RF Transistors - Page 12

2360 RF Transistors from 26 Manufacturers meet your specification.
Description:Cost-Effective GaN on SiC Transistor from 1800 to 2200 MHz for Wireless Infra Applications
Application Industry:
Cellular, Wireless Infrastructure, Broadcast, Base...
Transistor Type:
HEMT
Technology:
GaN on SiC
CW/Pulse:
CW
Frequency:
1800 to 2200 MHz
Power:
48.98 dBm
Package Type:
Surface Mount, Flanged
Power(W):
79 W
Gain:
14.7 dB
Supply Voltage:
48 V
more info
Description:250 W LDMOS Power Transistor from 1 to 1300 MHz
Application Industry:
Broadcast, Wireless Communication
Transistor Type:
LDMOS
Technology:
Si
CW/Pulse:
CW
Frequency:
1 MHz to 1.3 GHz
Power:
53.98 dBm
Package Type:
Flanged
Power(W):
250 W
Supply Voltage:
28 VDC
more info
Description:DC to 6 GHz Low Noise GaN on SiC HEMT
Application Industry:
Radar, Wireless Infrastructure
Transistor Type:
HEMT
Technology:
GaN on SiC, GaN
CW/Pulse:
Pulse, CW
Frequency:
DC to 6 GHz
Power:
41.76 dBm
Package Type:
Surface Mount
Power(W):
15 W
Gain:
18 to 20 dB
Supply Voltage:
50 V
more info
Description:GaAs pHEMT RF Transistor Up to 10 GHz
Application Industry:
Test & Measurement, Radar, Commercial, Military, W...
Transistor Type:
pHEMT
Technology:
GaAs
Frequency:
Up to 10 GHz
Power:
23 dBm
Package Type:
Surface mount
Power(W):
0.2 W
Package:
QFN
more info
Description:AlGaAs/InGaAs pHEMT for Military & Space Applications Up to 12 GHz
Application Industry:
Commercial, Military, Space, Wireless Infrastructu...
Transistor Type:
pHEMT
Technology:
AlGaAs/InGaAs
CW/Pulse:
CW
Frequency:
DC to 12 GHz
Power:
33 dBm
Package Type:
Chip
Power(W):
2 W
Supply Voltage:
2.5 to 8 V
more info
Description:80 W GaN on SiC HEMT from DC to 3.7 GHz
Application Industry:
Radar, Wireless Infrastructure
Transistor Type:
HEMT
Technology:
GaN, GaN on SiC
CW/Pulse:
CW, Pulse
Frequency:
DC to 3.7 GHz
Power:
50 dBm
Package Type:
Die
Power(W):
100 W
Gain:
14.5 to 15.5 dB
Supply Voltage:
50 V
more info
Description:RF POWER MOSFET N-CHANNEL ENHANCEMENT MODE
Application Industry:
ISM, Commercial
Transistor Type:
MOSFET
Technology:
Si
CW/Pulse:
Pulse
Frequency:
DC to 45 MHz
Power:
54.77 dBm
Package Type:
Die
Power(W):
299.92 W
Supply Voltage:
150 V
Package:
TO-264 [L]
more info
Description:DC to 4 GHz, HEMT Transistor
Application Industry:
Wireless Infrastructure
Transistor Type:
HEMT
Technology:
GaN on SiC, GaN
CW/Pulse:
Pulse
Frequency:
DC to 4 GHz
Power:
44.77 dBm
Package Type:
Surface Mount
Power(W):
29.99 W
Gain:
17 dB
Supply Voltage:
32 V
more info
Description:15-W, 3300 to 3900-MHz, 28-V, GaN HEMT for WiMAX
Application Industry:
Wireless Infrastructure, Wireless Communication
Transistor Type:
HEMT
Technology:
GaN on SiC, GaN
CW/Pulse:
Pulse
Frequency:
3.3 to 3.9 GHz
Power:
33.01 dBm
Package Type:
Flanged
Power(W):
2 W
Supply Voltage:
50 V
more info
Description:2.5 kW LDMOS Power Transistor from 1 to 400 MHz
Application Industry:
Wireless Infrastructure, ISM, Broadcast, Cellular
Transistor Type:
LDMOS
CW/Pulse:
CW, Pulse
Frequency:
1 to 400 MHz
Package Type:
Flanged
Gain:
28.5 to 29.8 dB
Supply Voltage:
75 V
more info
Description:HIGH EFFICIENCY HETEROJUNCTION POWER FET CHIP (.25µm x 400µm)
Application Industry:
Test & Measurement, Aerospace & Defence, Commercia...
Transistor Type:
pHEMT
Technology:
GaAs
CW/Pulse:
CW
Frequency:
DC to 26.5 GHz
Power:
25.5 dBm
Package Type:
Chip
Power(W):
0.35 W
Gain:
8.5 to 13.5 dB
Supply Voltage:
8 V
more info

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