiMAX
Application Industry:
Wireless Infrastructure, Wireless Communication
Transistor Type:
HEMT
Technology:
GaN on SiC, GaN
CW/Pulse:
CW
Frequency:
3.3 to 3.9 GHz
Power:
36.02 dBm
Package Type:
Flanged
Power(W):
4 W
Supply Voltage:
50 V
more info
Description:2.5 kW LDMOS Power Transistor from 1 to 400 MHz
Application Industry:
Wireless Infrastructure, ISM, Broadcast, Cellular
Transistor Type:
LDMOS
CW/Pulse:
CW, Pulse
Frequency:
1 to 400 MHz
Package Type:
Flanged
Gain:
28.5 to 29.8 dB
Supply Voltage:
75 V
more info
Description:HIGH EFFICIENCY HETEROJUNCTION POWER FET CHIP (.25µm x 300µm)
Application Industry:
Test & Measurement, Aerospace & Defence, Commercia...
Transistor Type:
pHEMT
Technology:
GaAs
CW/Pulse:
CW
Frequency:
DC to 26 GHz
Power:
25.5 dBm
Package Type:
Chip
Power(W):
0.35 W
Gain:
10.5 to 15.5 dB
Supply Voltage:
8 V
more info
MRF8S7235N Image
Description:Single W-CDMA Lateral N-Channel RF Power MOSFET, 728-768 MHz, 63 W Avg., 28 V
Application Industry:
Wireless Infrastructure
Transistor Type:
LDMOS
Technology:
Si
CW/Pulse:
Pulse, CW
Frequency:
728 to 768 MHz
Power:
47.99 dBm
Package Type:
Flanged
Power(W):
62.95 W
Supply Voltage:
28 V
Package:
OM--780--2 PLASTIC
more info
Description:DC to 470 MHz, MOSFET Transistor
Application Industry:
Wireless Infrastructure, Broadcast
Transistor Type:
MOSFET
Technology:
Si
CW/Pulse:
CW
Frequency:
DC to 470 MHz
Power:
33.62 dBm
Package Type:
Flanged
Power(W):
2.3 W
Gain:
10 dB
Supply Voltage:
3.6 V
more info

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