RF Transistors - Page 32

2359 RF Transistors from 26 Manufacturers meet your specification.
Description:GaN Power Transistor
Application Industry:
Wireless Infrastructure, Wireless Communication
Transistor Type:
HEMT
Technology:
GaN on SiC, GaN
CW/Pulse:
CW
Frequency:
3.4 to 3.6 GHz
Power:
50.41 dBm
Package Type:
Flanged
Power(W):
109.9 W
Gain:
17.1 dB
Supply Voltage:
48 V
Package:
RF12001KR3
more info
WG35165S Image
Description:165 W, GaN on SiC Power transistor from 3.4 to 3.6 GHz
Application Industry:
Wireless Infrastructure
Transistor Type:
FET
Technology:
GaN on SiC, GaN
CW/Pulse:
CW
Frequency:
3.4 to 3.6 GHz
Power:
52.17 dBm
Package Type:
Flanged
Power(W):
164.82 W
Supply Voltage:
48 V
Package:
Flanged
more info
Description:HiFET High Voltage GaAs FET
Application Industry:
Wireless Infrastructure, Avionics
Transistor Type:
FET
Technology:
GaAs
CW/Pulse:
CW
Frequency:
DC to 3 GHz
Power:
31 dBm
Package Type:
Flanged
Power(W):
1.26 W
Supply Voltage:
28 to 32 V
Package:
Ceramic
more info
Description:40 W, Si LDMOS Power Transistor
Application Industry:
Aerospace & Defence, Broadcast, Wireless Infrastru...
Transistor Type:
LDMOS
Technology:
Si
Frequency:
1 to 400 MHz
Power:
46 dBm
Package Type:
Flanged
Power(W):
40 W
more info
Description:DC to 6 GHz Low Noise GaN on SiC HEMT
Application Industry:
Radar, Wireless Infrastructure
Transistor Type:
HEMT
Technology:
GaN on SiC, GaN
CW/Pulse:
Pulse, CW
Frequency:
DC to 6 GHz
Power:
41.76 dBm
Package Type:
Surface Mount
Power(W):
15 W
Gain:
18 to 20 dB
Supply Voltage:
50 V
more info
Description:Single Voltage E-pHEMT Low Noise 42 dBm OIP3 in SOT-89 package
Application Industry:
Wireless Infrastructure
Transistor Type:
E-pHEMT
Technology:
GaAs
CW/Pulse:
CW
Frequency:
0.05 to 6 GHz
Power:
27 dBm
Package Type:
Surface Mount
Power(W):
0.5 W
Supply Voltage:
4.5 V
Package:
SOT-89
more info
Description:AlGaAs/InGaAs pHEMT for Military & Space Applications Up to 26 GHz
Application Industry:
Commercial, Military, Space, Wireless Infrastructu...
Transistor Type:
pHEMT
Technology:
AlGaAs/InGaAs
CW/Pulse:
CW
Frequency:
DC to 26 GHz
Power:
25 dBm
Package Type:
Chip
Power(W):
0.32 W
Supply Voltage:
2.5 to 9 V
more info
Description:80 W, GaN on SiC HEMT from DC to 3.2 GHz
Application Industry:
Radar, Test & Measurement, Communication, Wireless...
Transistor Type:
HEMT
Technology:
GaN, GaN on SiC
CW/Pulse:
CW, Pulse
Frequency:
DC to 3.2 GHz
Power:
49.03 dBm
Package Type:
Surface Mount
Power(W):
79.98 W
Gain:
15.1 to 17.2 dB
Supply Voltage:
50 V
Package:
DFN
more info
Description:RF POWER VERTICAL MOSFET
Application Industry:
Aerospace & Defence, Commercial
Transistor Type:
MOSFET
Technology:
Si
CW/Pulse:
Pulse
Frequency:
DC to 175 MHz
Power:
51.76 dBm
Package Type:
Flanged
Power(W):
149.97 W
Supply Voltage:
50 V
Package:
M174
more info
Description:100 Watt GaN on SiC HEMT from DC to 3.5 GHz
Application Industry:
Wireless Infrastructure, Radar, Aerospace & Defenc...
Transistor Type:
HEMT
Technology:
GaN on SiC, GaN
CW/Pulse:
Pulse, CW
Frequency:
DC to 3.5 GHz
Power:
50 dBm
Package Type:
Flanged
Power(W):
100 W
Gain:
17.4 dB
Supply Voltage:
12 to 60 V
more info
Description:3.1 to 3.5 GHz GaN HEMT for S-Band Radar Power Amplifiers
Application Industry:
Radar, Aerospace & Defence
Transistor Type:
HEMT
Technology:
GaN on SiC, GaN
CW/Pulse:
Pulse
Frequency:
3.1 to 3.5 GHz
Power:
50.79 dBm
Package Type:
Flanged
Power(W):
120 W
Gain:
13 dB
Supply Voltage:
50 V
more info

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