RF Transistors - Page 35

2357 RF Transistors from 26 Manufacturers meet your specification.
Description:GaN Power Transistor
Application Industry:
Wireless Infrastructure, Wireless Communication
Transistor Type:
HEMT
Technology:
GaN on SiC, GaN
CW/Pulse:
CW
Frequency:
3.4 to 3.6 GHz
Power:
50.41 dBm
Package Type:
Flanged
Power(W):
109.9 W
Gain:
17.1 dB
Supply Voltage:
48 V
Package:
RF12001KR3
more info
AFT27S006N Image
Description:Airfast RF Power LDMOS Transistor, 728-2700 MHz, 28.8 dBm Avg., 28 V
Application Industry:
Wireless Infrastructure
Transistor Type:
LDMOS
Technology:
Si
CW/Pulse:
Pulse, CW
Frequency:
100 MHz to 3.6 GHz
Power:
28.8 dBm
Package Type:
Surface Mount
Power(W):
0.76 W
Supply Voltage:
28 V
Package:
PLD--1.5W PLASTIC
more info
MGFG5H3001 Image
Description:Ka-band GaN-HEMT MMIC for Satellite Earth Stations
Application Industry:
Aerospace & Defence, SATCOM
Transistor Type:
HEMT
Technology:
GaN on SiC, GaN
Frequency:
27.5 to 31 GHz
Power:
39 dBm
Package Type:
Flanged
Power(W):
8 W
Gain:
15 dB
more info
Description:960 MHz to 1.21 GHz, 800 W Transistor for Pulsed Avionics Applications
Application Industry:
Aerospace & Defence
Transistor Type:
MOSFET
Technology:
Si
CW/Pulse:
Pulse
Frequency:
960 MHz to 1.21 GHz
Power:
59.03 dBm
Package Type:
Flanged
Power(W):
800 W
Gain:
15.5 dB
Supply Voltage:
50 V
more info
Description:174 W GaN Asymmetrical Doherty RF Transistor from 3400 to 3800 MHz
Application Industry:
Cellular, Wireless Infrastructure, Broadcast, Base...
Transistor Type:
HEMT
Technology:
GaN on SiC
CW/Pulse:
CW
Frequency:
3400 to 3800 MHz
Power:
44.15 dBm
Package Type:
Surface Mount, Flanged
Power(W):
26 W
Gain:
14.1 dB
Supply Voltage:
48 V
more info
Description:3100 to 3500 MHz, 12 dB GaN Transistor
Application Industry:
Radar
Transistor Type:
HEMT
Technology:
GaN on SiC, GaN
CW/Pulse:
Pulse
Frequency:
3.1 to 3.5 GHz
Power:
51.3 dBm
Package Type:
Flanged
Power(W):
134.9 W
Gain:
12 dB
Supply Voltage:
50 V
Package:
Ceramic
more info
Description:GaN on SiC, GaN HEMT from 6.4 to 7.2 GHz
Application Industry:
SATCOM, Wireless Infrastructure, Broadcast
Transistor Type:
HEMT
Technology:
GaN on SiC, GaN
CW/Pulse:
CW
Frequency:
6.4 to 7.2 GHz
Power:
47 to 48 dBm
Package Type:
Flanged
Power(W):
50.12 to 63.1 W
Gain:
11 to 12 dB
Supply Voltage:
24 V
more info
Description:103 W, GaN HEMT Transistor from DC to 5 GHz
Application Industry:
Wireless Infrastructure, Test & Measurement, Radar
Transistor Type:
HEMT
Technology:
GaN on SiC, GaN
CW/Pulse:
CW, Pulse
Frequency:
DC to 5 GHz
Power:
50.13 dBm
Package Type:
Flanged
Power(W):
103.04 W
Supply Voltage:
48 V
more info
PD57045-E Image
Description:45 W, LDMOS / MOSFET RF Transistor from 925 to 960 MHz
Application Industry:
Wireless Infrastructure, Commercial
Transistor Type:
LDMOS
Technology:
Si
CW/Pulse:
CW
Frequency:
925 to 960 MHz
Power:
46.53 dBm
Package Type:
Surface Mount
Power(W):
45 W
Supply Voltage:
28 V
more info
WG60005SF/P Image
Description:5 W, GaN on SiC Power Transistor from DC to 6 GHz
Application Industry:
Aerospace & Defence, Broadcast, Wireless Infrastru...
Transistor Type:
HEMT
Technology:
GaN on SiC, GaN
CW/Pulse:
CW
Frequency:
DC to 6 GHz
Power:
36.98 dBm
Package Type:
Flanged
Power(W):
4.99 W
Supply Voltage:
50 V
more info
Description:HiFET High Voltage GaAs FET
Application Industry:
Wireless Infrastructure, Avionics
Transistor Type:
FET
Technology:
GaAs
CW/Pulse:
CW
Frequency:
DC to 6 GHz
Power:
39 dBm
Package Type:
Flanged
Power(W):
7.94 W
Supply Voltage:
8 to 16 V
Package:
Ceramic
more info

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