RF Transistors - Page 19

2359 RF Transistors from 26 Manufacturers meet your specification.
Description:316 W, GaN on SiC OptiGaN HEMT from 2520 to 2630 MHz for 4G LTE & Open RAN Applications
Application Industry:
Cellular, Wireless Infrastructure, Broadcast, Base...
Transistor Type:
HEMT
Technology:
GaN on SiC
CW/Pulse:
CW
Frequency:
2520 to 2630 MHz
Power:
46.02 dBm
Package Type:
Surface Mount, Flanged
Power(W):
40 W
Gain:
14.4 dB
Supply Voltage:
48 V
more info
Description:5.2 to 5.9 GHz GaN MMIC for Radar Power Amplifiers
Application Industry:
Radar, Aerospace & Defence
Transistor Type:
HEMT
Technology:
GaN on SiC, GaN
CW/Pulse:
Pulse
Frequency:
5.2 to 5.9 GHz
Power:
45.68 dBm
Package Type:
Flanged
Power(W):
37 W
Supply Voltage:
28 V
more info
Description:2500 W Pulsed LDMOS Power Transistor from 1 to 400 MHz
Application Industry:
Wireless Infrastructure, ISM, Broadcast, Cellular
Transistor Type:
LDMOS
CW/Pulse:
CW, Pulse
Frequency:
1 to 400 MHz
Package Type:
Flanged
Supply Voltage:
75 V
more info
Description:HIGH EFFICIENCY HETEROJUNCTION POWER FET CHIP (.25µm x 600µm)
Application Industry:
Test & Measurement, Aerospace & Defence, Commercia...
Transistor Type:
pHEMT
Technology:
GaAs
CW/Pulse:
CW
Frequency:
DC to 26.5 GHz
Power:
27.5 dBm
Package Type:
Chip
Power(W):
0.56 W
Gain:
7.5 to 12 dB
Supply Voltage:
8 V
more info
A2T07D160W04S Image
Description:Airfast RF Power LDMOS Transistor, 710-960 MHz, 160 W Avg., 28 V
Application Industry:
Wireless Infrastructure
Transistor Type:
LDMOS
Technology:
Si
CW/Pulse:
Pulse, CW
Frequency:
716 to 960 MHz
Power:
44.77 dBm
Package Type:
Flanged
Power(W):
29.99 W
Supply Voltage:
28 V
Package:
NI--780S--4L
more info
Description:100W GaN HEMT for Satellite Earth Stations
Application Industry:
SATCOM
Transistor Type:
HEMT
Technology:
GaN on SiC, GaN
Frequency:
13.75 to 14.5 GHz
Power:
50 dBm
Package Type:
Flanged
Power(W):
100 W
Gain:
10 dB
more info
Description:195 W Surface-Mount GaN Power Transistor from 1880 to 2025 MHz
Application Industry:
Cellular, Wireless Infrastructure, Broadcast, Base...
Transistor Type:
HEMT
Technology:
GaN on SiC
CW/Pulse:
CW
Frequency:
1880 to 2025 MHz
Power:
45.05 dBm
Package Type:
Surface Mount, Flanged
Power(W):
32 W
Gain:
16.9 dB
Supply Voltage:
48 V
more info
Description:3100 to 3500 MHz, 10.4 dB LDMOS Transistor
Application Industry:
Radar
Transistor Type:
LDMOS
Technology:
Si
CW/Pulse:
Pulse
Frequency:
3.1 to 3.5 GHz
Power:
34.77 dBm
Package Type:
Flanged
Power(W):
3 W
Gain:
10.4 dB
Supply Voltage:
32 V
Package:
Ceramic
more info
Description:GaN on SiC, GaN HEMT from 2.7 GHz
Transistor Type:
HEMT
Technology:
GaN on SiC, GaN
CW/Pulse:
CW
Frequency:
2.7 GHz
Power:
45.5 to 46.5 dBm
Package Type:
Flanged
Power(W):
35.48 to 44.66 W
Gain:
15 to 16 dB
Supply Voltage:
50 V
more info
Description:25 W, GaN HEMT Transistor from DC to 6 GHz
Application Industry:
Test & Measurement, Radar
Transistor Type:
HEMT
Technology:
GaN on SiC, GaN
CW/Pulse:
CW, Pulse
Frequency:
DC to 6 GHz
Power:
43.98 dBm
Package Type:
Flanged
Power(W):
25 W
Supply Voltage:
48 V
Package:
680B
more info
PD54003-E Image
Description:3 W, LDMOS / MOSFET RF Transistor from 480 to 520 MHz
Application Industry:
Broadcast, Commercial, Wireless Infrastructure
Transistor Type:
LDMOS
Technology:
Si
CW/Pulse:
CW
Frequency:
480 to 520 MHz
Power:
34.77 dBm
Package Type:
Surface Mount
Power(W):
3 W
Supply Voltage:
7.5 to 9.5 V
more info

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