RF Transistors - Page 13

2359 RF Transistors from 26 Manufacturers meet your specification.
Description:302 W, GaN on SiC OptiGaN HEMT from 3400 to 3800 MHz for 4G LTE & Open RAN Applications
Application Industry:
Cellular, Wireless Infrastructure, Broadcast, Base...
Transistor Type:
HEMT
Technology:
GaN on SiC
CW/Pulse:
CW
Frequency:
3400 to 3800 MHz
Power:
46.53 dBm
Package Type:
Surface Mount, Flanged
Power(W):
45 W
Gain:
11.4 dB
Supply Voltage:
48 V
more info
MRFE8VP8600H Image
Description:Broadband RF Power LDMOS Transistor, 470-860 MHz, 600 W, 50 V
Application Industry:
ISM, Broadcast
Transistor Type:
LDMOS
Technology:
Si
CW/Pulse:
Pulse, CW
Frequency:
470 to 860 MHz
Power:
51.46 dBm
Package Type:
Flanged
Power(W):
139.96 W
Supply Voltage:
50 V
Package:
NI--1230H–4S
more info
Description:175 to 530 MHz, MOSFET Transistor
Application Industry:
Wireless Infrastructure, Broadcast
Transistor Type:
MOSFET
Technology:
Si
CW/Pulse:
CW
Frequency:
175 to 530 MHz
Power:
46.53 dBm
Package Type:
Flanged
Power(W):
44.98 W
Supply Voltage:
12.5 V
more info
Description:RF Transistor for 5 GHz Band Applications
Application Industry:
GNSS, SATCOM, Wireless Infrastructure, Wireless Co...
Transistor Type:
Bipolar
Technology:
Si
Frequency:
Upto 75 GHz
Power:
4 dBm
Package Type:
Surface Mount
Power(W):
0.0025 W
Gain:
22 dB
Supply Voltage:
1.8 V
more info
Description:420 to 470 MHz, 1100 W Transistor for Pulsed Avionics Applications
Application Industry:
Radar
Transistor Type:
MOSFET
Technology:
Si
CW/Pulse:
Pulse
Frequency:
420 to 470 MHz
Power:
60.41 dBm
Package Type:
Flanged
Power(W):
1100 W
Gain:
16.5 dB
Supply Voltage:
50 V
more info
Description:240 W, GaN on SiC OptiGaN HEMT from 2300 to 2400 MHz for 4G LTE & Open RAN Applications
Application Industry:
Cellular, Wireless Infrastructure, Broadcast, Base...
Transistor Type:
HEMT
Technology:
GaN on SiC
CW/Pulse:
CW
Frequency:
2300 to 2400 MHz
Power:
46.02 dBm
Package Type:
Surface Mount, Flanged
Power(W):
40 W
Gain:
15.3 dB
Supply Voltage:
48 V
more info
Description:653 to 687 MHz, Bipolar Transistor
Application Industry:
Aerospace & Defence, Avionics
Transistor Type:
Bipolar
Technology:
Si
CW/Pulse:
Pulse
Frequency:
653 to 687 MHz
Power:
50 dBm
Package Type:
Flanged
Power(W):
100 W
Gain:
13.1 dB
Supply Voltage:
50 V
more info
Description:GaAs FET from 14.5 GHz
Transistor Type:
FET
Technology:
GaAs
Frequency:
14.5 GHz
Power:
29 to 30 dBm
Package Type:
Chip
Power(W):
0.79 to 1 W
more info
Description:15 to 18.6 W, GaN HEMT Transistor from 7.8 to 8.2 GHz
Application Industry:
SATCOM, Radar, Broadcast
Transistor Type:
HEMT
Technology:
GaN on SiC, GaN
CW/Pulse:
CW, Pulse
Frequency:
7.8 to 8.2 GHz
Power:
42.7 dBm
Package Type:
Flanged
Power(W):
18.62 W
Supply Voltage:
28 V
Package:
680B
more info
RF2L42008CG2 Image
Description:8 W, LDMOS RF Transistor from 700 to 4200 MHz
Application Industry:
Avionics, Radar, ISM, Wireless Infrastructure
Transistor Type:
LDMOS
Technology:
Si
CW/Pulse:
Pulse
Frequency:
700 to 4200 MHz
Power:
39.03 dBm
Package Type:
Flanged
Power(W):
8 W
Supply Voltage:
28 V
more info
WG21200S Image
Description:200W GaN power transistor for Infrastructure applications at frequencies from 2110 MHz to 2170 MHz
Application Industry:
Wireless Infrastructure
Transistor Type:
FET
Technology:
GaN on SiC, GaN
CW/Pulse:
CW
Frequency:
2.11 to 2.17 GHz
Power:
53.01 dBm
Package Type:
Flanged
Power(W):
199.99 W
Supply Voltage:
48 V
Package:
Flanged
more info

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