RF Transistors - Page 30

2359 RF Transistors from 26 Manufacturers meet your specification.
Description:GaN on SiC HEMT from 1805 to 1880 MHz
Application Industry:
Cellular, Wireless Infrastructure
Transistor Type:
HEMT
Technology:
GaN on SiC
CW/Pulse:
Pulse
Frequency:
1805 to 1880 MHz
Power:
48.97 to 56.7 dBm
Package Type:
Flanged
Power(W):
79 to 468 W
Gain:
13.5 to 14 dB
Supply Voltage:
55 V
Package:
RF24010DKR3
more info
WG60005SF/P Image
Description:5 W, GaN on SiC Power Transistor from DC to 6 GHz
Application Industry:
Aerospace & Defence, Broadcast, Wireless Infrastru...
Transistor Type:
HEMT
Technology:
GaN on SiC, GaN
CW/Pulse:
CW
Frequency:
DC to 6 GHz
Power:
36.98 dBm
Package Type:
Flanged
Power(W):
4.99 W
Supply Voltage:
50 V
more info
Description:Ceramic Packaged GaAs Power pHEMT DC-12 GHz
Application Industry:
Wireless Infrastructure, Radar, Broadcast
Transistor Type:
pHEMT
Technology:
GaAs
CW/Pulse:
CW
Frequency:
DC to 12 GHz
Power:
24.5 dBm
Package Type:
Flanged
Power(W):
0.28 W
Supply Voltage:
28 V
Package:
Ceramic
more info
Description:40 W, Si VDMOS Power Transistor
Application Industry:
Aerospace & Defence, Broadcast, Wireless Infrastru...
Transistor Type:
VDMOS
Technology:
Si
Frequency:
1 to 500 MHz
Power:
46 dBm
Package Type:
Flanged
Power(W):
40 W
more info
Description:1.2 to 1.4 GHz Low Noise GaN on SiC HEMT
Application Industry:
Radar, Wireless Infrastructure
Transistor Type:
HEMT
Technology:
GaN on SiC, GaN
CW/Pulse:
Pulse, CW
Frequency:
1.2 to 1.4 GHz
Power:
52.55 dBm
Package Type:
Flanged, Ceramic
Power(W):
180 W
Supply Voltage:
45 V
more info
Description:Single Voltage E-pHEMT Low Noise 45 dBm OIP3 in SOT-89 package
Application Industry:
Wireless Infrastructure
Transistor Type:
E-pHEMT
Technology:
GaAs
CW/Pulse:
CW
Frequency:
400 MHz to 3.9 GHz
Power:
29 dBm
Package Type:
Surface Mount
Power(W):
0.79 W
Supply Voltage:
4.5 V
Package:
SOT-89
more info
Description:30 GHz Low-Noise Quasi E-Mode pHEMT Transistor
Application Industry:
Commercial, Military, Space, Wireless Infrastructu...
Transistor Type:
FET
CW/Pulse:
CW
Frequency:
DC to 30 GHz
Power:
16 dBm
Package Type:
Chip
Power(W):
0.04 W
Gain:
10 to 13 dB
Supply Voltage:
4 V
more info
Description:110 W CW/Pulsed GaN HEMT from DC to 3.7 GHz
Application Industry:
Communication, Radar, Test & Measurement, Wireless...
Transistor Type:
HEMT
Technology:
GaN on SiC
CW/Pulse:
CW, Pulse
Frequency:
DC to 3.7 GHz
Power:
50.4 dBm
Package Type:
Flanged
Gain:
15 to 23 dB
Supply Voltage:
50 V
Package:
NI-360 Ceramic Package
more info
Description:RF & MICROWAVE TRANSISTORS HF SSB APPLICATIONS
Application Industry:
Wireless Infrastructure, Aerospace & Defence, Broa...
Transistor Type:
Bipolar
Technology:
Si
CW/Pulse:
CW
Frequency:
DC to 30 MHz
Power:
51.76 dBm
Package Type:
Screw Mount, Flanged
Power(W):
149.97 W
Supply Voltage:
50 V
Package:
M164
more info
Description:DC to 6 GHz, HEMT Transistor
Application Industry:
Wireless Infrastructure, Radar, Aerospace & Defenc...
Transistor Type:
HEMT
Technology:
GaN on SiC, GaN
CW/Pulse:
Pulse, CW
Frequency:
DC to 6 GHz
Power:
44.77 dBm
Package Type:
Flanged
Power(W):
29.99 W
Gain:
14 dB
Supply Voltage:
12 to 40 V
more info
Description:10 W Surface-Mount GaN HEMT from DC to 8 GHz
Application Industry:
Test & Measurement, Broadcast, Wireless Infrastruc...
Transistor Type:
HEMT
Technology:
GaN on SiC
CW/Pulse:
CW
Frequency:
DC to 8 GHz
Package Type:
Flanged
Supply Voltage:
28 V
more info

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