RF Transistors - Page 3

2359 RF Transistors from 26 Manufacturers meet your specification.
Description:15.8 W GaN Transistor from 3.4 to 3.8 GHz for Open RAN Applications
Application Industry:
Cellular, Wireless Infrastructure, Broadcast, Base...
Transistor Type:
HEMT
Technology:
GaN on SiC
CW/Pulse:
CW
Frequency:
3400 to 3800 MHz
Power:
29.03 dBm
Package Type:
Surface Mount, Flanged
Power(W):
0.8 W
Gain:
18.2 dB
Supply Voltage:
48 V
more info
Description:14 W GaN Power Transistor from 30 MHz to 2.7 GHz
Application Industry:
Broadcast, Wireless Infrastructure
Transistor Type:
HEMT
Technology:
GaN on Si, GaN
CW/Pulse:
CW
Frequency:
30 MHz to 2.7 GHz
Power:
41.5 dBm
Package Type:
Surface Mount
Power(W):
14.1 W
Gain:
13.5 to 18 dB
Supply Voltage:
12 to 34 V
more info
Description:1200 Watts, 50 Volts, 32us, 2% L-Band Avionics 1030/1090 MHz
Application Industry:
Aerospace & Defence, Avionics
Transistor Type:
HEMT
Technology:
GaN on SiC, GaN
CW/Pulse:
Pulse
Frequency:
1.03 to 1.09 GHz
Power:
60.79 dBm
Package Type:
Flanged
Power(W):
1199.5 W
Supply Voltage:
50 V
Package:
55-Q03
more info
Description:2.5 to 2.7 GHz, HEMT Transistor
Application Industry:
Wireless Infrastructure
Transistor Type:
HEMT
Technology:
GaN on SiC, GaN
CW/Pulse:
Pulse
Frequency:
2.5 to 2.7 GHz
Power:
55.61 dBm
Package Type:
Flanged
Power(W):
363.92 W
Gain:
22 dB
Supply Voltage:
48 V
Package:
Ceramic
more info
Description:180 W GaN on SiC HEMT from 2700 to 3100 MHz
Application Industry:
Radar
Transistor Type:
HEMT
Technology:
GaN on SiC, GaN
CW/Pulse:
CW, Pulse
Frequency:
2700 to 3100 MHz
Power:
52.55 dBm
Package Type:
Earless Flanged
Power(W):
180 W
Gain:
15 dB
Supply Voltage:
50 V
more info
Description:300 W GaN-on-SiC HEMT Power Transistor from 2.4 to 2.5 GHz
Application Industry:
ISM
Transistor Type:
HEMT
Technology:
GaN on SiC
CW/Pulse:
Pulse, CW
Frequency:
2.4 to 2.5 GHz
Package Type:
Surface Mount
Supply Voltage:
50 V
more info
Description:HIGH EFFICIENCY HETEROJUNCTION POWER FET CHIP (.25µm x 1600µm)
Application Industry:
Test & Measurement, Aerospace & Defence, Commercia...
Transistor Type:
pHEMT
Technology:
GaAs
CW/Pulse:
CW
Frequency:
DC to 26 GHz
Power:
33.2 dBm
Package Type:
Chip
Power(W):
2.09 W
Gain:
6.4 to 10.8 dB
Supply Voltage:
8 V
more info
MMRF1006HS Image
Description:Lateral N-Channel Broadband RF Power MOSFET, 10-500 MHz, 1000 W, 50 V
Application Industry:
Wireless Infrastructure, Aerospace & Defence, Rada...
Transistor Type:
LDMOS
Technology:
Si
CW/Pulse:
Pulse, CW
Frequency:
10 to 500 MHz
Power:
53.01 dBm
Package Type:
Flanged
Power(W):
199.99 W
Supply Voltage:
50 V
Package:
NI--1230S--4S
more info
Description:Ka-band GaN-HEMT MMIC for Satellite Earth Stations
Application Industry:
Aerospace & Defence, SATCOM
Transistor Type:
HEMT
Technology:
GaN on SiC, GaN
Frequency:
27.5 to 31 GHz
Power:
39 dBm
Package Type:
Flanged
Power(W):
8 W
Gain:
15 dB
more info
Description:SiGe:C NPN Heterojunction Bipolar Transistor
Application Industry:
SATCOM, Broadcast, Wireless Communication, Wireles...
Transistor Type:
HBT
Technology:
SiGe
Frequency:
150 MHz to 12 GHz
Power:
9 dBm
Package Type:
Surface Mount
Power(W):
0.01 W
Supply Voltage:
3 V
Package:
TSLP-3-9
more info
Description:960 MHz to 1.21 GHz, 450 W Transistor for Pulsed Avionics Applications
Application Industry:
Aerospace & Defence
Transistor Type:
MOSFET
Technology:
Si
CW/Pulse:
Pulse
Frequency:
960 MHz to 1.21 GHz
Power:
56.53 dBm
Package Type:
Flanged
Power(W):
450 W
Gain:
16 dB
Supply Voltage:
50 V
more info

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