RF Transistors - Page 30

2357 RF Transistors from 26 Manufacturers meet your specification.
Description:GaN on SiC HEMT from 1805 to 1880 MHz
Application Industry:
Cellular, Wireless Infrastructure
Transistor Type:
HEMT
Technology:
GaN on SiC
CW/Pulse:
Pulse
Frequency:
1805 to 1880 MHz
Power:
48.97 to 56.7 dBm
Package Type:
Flanged
Power(W):
79 to 468 W
Gain:
13.5 to 14 dB
Supply Voltage:
55 V
Package:
RF24010DKR3
more info
Description:4 W, Si VDMOS Power Transistor
Application Industry:
Aerospace & Defence, Broadcast, Wireless Infrastru...
Transistor Type:
VDMOS
Technology:
Si
Frequency:
1 to 1000 MHz
Power:
36 dBm
Package Type:
Flanged
Power(W):
4 W
more info
Description:DC to 8 GHz Low Noise GaN on SiC HEMT
Application Industry:
Radar, Wireless Infrastructure
Transistor Type:
HEMT
Technology:
GaN on SiC, GaN
CW/Pulse:
Pulse, CW
Frequency:
DC to 8 GHz
Power:
49.29 dBm
Package Type:
Die, Chip
Power(W):
85 W
Supply Voltage:
30 V
more info
Description:Single Voltage E-pHEMT Low Noise 42 dBm OIP3 in LPCC
Application Industry:
Wireless Infrastructure
Transistor Type:
E-pHEMT
Technology:
GaAs
CW/Pulse:
CW
Frequency:
0.05 to 6 GHz
Power:
26.5 dBm
Package Type:
Chip
Power(W):
0.45 W
Supply Voltage:
4.5 V
Package:
SMT 2x2
more info
Description:RF & MICROWAVE TRANSISTORS FM MOBILE APPLICATIONS
Application Industry:
Cellular, Broadcast
Transistor Type:
Bipolar
Technology:
Si
CW/Pulse:
CW
Frequency:
DC to 175 MHz
Power:
38.45 dBm
Package Type:
Screw Mount, Flanged
Power(W):
7 W
Supply Voltage:
12.5 V
Package:
M135
more info
Description:GaAs MESFET from 0.5 to 26 GHz for Commercial and Military Applications
Application Industry:
Commercial, Military, Space, Wireless Infrastructu...
Transistor Type:
FET
Technology:
GaAs
CW/Pulse:
CW
Frequency:
DC to 26 GHz
Power:
21 dBm
Package Type:
Chip
Power(W):
0.13 W
Gain:
8 dB
Supply Voltage:
4 to 7 V
more info
Description:110 W CW/Pulsed GaN HEMT from DC to 3.7 GHz
Application Industry:
Communication, Radar, Test & Measurement, Wireless...
Transistor Type:
HEMT
Technology:
GaN on SiC
CW/Pulse:
CW, Pulse
Frequency:
DC to 3.7 GHz
Power:
50.4 dBm
Package Type:
Flanged
Gain:
15 to 23 dB
Supply Voltage:
50 V
Package:
NI-360 Ceramic Package
more info
Description:GaN-on-SiC HEMT Transistor from DC to 6 GHz
Application Industry:
Aerospace & Defence, Wireless Infrastructure
Transistor Type:
HEMT
Technology:
GaN on SiC, GaN
CW/Pulse:
Pulse, CW
Frequency:
DC to 6 GHz
Power:
45.4 dBm(Psat)
Package Type:
Surface Mount
Power(W):
34.7 W(Psat)
Gain:
17.7 to 18.8 dB (at 3dB Compression)
Supply Voltage:
48 V
Package:
20 Pin QFN Package
more info
Description:615 W Thermally Enhanced LDMOS FET from 730 to 960 MHz
Application Industry:
Wireless Infrastructure
Transistor Type:
LDMOS
Technology:
GaN on SiC
Frequency:
730 to 960 MHz
Power:
58 dBm (P3dB)
Package Type:
Surface Mount
Power(W):
615 W (P3dB)
Gain:
18.5 to 19 dB
Supply Voltage:
48 V
more info
Description:LDMOS 3-Stage Integrated Doherty MMIC Transistor from 3.4 to 3.8 GHz
Application Industry:
Wireless Infrastructure
Transistor Type:
LDMOS
Technology:
Si
CW/Pulse:
CW, Pulse
Frequency:
3.4 to 3.8 GHz
Power:
39 to 40 dBm (P3dB)
Package Type:
Surface Mount
Power(W):
7.94 to 10 W
Supply Voltage:
28 V
more info
Description:HIGH EFFICIENCY HETEROJUNCTION POWER FET CHIP (.3 µm x 1200 µm)
Application Industry:
Test & Measurement, Aerospace & Defence, Commercia...
Transistor Type:
MESFET
Technology:
GaAs
CW/Pulse:
CW
Frequency:
DC to 26.5 GHz
Power:
28 dBm
Package Type:
Chip
Power(W):
0.63 W
Gain:
7.2 to 11.2 dB
Supply Voltage:
6 to 8 V
more info

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