RF Transistors - Page 17

2357 RF Transistors from 26 Manufacturers meet your specification.
Description:174 W GaN Asymmetrical Doherty RF Transistor from 3400 to 3800 MHz
Application Industry:
Cellular, Wireless Infrastructure, Broadcast, Base...
Transistor Type:
HEMT
Technology:
GaN on SiC
CW/Pulse:
CW
Frequency:
3400 to 3800 MHz
Power:
44.15 dBm
Package Type:
Surface Mount, Flanged
Power(W):
26 W
Gain:
14.1 dB
Supply Voltage:
48 V
more info
MRF6V10010N Image
Description:Pulsed Lateral N-Channel RF Power MOSFET, 1090 MHz, 10 W, 50 V
Application Industry:
Aerospace & Defence, Radar, Avionics
Transistor Type:
LDMOS
Technology:
Si
CW/Pulse:
Pulse
Frequency:
960 MHz to 1.4 GHz
Power:
33.01 dBm
Package Type:
Surface Mount
Power(W):
2 W
Supply Voltage:
50 V
Package:
CASE 466--03, STYLE 1 PLD--1.5 PLASTIC
more info
Description:175 to 530 MHz, MOSFET Transistor
Application Industry:
Wireless Infrastructure, Broadcast
Transistor Type:
MOSFET
Technology:
Si
CW/Pulse:
CW
Frequency:
175 to 530 MHz
Power:
48.75 to 49.24 dBm
Package Type:
Flanged
Power(W):
83.95 W
Supply Voltage:
12.5 V
more info
Description:High Linearity, Low Profile Silicon NPN RF Bipolar Transistor
Application Industry:
SATCOM, Broadcast, GNSS, Wireless Infrastructure
Transistor Type:
Bipolar
Technology:
SiGe
Frequency:
42 GHz
Power:
23.5 to 28 dBm
Package Type:
Surface Mount
Power(W):
0.22 to 0.63 W
Gain:
12.5 to 33 dB
Package:
TSFP-4-1
more info
Description:600W L-Band High Power Pulsed Transistor from 1030 to 1090 MHz
Application Industry:
Aerospace & Defence
Transistor Type:
MOSFET
Technology:
Si
CW/Pulse:
Pulse
Frequency:
1.03 to 1.09 GHz
Power:
57.78 to 58.45 dBm
Package Type:
Flanged
Power(W):
600 to 715 W
Gain:
18 dB
Supply Voltage:
50 V
more info
Description:28.2 W, GaN on SiC OptiGaN HEMT from 1800 to 2700 MHz for 4G LTE & Open RAN Applications
Application Industry:
Cellular, Wireless Infrastructure, Broadcast, Base...
Transistor Type:
HEMT
Technology:
GaN on SiC
CW/Pulse:
CW
Frequency:
1800 to 2700 MHz
Power:
33.01 dBm
Package Type:
Surface Mount, Flanged
Power(W):
2 W
Gain:
17.9 dB
Supply Voltage:
48 V
more info
Description:1200 to 1400 MHz, 10.6 dB Bipolar Transistor
Application Industry:
Radar
Transistor Type:
Bipolar
Technology:
Si
CW/Pulse:
Pulse
Frequency:
1.2 to 1.4 GHz
Power:
45.05 to 49.02 dBm
Package Type:
Flanged
Power(W):
79.8 W
Gain:
10.6 dB
Supply Voltage:
40 V
Package:
Ceramic
more info
Description:GaAs FET from 5.0 to 5.3 GHz
Application Industry:
Communication, Wireless Infrastructure
Transistor Type:
FET
Technology:
GaAs
Frequency:
5.0 to 5.3 GHz
Power:
38.5 to 39.5 dBm
Package Type:
Flanged
Power(W):
7.08 to 8.91 W
Package:
IK
more info
Description:25 W, GaN HEMT Transistor from DC to 6 GHz
Application Industry:
Test & Measurement, Radar
Transistor Type:
HEMT
Technology:
GaN on SiC, GaN
CW/Pulse:
CW, Pulse
Frequency:
DC to 6 GHz
Power:
43.98 dBm
Package Type:
Flanged
Power(W):
25 W
Supply Voltage:
48 V
Package:
680B
more info
PD84001 Image
Description:1.25 W, LDMOS RF Transistor from 800 to 920 MHz
Application Industry:
Broadcast, Commercial, Wireless Infrastructure
Transistor Type:
LDMOS
Technology:
Si
CW/Pulse:
CW
Frequency:
800 to 920 MHz
Power:
30 to 31 dBm
Power(W):
1 to 1.25 W
Supply Voltage:
7.5 V
more info
WG60014SD Image
Description:14 W, GaN on SiC Power Transistor from DC to 6 GHz
Application Industry:
Aerospace & Defence, Broadcast, Wireless Infrastru...
Transistor Type:
HEMT
Technology:
GaN on SiC, GaN
CW/Pulse:
CW
Frequency:
DC to 6 GHz
Power:
41.46 dBm
Package Type:
Surface Mount
Power(W):
14 W
Supply Voltage:
28 V
more info

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