RF Transistors - Page 17

2359 RF Transistors from 26 Manufacturers meet your specification.
Description:220 W, GaN on SiC OptiGaN HEMT from 1805 to 1880 MHz for 4G LTE & Open RAN Applications
Application Industry:
Cellular, Wireless Infrastructure, Broadcast, Base...
Transistor Type:
HEMT
Technology:
GaN on SiC
CW/Pulse:
CW
Frequency:
1805 to 1880 MHz
Power:
46.53 dBm
Package Type:
Surface Mount, Flanged
Power(W):
45 W
Gain:
15.8 dB
Supply Voltage:
48 V
more info
Description:500 Watt GaN on Silicon Transistor
Application Industry:
Radar
Transistor Type:
HEMT
Technology:
GaN on Si, GaN
CW/Pulse:
Pulse
Frequency:
1200 to 1400 MHz
Power:
57 dBm
Package Type:
Surface Mount
Power(W):
500 W
Gain:
16 dB
Supply Voltage:
50 V
more info
Description:800 W LDMOS Power Transistor from 1 to 650 MHz
Application Industry:
Radar, Broadcast, Wireless Infrastructure
Transistor Type:
LDMOS
CW/Pulse:
CW, Pulse
Frequency:
1 to 650 MHz
Power:
59.03 dBm
Package Type:
Flanged
Power(W):
800 W
Supply Voltage:
30 to 65 V
more info
Description:HIGH EFFICIENCY HETEROJUNCTION POWER FET CHIP (.3 µm x 800 µm)
Application Industry:
Test & Measurement, Aerospace & Defence, Commercia...
Transistor Type:
MESFET
Technology:
GaAs
CW/Pulse:
CW
Frequency:
DC to 26.5 GHz
Power:
26 dBm
Package Type:
Chip
Power(W):
0.4 W
Gain:
7.3 to 11.2 dB
Supply Voltage:
6 to 8 V
more info
MRF6V13250HS Image
Description:Lateral N-Channel RF Power MOSFET, 1300 MHz, 250 W, 50 V
Application Industry:
Aerospace & Defence, Avionics
Transistor Type:
LDMOS
Technology:
Si
CW/Pulse:
Pulse, CW
Frequency:
960 MHz to 1.5 GHz
Power:
53.98 dBm
Package Type:
Flanged
Power(W):
250.03 W
Supply Voltage:
50 V
Package:
CASE 465A--06, STYLE 1 NI--780S
more info
Description:DC to 20 GHz, HEMT Transistor
Application Industry:
Wireless Infrastructure, Aerospace & Defence, Broa...
Transistor Type:
HEMT
Technology:
InGaAs
CW/Pulse:
CW
Frequency:
DC to 20 GHz
Package Type:
Flanged
Gain:
11.5 to 13.5 dB
Supply Voltage:
2 V
more info
Description:RF Heterojunction Bipolar Transistor with 45 GHz Ft
Application Industry:
SATCOM, GNSS, Broadcast, Wireless Communication
Transistor Type:
HBT
Technology:
SiGe
Frequency:
Up to 75 GHz
Power:
6.5 to 8 dBm
Package Type:
Flanged
Power(W):
0.0045 to 0.0063 W
Supply Voltage:
3 V
more info
Description:1000 W Si-Enhancement Mode Transistor from 1030 to 1090 MHz
Application Industry:
Aerospace & Defence
Transistor Type:
MOSFET
Technology:
Si
CW/Pulse:
Pulse
Frequency:
1.03 to 1.09 GHz
Power:
60 dBm
Package Type:
Flanged
Power(W):
1000 W
Gain:
15.5 dB
Supply Voltage:
50 V
more info
Description:195 W, GaN on SiC OptiGaN HEMT from 2580 to 2630 MHz for 4G LTE & Open RAN Applications
Application Industry:
Cellular, Wireless Infrastructure, Broadcast, Base...
Transistor Type:
HEMT
Technology:
GaN on SiC
CW/Pulse:
CW
Frequency:
2580 to 2630 MHz
Power:
45.05 dBm
Package Type:
Surface Mount, Flanged
Power(W):
32 W
Gain:
14.4 dB
Supply Voltage:
48 V
more info
Description:1.030 to 1.090 GHz, HEMT Transistor
Application Industry:
Aerospace & Defence, Avionics
Transistor Type:
HEMT
Technology:
GaN on SiC, GaN
CW/Pulse:
Pulse
Frequency:
1.030 to 1.090 GHz
Power:
57.78 dBm
Package Type:
Flanged
Power(W):
599.79 W
Gain:
16 dB
Supply Voltage:
50 V
Package:
Ceramic
more info
Description:GaN on SiC, GaN HEMT from 9.2 to 10.5 GHz
Application Industry:
Radar, Wireless Infrastructure
Transistor Type:
HEMT
Technology:
GaN on SiC, GaN
CW/Pulse:
Pulse
Frequency:
9.2 to 10.5 GHz
Power:
51.5 to 53.5 dBm
Package Type:
Flanged
Power(W):
141.25 to 223.87 W
Gain:
7.5 to 9.5 dB
Supply Voltage:
50 V
more info

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