RF Transistors - Page 35

2360 RF Transistors from 26 Manufacturers meet your specification.
RT12014P Image
Description:GaN Power Transistor
Application Industry:
Wireless Infrastructure, Wireless Communication
Transistor Type:
HEMT
Technology:
GaN on SiC, GaN
CW/Pulse:
CW
Frequency:
DC to 6 GHz
Power:
41.46 dBm
Package Type:
Flanged
Power(W):
14 W
Gain:
17.5 dB
Supply Voltage:
48 V
Package:
NS-CS01
more info
Description:43.98 dBm (25 W), LDMOS Transistor from 3400 to 3800 MHz
Application Industry:
Wireless Infrastructure, Wireless Communication
Transistor Type:
LDMOS
Technology:
Si
CW/Pulse:
Pulse, CW
Frequency:
3.4 to 3.8 GHz
Power:
43.97 dBm
Package Type:
Surface Mount
Power(W):
24.95 W
Supply Voltage:
28 V
Package:
SOT608A
more info
Description:HIGH EFFICIENCY HETEROJUNCTION POWER FET CHIP (.25µm x 1200µm)
Application Industry:
Test & Measurement, Aerospace & Defence, Commercia...
Transistor Type:
pHEMT
Technology:
GaAs
CW/Pulse:
CW
Frequency:
DC to 26 GHz
Power:
32 dBm
Package Type:
Chip
Power(W):
1.58 W
Gain:
8 to 12 dB
Supply Voltage:
8 V
more info
A2T27S020N Image
Description:AIRFAST RF POWER LDMOS TRANSISTORS 400-3800 MHz, 2.5 W AVG., 28 V
Application Industry:
Wireless Infrastructure
Transistor Type:
LDMOS
Technology:
Si
CW/Pulse:
CW
Frequency:
400 MHz to 2.7 GHz
Power:
33.98 dBm
Package Type:
Flanged
Power(W):
2.5 W
Supply Voltage:
28 V
Package:
TO--270--2 PLASTIC
more info
Description:175 to 530 MHz, MOSFET Transistor
Application Industry:
Wireless Infrastructure, Broadcast
Transistor Type:
MOSFET
Technology:
Si
CW/Pulse:
CW
Frequency:
175 to 530 MHz
Power:
46.53 dBm
Package Type:
Flanged
Power(W):
44.98 W
Supply Voltage:
12.5 V
more info
Description:1000 W Si-Enhancement Mode Transistor from 1030 to 1090 MHz
Application Industry:
Aerospace & Defence
Transistor Type:
MOSFET
Technology:
Si
CW/Pulse:
Pulse
Frequency:
1.03 to 1.09 GHz
Power:
60 dBm
Package Type:
Flanged
Power(W):
1000 W
Gain:
15.5 dB
Supply Voltage:
50 V
more info
Description:28.2 W, GaN on SiC OptiGaN HEMT from 1800 to 2700 MHz for 4G LTE & Open RAN Applications
Application Industry:
Cellular, Wireless Infrastructure, Broadcast, Base...
Transistor Type:
HEMT
Technology:
GaN on SiC
CW/Pulse:
CW
Frequency:
1800 to 2700 MHz
Power:
33.01 dBm
Package Type:
Surface Mount, Flanged
Power(W):
2 W
Gain:
17.9 dB
Supply Voltage:
48 V
more info
IGN1313S3600 Image
Description:3.2 kW, GaN RF Transistor from DC to 1.3 GHz
Technology:
GaN
CW/Pulse:
CW
Frequency:
DC to 1.3 GHz
Power:
65.05 dBm
Package Type:
2-Hole Flanged
Power(W):
3.2 kW
Supply Voltage:
100 V
more info
Description:GaAs FET from 2.6 GHz
Application Industry:
Wireless Infrastructure
Transistor Type:
FET
Technology:
GaAs
Frequency:
2.6 GHz
Power:
43 to 44.5 dBm
Package Type:
Flanged
Power(W):
19.95 to 28.18 W
Package:
IL
more info
Description:25 W, GaN HEMT Transistor from DC to 10 GHz
Application Industry:
Radar, Wireless Infrastructure
Transistor Type:
HEMT
Technology:
GaN on SiC, GaN
CW/Pulse:
CW, Pulse
Frequency:
DC to 10 GHz
Power:
43.98 dBm
Package Type:
Flanged
Power(W):
25 W
Supply Voltage:
28 V
more info
PD85035-E Image
Description:40 W, LDMOS / MOSFET RF Transistor operating at 870 MHz
Application Industry:
Broadcast, Commercial, Wireless Infrastructure
Transistor Type:
LDMOS
Technology:
Si
CW/Pulse:
CW
Frequency:
870 MHz
Power:
46.02 dBm
Package Type:
Surface Mount
Power(W):
35 to 40 W
Supply Voltage:
13.6 V
more info

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