RF Transistors - Page 19

2357 RF Transistors from 26 Manufacturers meet your specification.
Description:316 W, GaN on SiC OptiGaN HEMT from 2496 to 2690 MHz for 4G LTE & Open RAN Applications
Application Industry:
Cellular, Wireless Infrastructure, Broadcast, Base...
Transistor Type:
HEMT
Technology:
GaN on SiC
CW/Pulse:
CW
Frequency:
2496 to 2690 MHz
Power:
46.02 dBm
Package Type:
Surface Mount, Flanged
Power(W):
40 W
Gain:
14.5 dB
Supply Voltage:
48 V
more info
Description:2 W GaN HEMT from DC to 26 GHz
Application Industry:
Test & Measurement, Commercial, Military
Transistor Type:
HEMT
Technology:
GaN on SiC, GaN
CW/Pulse:
CW
Frequency:
DC to 26 GHz
Power:
33.5 dBm
Package Type:
Chip
Power(W):
2 W
Supply Voltage:
28 V
more info
MRF6V12250H Image
Description:Pulsed Lateral N-Channel RF Power MOSFET, 960-1215 MHz, 275 W, 50 V
Application Industry:
Aerospace & Defence, Avionics
Transistor Type:
LDMOS
Technology:
Si
CW/Pulse:
Pulse
Frequency:
960 MHz to 1.215 GHz
Power:
44.39 dBm
Package Type:
Flanged
Power(W):
27.48 W
Supply Voltage:
50 V
Package:
CASE 465--06, STYLE 1 NI--780
more info
Description:175 to 530 MHz, MOSFET Transistor
Application Industry:
Wireless Infrastructure, Broadcast
Transistor Type:
MOSFET
Technology:
Si
CW/Pulse:
CW
Frequency:
175 to 530 MHz
Power:
45.44 dBm
Package Type:
Flanged
Power(W):
34.99 W
Supply Voltage:
12.5 V
more info
Description:240 W, GaN on SiC OptiGaN HEMT from 2300 to 2400 MHz for 4G LTE & Open RAN Applications
Application Industry:
Cellular, Wireless Infrastructure, Broadcast, Base...
Transistor Type:
HEMT
Technology:
GaN on SiC
CW/Pulse:
CW
Frequency:
2300 to 2400 MHz
Power:
46.02 dBm
Package Type:
Surface Mount, Flanged
Power(W):
40 W
Gain:
15.3 dB
Supply Voltage:
48 V
more info
Description:2.90 to 3.15 GHz, HEMT Transistor
Application Industry:
Radar
Transistor Type:
HEMT
Technology:
GaN on SiC, GaN
CW/Pulse:
Pulse
Frequency:
2.90 to 3.15 GHz
Power:
48.75 to 53.01 dBm
Package Type:
Flanged
Power(W):
199.99 W
Gain:
13.3 dB
Supply Voltage:
45 V
Package:
Ceramic
more info
Description:GaAs FET from 14.0 to 14.5 GHz
Application Industry:
Communication, Wireless Infrastructure
Transistor Type:
FET
Technology:
GaAs
Frequency:
14.0 to 14.5 GHz
Power:
39.5 to 40.5 dBm
Package Type:
Flanged
Power(W):
8.91 to 11.22 W
more info
Description:10 W, GaN HEMT Transistor from 7.9 to 8.4 GHz
Application Industry:
SATCOM, Radar, Broadcast
Transistor Type:
HEMT
Technology:
GaN on SiC, GaN
CW/Pulse:
CW, Pulse
Frequency:
7.9 to 8.4 GHz
Power:
40 dBm
Package Type:
Flanged
Power(W):
10 W
Supply Voltage:
28 V
Package:
680B
more info
RF2L27015CG2 Image
Description:15 W, LDMOS RF Transistor from 700 MHz to 2.7 GHz
Transistor Type:
LDMOS
Technology:
Si
CW/Pulse:
CW, Pulse
Frequency:
700 MHz to 2.7 GHz
Power:
41.76 dBm
Package Type:
Flanged
Power(W):
15 W
Supply Voltage:
28 V
more info
WG60002SF/P Image
Description:2 W, GaN on SiC Power Transistor from DC to 6 GHz
Application Industry:
Aerospace & Defence, Broadcast, Wireless Infrastru...
Transistor Type:
HEMT
Technology:
GaN on SiC, GaN
CW/Pulse:
CW
Frequency:
DC to 6 GHz
Power:
33.01 dBm
Package Type:
Flanged
Power(W):
2 W
Supply Voltage:
28 V
more info
Description:HiFET High Voltage GaAs FET DC-12 GHz
Application Industry:
Wireless Infrastructure, Radar, Broadcast
Transistor Type:
FET
Technology:
GaAs
CW/Pulse:
CW
Frequency:
DC to 12 GHz
Power:
30 dBm
Package Type:
Flanged
Power(W):
1 W
Supply Voltage:
28 V
Package:
Ceramic
more info

FiltersReset All

Application Industry

Transistor Type

Technology

CW/Pulse

Frequency

 
 
Apply

Power (dBm)

Apply

Power(W)

Apply

Gain (dB)

Apply

Supply Voltage (V)

Apply

Package Type