RF Transistors - Page 18

2360 RF Transistors from 26 Manufacturers meet your specification.
Description:170 W GaN-on-SiC Transistor from 1880 to 2025 MHz
Application Industry:
Cellular, Wireless Infrastructure, Broadcast, Base...
Transistor Type:
HEMT
Technology:
GaN on SiC
CW/Pulse:
CW
Frequency:
1880 to 2025 MHz
Power:
44.77 dBm
Package Type:
Surface Mount, Flanged
Power(W):
30 W
Gain:
17 dB
Supply Voltage:
48 V
more info
Description:25 W, GaN HEMT Transistor from DC to 6 GHz
Application Industry:
Test & Measurement, Radar
Transistor Type:
HEMT
Technology:
GaN on SiC, GaN
CW/Pulse:
CW, Pulse
Frequency:
DC to 6 GHz
Power:
43.98 dBm
Package Type:
Flanged
Power(W):
25 W
Supply Voltage:
48 V
Package:
680B
more info
SD57045 Image
Description:45 W, LDMOS / FET RF Transistor from 925 to 965 MHz
Application Industry:
Wireless Infrastructure, Commercial
Transistor Type:
LDMOS
Technology:
Si
CW/Pulse:
CW
Frequency:
925 to 965 MHz
Power:
46.53 dBm
Package Type:
Flanged
Power(W):
45 W
Supply Voltage:
28 V
more info
WG60014SD Image
Description:14 W, GaN on SiC Power Transistor from DC to 6 GHz
Application Industry:
Aerospace & Defence, Broadcast, Wireless Infrastru...
Transistor Type:
HEMT
Technology:
GaN on SiC, GaN
CW/Pulse:
CW
Frequency:
DC to 6 GHz
Power:
41.46 dBm
Package Type:
Surface Mount
Power(W):
14 W
Supply Voltage:
28 V
more info
Description:Ceramic Packaged GaAs Power pHEMT DC-10 GHz
Application Industry:
Wireless Infrastructure, Radar, Broadcast
Transistor Type:
pHEMT
Technology:
GaAs
CW/Pulse:
CW
Frequency:
DC to 10 GHz
Power:
35.5 dBm
Package Type:
Flanged
Power(W):
3.55 W
Supply Voltage:
28 V
Package:
Ceramic
more info
Description:25 W, Si VDMOS Power Transistor
Application Industry:
Aerospace & Defence, Broadcast, Wireless Infrastru...
Transistor Type:
VDMOS
Technology:
Si
Frequency:
1 to 500 MHz
Power:
43 dBm
Package Type:
Flanged
Power(W):
25 W
more info
Description:15 W GaN HEMT from DC to 6 GHz
Application Industry:
Wireless Infrastructure, Radar
Transistor Type:
HEMT
Technology:
GaN
CW/Pulse:
CW, Pulse
Frequency:
DC to 6 GHz
Power:
41.7 dBm
Package Type:
Flanged
Power(W):
15 W
Gain:
14 dB
Supply Voltage:
50 V
Package:
3 Lead hermetic Ceramic-Metal Flange Package
more info
Description:SC-70 (SOT-343) Low Noise 31.5 dBm OIP3
Application Industry:
Wireless Infrastructure
Transistor Type:
pHEMT
Technology:
GaAs
CW/Pulse:
CW
Frequency:
450 MHz to 10 GHz
Power:
20 dBm
Package Type:
Surface Mount
Power(W):
0.1 W
Supply Voltage:
4 V
Package:
SOT-343
more info
Description:150 W Linear/Pulsed GaN HEMT from DC to 3.2 GHz
Application Industry:
Communication, Radar, Test & Measurement, Wireless...
Transistor Type:
HEMT
Technology:
GaN on SiC
CW/Pulse:
Pulse
Frequency:
DC to 3.2 GHz
Package Type:
Surface Mount
Gain:
13.5 to 18.7 dB
Supply Voltage:
50 V
Package:
DFN
more info
Description:125 W, GaN Transistor from 1030 to 1090 MHz
Application Industry:
Avionics
Technology:
GaN
CW/Pulse:
CW
Frequency:
1030 to 1090 MHz
Power:
50.96 dBm
Package Type:
Ceramic
Power(W):
125 W
Supply Voltage:
50 V
more info
Description:DC to 18 GHz, HEMT Transistor
Application Industry:
Aerospace & Defence, Wireless Infrastructure, Wire...
Transistor Type:
HEMT
Technology:
GaN on SiC, GaN
CW/Pulse:
Pulse, CW
Frequency:
DC to 18 GHz
Power:
40.1 dBm
Package Type:
Die
Power(W):
10.23 W
Gain:
21 dB
Supply Voltage:
12 to 40 V
more info

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