RF Transistors - Page 14

2359 RF Transistors from 26 Manufacturers meet your specification.
Description:316 W, GaN on SiC OptiGaN HEMT from 1805 to 2200 MHz for 4G LTE & Open RAN Applications
Application Industry:
Cellular, Wireless Infrastructure, Broadcast, Base...
Transistor Type:
HEMT
Technology:
GaN on SiC
CW/Pulse:
CW
Frequency:
1805 to 2200 MHz
Power:
46.43 dBm
Package Type:
Surface Mount, Flanged
Power(W):
44 W
Gain:
15.4 dB
Supply Voltage:
48 V
more info
Description:45 W, Si VDMOS Power Transistor
Application Industry:
Aerospace & Defence, Broadcast, Wireless Infrastru...
Transistor Type:
VDMOS
Technology:
Si
Frequency:
1 to 500 MHz
Power:
46 dBm
Package Type:
Flanged
Power(W):
45 W
more info
Description:DC to 40 GHz Low Noise GaN on SiC pHEMT
Application Industry:
Radar, Wireless Infrastructure
Transistor Type:
pHEMT
Technology:
GaN on SiC, GaAs, GaN
CW/Pulse:
CW
Frequency:
DC to 40 GHz
Power:
24.47 dBm
Package Type:
Die, Chip
Power(W):
0.28 W
Gain:
8 to 14 dB
Supply Voltage:
3 V
more info
Description:Single Voltage E-pHEMT Low Noise 36 dBm OIP3 in SC-70
Application Industry:
Wireless Infrastructure
Transistor Type:
E-pHEMT
Technology:
GaAs
CW/Pulse:
CW
Frequency:
450 MHz to 6 GHz
Power:
20.4 dBm
Package Type:
Surface Mount
Power(W):
0.11 W
Supply Voltage:
3 V
Package:
SOT-343
more info
Description:21 dB, GaAs E-pHEMT RF Transistor from 100 MHz to 8 GHz
Application Industry:
Test & Measurement, Radar, Wireless Infrastructure...
Transistor Type:
E-pHEMT
Technology:
GaAs
Frequency:
100 MHz to 8 GHz
Power:
26 dBm
Package Type:
Die
Power(W):
0.4 W
Gain:
21 dB
more info
Description:Space Qualified LOW NOISE FETS from 4 to 12 GHz
Application Industry:
Military, Space, Test & Measurement, Wireless Infr...
Transistor Type:
FET
CW/Pulse:
CW
Frequency:
4 to 12 GHz
Power:
20 dBm
Package Type:
Chip
Power(W):
0.1 W
Gain:
8 to 12 dB
more info
Description:80 W GaN on SiC HEMT from DC to 3.7 GHz
Application Industry:
Radar, Wireless Infrastructure
Transistor Type:
HEMT
Technology:
GaN, GaN on SiC
CW/Pulse:
CW, Pulse
Frequency:
DC to 3.7 GHz
Power:
50 dBm
Package Type:
Die
Power(W):
100 W
Gain:
14.5 to 15.5 dB
Supply Voltage:
50 V
more info
Description:1200 W, GaN Transistor from 1030 to 1090 MHz
Application Industry:
Avionics
Technology:
GaN
CW/Pulse:
CW
Frequency:
1030 to 1090 MHz
Power:
60.79 dBm
Package Type:
Ceramic
Power(W):
1200 W
Supply Voltage:
50 V
more info
Description:DC to 3.2 GHz, 51 dBm Gan Transistor
Application Industry:
Wireless Infrastructure, Radar, Aerospace & Defenc...
Transistor Type:
HEMT
Technology:
GaN on SiC, GaN
CW/Pulse:
Pulse, CW
Frequency:
DC to 3.2 GHz
Power:
50.97 dBm
Package Type:
Flanged
Power(W):
125.03 W
Gain:
17.5 dB
Supply Voltage:
12 to 55 V
more info
Description:15-W, 28-V, GaN HEMT for Linear Communications ranging from VHF to 3 GHz
Application Industry:
Wireless Infrastructure, Wireless Communication
Transistor Type:
HEMT
Technology:
GaN on SiC, GaN
CW/Pulse:
Pulse
Frequency:
VHF to 3 GHz
Power:
33.01 dBm
Package Type:
Flanged
Power(W):
2 W
Supply Voltage:
50 V
more info
Description:10 W, 2-Stage LDMOS Doherty Transistor MMIC from 1805 to 1880 MHz
Application Industry:
Wireless Infrastructure
Transistor Type:
LDMOS
CW/Pulse:
CW, Pulse
Frequency:
1805 to 1880 MHz
Power:
40 dBm
Package Type:
Surface Mount
Power(W):
10 W
Supply Voltage:
26 V
Package:
21 Pin-LGA
more info

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