RF Transistors - Page 15

2359 RF Transistors from 26 Manufacturers meet your specification.
Description:398 W, GaN on SiC OptiGaN HEMT from 1930 to 2000 MHz for 4G LTE & Open RAN Applications
Application Industry:
Cellular, Wireless Infrastructure, Broadcast, Base...
Transistor Type:
HEMT
Technology:
GaN on SiC
CW/Pulse:
CW
Frequency:
1930 to 2000 MHz
Power:
48.98 dBm
Package Type:
Surface Mount, Flanged
Power(W):
79 W
Gain:
14.4 dB
Supply Voltage:
48 V
more info
Description:HIGH EFFICIENCY HETEROJUNCTION POWER FET CHIP (.3 µm x 200 µm)
Application Industry:
Test & Measurement, Aerospace & Defence, Commercia...
Transistor Type:
MESFET
Technology:
GaAs
CW/Pulse:
CW
Frequency:
DC to 26.5 GHz
Power:
20.2 dBm
Package Type:
Chip
Power(W):
0.1 W
Gain:
9.2 to 13.5 dB
Supply Voltage:
6 to 8 V
more info
MRF6V12500GS Image
Description:Pulsed Lateral N-Channel RF Power MOSFET, 960-1215 MHz, 500 W, 50 V
Application Industry:
Aerospace & Defence, Avionics
Transistor Type:
LDMOS
Technology:
Si
CW/Pulse:
Pulse
Frequency:
960 MHz to 1.215 GHz
Power:
56.99 dBm
Package Type:
Flanged
Power(W):
500.03 W
Supply Voltage:
50 V
Package:
NI--780GS--2L
more info
Description:DC to 12 GHz, HEMT Transistor
Application Industry:
Wireless Infrastructure, Aerospace & Defence, Broa...
Transistor Type:
HEMT
Technology:
InGaAs
CW/Pulse:
CW
Frequency:
DC to 12 GHz
Package Type:
Flanged
Gain:
11 to 12 dB
Supply Voltage:
2 V
more info
Description:NPN RF Bipolar Transistor for Wireless Applications up to 6 GHz
Application Industry:
ISM, Broadcast, Wireless Infrastructure, Wireless ...
Transistor Type:
Bipolar
Technology:
SiGe
Frequency:
DC to 6 GHz
Package Type:
Flanged
more info
Description:1.2 to 1.4 GHz, 84 W Transistor for Pulsed Avionics Applications
Application Industry:
Aerospace & Defence
Transistor Type:
MOSFET
Technology:
Si
CW/Pulse:
Pulse
Frequency:
1.2 to 1.4 GHz
Power:
49.24 dBm
Package Type:
Flanged
Power(W):
84 W
Gain:
20.5 dB
Supply Voltage:
50 V
more info
Description:316 W, GaN on SiC OptiGaN HEMT from 2496 to 2690 MHz for 4G LTE & Open RAN Applications
Application Industry:
Cellular, Wireless Infrastructure, Broadcast, Base...
Transistor Type:
HEMT
Technology:
GaN on SiC
CW/Pulse:
CW
Frequency:
2496 to 2690 MHz
Power:
46.02 dBm
Package Type:
Surface Mount, Flanged
Power(W):
40 W
Gain:
14.5 dB
Supply Voltage:
48 V
more info
Description:1030 to 1090 MHz, 9.5 dB Bipolar Transistor
Application Industry:
Aerospace & Defence, Avionics
Transistor Type:
Bipolar
Technology:
Si
CW/Pulse:
Pulse
Frequency:
1.03 to 1.09 GHz
Power:
53.98 dBm
Package Type:
Flanged
Power(W):
250.03 W
Gain:
9.5 dB
Supply Voltage:
50 V
Package:
Ceramic
more info
Description:GaAs FET from 14.5 GHz
Transistor Type:
FET
Technology:
GaAs
Frequency:
14.5 GHz
Power:
23 to 24 dBm
Package Type:
Flanged
Power(W):
0.2 to 0.25 W
Package:
WG
more info
Description:4 W, GaN HEMT Transistor from DC to 18 GHz
Application Industry:
SATCOM, Test & Measurement, Radar
Transistor Type:
HEMT
Technology:
GaN on SiC, GaN
CW/Pulse:
CW, Pulse
Frequency:
DC to 18 GHz
Power:
36 dBm
Package Type:
Flanged
Power(W):
4 W
Supply Voltage:
28 to 32 V
Package:
680B
more info
Description:80 W, LDMOS RF Transistor from DC to 945 MHz
Application Industry:
Avionics, Commercial, Wireless Infrastructure
Transistor Type:
LDMOS
Technology:
Si
CW/Pulse:
CW
Frequency:
DC to 945 MHz
Power:
49.03 dBm
Package Type:
Flanged
Power(W):
80 W
Supply Voltage:
28 V
more info

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