RF Transistors - Page 32

2357 RF Transistors from 26 Manufacturers meet your specification.
Description:GaN Power Transistor
Application Industry:
Wireless Infrastructure, Wireless Communication
Transistor Type:
HEMT
Technology:
GaN on SiC, GaN
CW/Pulse:
CW
Frequency:
2.11 to 2.17 GHz
Power:
49.29 dBm
Package Type:
Flanged
Power(W):
84.92 W
Gain:
20.7 dB
Supply Voltage:
48 V
Package:
NS-AS01
more info
Description:45 W, Si LDMOS Power Transistor
Application Industry:
Aerospace & Defence, Broadcast, Wireless Infrastru...
Transistor Type:
LDMOS
Technology:
Si
Frequency:
1 to 1000 MHz
Power:
46 dBm
Package Type:
Flanged
Power(W):
45 W
more info
Description:DC to 6 GHz Low Noise GaN on SiC HEMT
Application Industry:
Radar, Wireless Infrastructure
Transistor Type:
HEMT
Technology:
GaN on SiC, GaN
CW/Pulse:
Pulse, CW
Frequency:
DC to 6 GHz
Power:
41.76 dBm
Package Type:
Surface Mount
Power(W):
15 W
Gain:
18 to 20 dB
Supply Voltage:
50 V
more info
Description:Single Voltage E-pHEMT Low Noise 30.5 dBm OIP3 in SC-70
Application Industry:
Wireless Infrastructure
Transistor Type:
E-pHEMT
Technology:
GaAs
CW/Pulse:
CW
Frequency:
450 MHz to 6 GHz
Power:
19 dBm
Package Type:
Surface Mount
Power(W):
0.08 W
Supply Voltage:
3 V
Package:
SOT-343
more info
Description:3 Watts - 28 Volts, Class C Microwave 3000 MHz
Transistor Type:
Bipolar
Technology:
Si
CW/Pulse:
CW
Frequency:
DC to 3 GHz
Power:
34.77 dBm
Package Type:
2-Hole Flanged
Power(W):
3 W
Supply Voltage:
28 V
Package:
55BT-1
more info
Description:AlGaAs/InGaAs pHEMT for Military & Space Applications Up to 26 GHz
Application Industry:
Commercial, Military, Space, Wireless Infrastructu...
Transistor Type:
pHEMT
Technology:
AlGaAs/InGaAs
CW/Pulse:
CW
Frequency:
DC to 26 GHz
Power:
26.5 dBm
Package Type:
Chip
Power(W):
0.45 W
Supply Voltage:
2.5 to 8 V
more info
Description:135 W GaN on SiC HEMT from DC to 3.2 GHz
Application Industry:
Radar, Wireless Infrastructure
Transistor Type:
HEMT
Technology:
GaN, GaN on SiC
CW/Pulse:
CW, Pulse
Frequency:
DC to 3.2 GHz
Power:
52.15 dBm
Package Type:
Die
Power(W):
164.06 W
Gain:
15.4 to 20.2 dB
Supply Voltage:
50 V
more info
Description:75 W GAN Transistor from DC to 3.6 GHz
Application Industry:
Wireless Infrastructure
Transistor Type:
HEMT
Technology:
GaN on SiC, GaN
CW/Pulse:
Pulse, CW
Frequency:
DC to 3.6 GHz
Power:
49 dBm
Package Type:
Surface Mount
Power(W):
79.4 W
Gain:
3dB Compression 19.5 dB
Supply Voltage:
48 V
more info
Description:Si Based Bipolar Transistor
Application Industry:
Aerospace & Defence, ISM, Avionics
Transistor Type:
Bipolar
Technology:
Si
CW/Pulse:
Pulse
Frequency:
1.025 to 1.15 GHz
Power:
59.29 dBm
Package Type:
Flanged
Power(W):
849.18 W
Gain:
7.8 dB
Supply Voltage:
50 V
Package:
Flange Ceramic
more info
Description:50 W GaN Doherty Power Transistor from 2.3 to 2.69 GHz
Application Industry:
Wireless Infrastructure
Technology:
GaN
CW/Pulse:
CW
Frequency:
2300 to 2700 MHz
Power:
47 dBm
Package Type:
Surface Mount
Power(W):
50 W
more info
Description:HIGH EFFICIENCY HETEROJUNCTION POWER FET CHIP (.3 µm x 2400 µm)
Application Industry:
Test & Measurement, Aerospace & Defence, Commercia...
Transistor Type:
MESFET
Technology:
GaAs
CW/Pulse:
CW
Frequency:
DC to 26.5 GHz
Power:
30.8 dBm
Package Type:
Chip
Power(W):
1.2 W
Gain:
5.4 to 9.8 dB
Supply Voltage:
6 to 8 V
more info

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