RF Transistors - Page 60

2357 RF Transistors from 26 Manufacturers meet your specification.
Description:GaN on SiC HEMT from 2620 to 2690 MHz
Application Industry:
Wireless Infrastructure, Wireless Communication
Transistor Type:
HEMT
Technology:
GaN on SiC
CW/Pulse:
Pulse
Frequency:
2620 to 2690 MHz
Power:
46.02 to 53.4 dBm
Package Type:
Flanged
Power(W):
40 to 219 W
Gain:
11.5 to 12.5 dB
Supply Voltage:
55 V
Package:
RF12001DHKR3
more info
Description:78 W, GaN HEMT Transistor from 1.2 to 1.4 GHz
Application Industry:
Test & Measurement, Radar, Wireless Infrastructure
Transistor Type:
HEMT
Technology:
GaN on SiC, GaN
CW/Pulse:
Pulse
Frequency:
1.2 to 1.4 GHz
Power:
48.9 dBm
Package Type:
Flanged
Power(W):
77.62 W
Gain:
17 dB
Supply Voltage:
48 V
Package:
680B
more info
PD85025-E Image
Description:30 W, LDMOS / MOSFET RF Transistor operating at 870 MHz
Application Industry:
Broadcast, Commercial, Wireless Infrastructure
Transistor Type:
LDMOS
Technology:
Si
CW/Pulse:
CW
Frequency:
870 MHz
Power:
44.77 dBm
Package Type:
Surface Mount
Power(W):
25 to 30 W
Supply Voltage:
13.6 V
more info
WG027031200I Image
Description:200 W, GaN on SiC Power Transistor from 2.7 to 3.1 GHz
Application Industry:
Radar, Wireless Infrastructure
Transistor Type:
HEMT
Technology:
GaN on SiC, GaN
CW/Pulse:
CW
Frequency:
2.7 to 3.1 GHz
Power:
53.01 dBm
Package Type:
Flanged
Power(W):
199.99 W
Supply Voltage:
36 V
more info
Description:HiFET High Voltage GaAs FET
Application Industry:
Wireless Infrastructure, Avionics
Transistor Type:
FET
Technology:
GaAs
CW/Pulse:
CW
Frequency:
DC to 6 GHz
Power:
36 dBm
Package Type:
Flanged
Power(W):
3.98 W
Supply Voltage:
28 to 32 V
Package:
Ceramic
more info
Description:80 W, Si VDMOS Power Transistor
Application Industry:
Aerospace & Defence, Broadcast, Wireless Infrastru...
Transistor Type:
VDMOS
Technology:
Si
Frequency:
1 to 175 MHz
Power:
49 dBm
Package Type:
Flanged
Power(W):
80 W
more info
Description:20 Watts, 26.5 Volts, Class A UHF Television - Band IV & V
Application Industry:
Wireless Infrastructure, Aerospace & Defence, Broa...
Transistor Type:
Bipolar
Technology:
Si
CW/Pulse:
CW
Frequency:
470 to 860 MHz
Power:
43.01 dBm
Package Type:
2-Hole Flanged
Power(W):
20 W
Supply Voltage:
26.5 V
Package:
55JV-2
more info
Description:Space Qualified GaAs FETs at 12 GHz
Application Industry:
Military, Space, Test & Measurement, Wireless Infr...
Transistor Type:
FET
Technology:
GaAs
CW/Pulse:
CW
Frequency:
12 GHz
Power:
21 dBm
Package Type:
Chip
Power(W):
0.13 W
more info
Description:285 W, 36 V, DC to 2 GHz, Flanged Mount, GaN RF Power Transistor
Application Industry:
Wireless Infrastructure, Radar, Aerospace & Defenc...
Transistor Type:
HEMT
Technology:
GaN on SiC, GaN
CW/Pulse:
CW
Frequency:
DC to 2 GHz
Power:
54.55 dBm
Package Type:
Flanged
Power(W):
285.1 W
Gain:
19 dB
Supply Voltage:
36 V
more info
Description:Si Based Bipolar Transistor
Application Industry:
Aerospace & Defence, ISM
Transistor Type:
Bipolar
Technology:
Si
CW/Pulse:
CW
Frequency:
960 MHz to 1.215 GHz
Power:
44.77 dBm
Package Type:
Flanged
Power(W):
29.99 W
Gain:
9 to 9.5 dB
Supply Voltage:
36 V
Package:
Flange Ceramic
more info
Description:43.98 dBm (25 W), LDMOS Transistor from 500 to 1400 MHz
Transistor Type:
LDMOS
Technology:
Si
CW/Pulse:
Pulse
Frequency:
500 MHz to 1.4 GHz
Power:
43.98 dBm
Package Type:
Surface Mount
Power(W):
25 W
Supply Voltage:
50 V
Package:
SOT467C
more info

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