RF Transistors - Page 16

2359 RF Transistors from 26 Manufacturers meet your specification.
Description:33.1 W, GaN on SiC OptiGaN HEMT from 2620 to 2690 MHz for 4G LTE & Open RAN Applications
Application Industry:
Cellular, Wireless Infrastructure, Broadcast, Base...
Transistor Type:
HEMT
Technology:
GaN on SiC
CW/Pulse:
CW
Frequency:
2620 to 2690 MHz
Power:
35.05 dBm
Package Type:
Surface Mount, Flanged
Power(W):
3.2 W
Gain:
18.6 dB
Supply Voltage:
48 V
more info
WG60028D Image
Description:GaN-on-SiC Dual-Output Transistor for Aerospace & Telecom Applications
Application Industry:
Aerospace & Defence, Broadcast, Wireless Infrastru...
Technology:
GaN on SiC, GaN
Frequency:
DC to 6 GHz
Power:
44.47 dBm
Package Type:
Surface Mount
Power(W):
28 W
Supply Voltage:
50 V
Package:
DFN
more info
Description:Ceramic Package GaN AM060WX-BI-R Power HEMT DC-6GHz
Application Industry:
Wireless Infrastructure, Radar, ISM, Commercial
Transistor Type:
HEMT
Technology:
GaN on SiC, GaN
CW/Pulse:
Pulse, CW
Frequency:
DC to 6 GHz
Power:
42 to 43 dBm (P5dB)
Package Type:
Flanged
Power(W):
15.85 W
Supply Voltage:
28 Vdc
Package:
Ceramic
more info
Description:30 W, Si LDMOS Power Transistor
Application Industry:
Aerospace & Defence, Broadcast, Wireless Infrastru...
Transistor Type:
LDMOS
Technology:
Si
Frequency:
1 to 1000 MHz
Power:
44 dBm
Package Type:
Flanged
Power(W):
30 W
more info
Description:180 W GaN HEMT Transistor from 1.2 to 1.4 GHz
Application Industry:
Radar, Aerospace & Defence
Transistor Type:
HEMT
Technology:
GaN on SiC, GaN
CW/Pulse:
CW, Pulse
Frequency:
1.2 to 1.4 GHz
Power:
52 to 54 dBm (Psat)
Package Type:
Ceramic, 4-Hole Flanged
Power(W):
158.5 to 251.18 W (Psat)
Supply Voltage:
20 to 50 V
Package:
Hermatic Flange Ceramic
more info
Description:Single Voltage E-pHEMT Low Noise 42 dBm OIP3 in LPCC
Application Industry:
Wireless Infrastructure
Transistor Type:
E-pHEMT
Technology:
GaAs
CW/Pulse:
CW
Frequency:
0.05 to 6 GHz
Power:
26.5 dBm
Package Type:
Chip
Power(W):
0.45 W
Supply Voltage:
4.5 V
Package:
SMT 2x2
more info
Description:GaAs pHEMT RF Transistor Up to 10 GHz
Application Industry:
Test & Measurement, Radar, Commercial, Military, W...
Transistor Type:
pHEMT
Technology:
GaAs
Frequency:
Up to 10 GHz
Power:
23 dBm
Package Type:
Surface mount
Power(W):
0.2 W
Package:
QFN
more info
Description:18 GHz GaAs MESFET for Military and Commercial Applications
Application Industry:
Commercial, Military, Space, Wireless Infrastructu...
Transistor Type:
FET
Technology:
GaAs
CW/Pulse:
CW
Frequency:
DC to 18 GHz
Power:
26.5 dBm
Package Type:
Chip
Power(W):
0.45 W
Supply Voltage:
2 to 7 V
more info
Description:20 W GaN on SiC HEMT from DC to 7 GHz
Application Industry:
Radar, Wireless Infrastructure
Transistor Type:
HEMT
Technology:
GaN, GaN on SiC
CW/Pulse:
CW, Pulse
Frequency:
DC to 7 GHz
Power:
44.77 dBm
Package Type:
Die
Power(W):
29.99 W
Gain:
15.2 to 17.2 dB
Supply Voltage:
50 V
more info
Description:250 W, GaN Transistor from 1030 to 1090 MHz
Application Industry:
Avionics
Technology:
GaN
CW/Pulse:
CW
Frequency:
1030 to 1090 MHz
Power:
53.97 dBm
Package Type:
Ceramic
Power(W):
250 W
Supply Voltage:
50 V
more info
Description:DC to 18 GHz, HEMT Transistor
Application Industry:
Aerospace & Defence, Wireless Infrastructure, Wire...
Transistor Type:
HEMT
Technology:
GaN on SiC, GaN
CW/Pulse:
Pulse, CW
Frequency:
DC to 18 GHz
Power:
40.1 dBm
Package Type:
Die
Power(W):
10.23 W
Gain:
21 dB
Supply Voltage:
12 to 40 V
more info

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