RF Transistors - Page 18

2357 RF Transistors from 26 Manufacturers meet your specification.
Description:220 W, GaN on SiC OptiGaN HEMT from 1805 to 1880 MHz for 4G LTE & Open RAN Applications
Application Industry:
Cellular, Wireless Infrastructure, Broadcast, Base...
Transistor Type:
HEMT
Technology:
GaN on SiC
CW/Pulse:
CW
Frequency:
1805 to 1880 MHz
Power:
46.53 dBm
Package Type:
Surface Mount, Flanged
Power(W):
45 W
Gain:
15.8 dB
Supply Voltage:
48 V
more info
Description:Ceramic Packaged GaAs Power pHEMT DC-10 GHz
Application Industry:
Wireless Infrastructure, Radar, Broadcast
Transistor Type:
pHEMT
Technology:
GaAs
CW/Pulse:
CW
Frequency:
DC to 10 GHz
Power:
35.5 dBm
Package Type:
Flanged
Power(W):
3.55 W
Supply Voltage:
28 V
Package:
Ceramic
more info
Description:300 W, Si VDMOS Power Transistor
Application Industry:
Aerospace & Defence, Broadcast, Wireless Infrastru...
Transistor Type:
VDMOS
Technology:
Si
Frequency:
1 to 175 MHz
Power:
54 dBm
Package Type:
Flanged
Power(W):
300 W
more info
Description:1.2 to 1.4 GHz Low Noise GaN on SiC HEMT
Application Industry:
Radar, Wireless Infrastructure
Transistor Type:
HEMT
Technology:
GaN on SiC, GaN
CW/Pulse:
Pulse, CW
Frequency:
1.2 to 1.4 GHz
Power:
41.76 dBm
Package Type:
Surface Mount
Power(W):
15 W
Supply Voltage:
45 V
more info
Description:Single Voltage E-pHEMT Low Noise 45 dBm OIP3 in SOT-89 package
Application Industry:
Wireless Infrastructure
Transistor Type:
E-pHEMT
Technology:
GaAs
CW/Pulse:
CW
Frequency:
400 MHz to 3.9 GHz
Power:
29 dBm
Package Type:
Surface Mount
Power(W):
0.79 W
Supply Voltage:
4.5 V
Package:
SOT-89
more info
Description:RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS
Application Industry:
Aerospace & Defence
Transistor Type:
Bipolar
Technology:
Si
CW/Pulse:
CW
Frequency:
DC to 1.2 GHz
Package Type:
Through Hole
Gain:
12 to 12.4 dB
Supply Voltage:
6 V
Package:
TO-72
more info
Description:AlGaAs/InGaAs pHEMT Transistor Die from DC to 18 GHz
Application Industry:
Commercial, Military, Space, Wireless Infrastructu...
Transistor Type:
pHEMT
Technology:
AlGaAs/InGaAs
CW/Pulse:
CW
Frequency:
DC to 18 GHz
Power:
28 dBm
Package Type:
Chip
Power(W):
0.63 W
Supply Voltage:
2.5 to 8 V
more info
Description:80 W, GaN on SiC HEMT from DC to 3.2 GHz
Application Industry:
Radar, Test & Measurement, Communication, Wireless...
Transistor Type:
HEMT
Technology:
GaN, GaN on SiC
CW/Pulse:
CW, Pulse
Frequency:
DC to 3.2 GHz
Power:
49.03 dBm
Package Type:
Surface Mount
Power(W):
79.98 W
Gain:
15.1 to 17.2 dB
Supply Voltage:
50 V
Package:
DFN
more info
Description:7.2 W GaN RF Transistor from DC to 25 GHz
Application Industry:
Aerospace & Defence, Wireless Infrastructure, Wire...
Transistor Type:
HEMT
Technology:
GaN on SiC, GaN
CW/Pulse:
Pulse, CW
Frequency:
DC to 25 GHz
Power:
38.45 dBm
Package Type:
Die
Power(W):
7 W
Gain:
15 dB
Supply Voltage:
12 to 29.5 V
Package:
0.83 x 0.55 x 0.10 mm
more info
Description:Si Based TMOS Transistor
Application Industry:
Aerospace & Defence, Radar, ISM, Avionics
Transistor Type:
MOSFET
Technology:
Si
CW/Pulse:
CW
Frequency:
5 to 500 MHz
Power:
33.01 dBm
Package Type:
Flanged
Power(W):
2 W
Gain:
16 dB
Supply Voltage:
28 V
Package:
Flange Ceramic
more info
Description:53.98 dBm (250 W), LDMOS Transistor from 1200 to 1400 MHz
Application Industry:
Radar, Wireless Infrastructure
Transistor Type:
LDMOS
Technology:
Si
CW/Pulse:
Pulse
Frequency:
1.2 to 1.4 GHz
Power:
53.98 dBm
Package Type:
Surface Mount
Power(W):
250.03 W
Supply Voltage:
50 V
Package:
SOT502B
more info

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