RF Transistors - Page 34

2357 RF Transistors from 26 Manufacturers meet your specification.
IE21385D Image
Description:GaN Power Transistor
Application Industry:
Wireless Infrastructure, Wireless Communication
Transistor Type:
HEMT
Technology:
GaN on SiC, GaN
CW/Pulse:
CW
Frequency:
2.11 to 2.17 GHz
Power:
55.85 dBm
Package Type:
Flanged
Power(W):
384.59 W
Gain:
14.6 dB
Supply Voltage:
48 V
Package:
RF24001DKR3
more info
Description:175 W, Si LDMOS Power Transistor
Application Industry:
Aerospace & Defence, Broadcast, Wireless Infrastru...
Transistor Type:
LDMOS
Technology:
Si
Frequency:
1 to 500 MHz
Power:
52 dBm
Package Type:
Flanged
Power(W):
175 W
more info
Description:65 W, GaN HEMT Transistor form 2.7 to 3.4 GHz
Application Industry:
Radar, Military, Commercial, Wireless Infrastructu...
Transistor Type:
HEMT
Technology:
GaN on SiC, GaN
CW/Pulse:
CW, Pulse
Frequency:
2.7 to 3.4 GHz
Power:
48.13 dBm
Package Type:
Surface Mount
Power(W):
65.01 W
Gain:
16 dB
Supply Voltage:
50 V
more info
Description:Single Voltage E-pHEMT Low Current Low Noise 24.2dBm OIP3 in SC-70
Application Industry:
Wireless Infrastructure
Transistor Type:
E-pHEMT
Technology:
GaAs
CW/Pulse:
CW
Frequency:
450 MHz to 6 GHz
Power:
14.4 dBm
Package Type:
Surface Mount
Power(W):
0.03 W
Supply Voltage:
2.7 V
Package:
SOT-343
more info
Description:100 Watts, 36 Volts, 200µs, 10% Radar 2700-3100 MHz
Application Industry:
Radar
Transistor Type:
Bipolar
Technology:
Si
CW/Pulse:
Pulse
Frequency:
2.7 to 3.1 GHz
Power:
50 to 51.46 dBm
Package Type:
Flanged
Power(W):
139.96 W
Supply Voltage:
36 V
Package:
55KS-1
more info
Description:GaAs FET for Military & Space Applications Up to 12 GHz
Application Industry:
Commercial, Military, Space, Wireless Infrastructu...
Transistor Type:
FET
Technology:
GaAs
CW/Pulse:
CW
Frequency:
DC to 12 GHz
Power:
26 dBm
Package Type:
Chip
Power(W):
0.4 W
Gain:
7 dB
Supply Voltage:
3 to 7 V
more info
Description:250 W, GaN on SiC HEMT from DC to 2.9 GHz
Application Industry:
Radar, Test & Measurement, Wireless Infrastructure
Transistor Type:
HEMT
Technology:
GaN on SiC
CW/Pulse:
CW, Pulse
Frequency:
DC to 2.9 GHz
Package Type:
Die
Gain:
18.6 dB
Supply Voltage:
50 V
more info
Description:5 Watt GaN HEMT from 4 GHz to 6 GHz
Application Industry:
Radar, ISM, Test & Measurement, Wireless Infrastru...
Transistor Type:
HEMT
Technology:
GaN on SiC, GaN
CW/Pulse:
Pulse, CW
Frequency:
4 to 6 GHz
Power:
36.99 dBm
Package Type:
Surface Mount
Power(W):
5 W
Gain:
12.7 dB
Supply Voltage:
32 V
Package:
3 x 3 mm
more info
Description:Si Based Bipolar Transistor
Application Industry:
Aerospace & Defence, ISM
Transistor Type:
Bipolar
Technology:
Si
CW/Pulse:
CW
Frequency:
30 to 500 MHz
Power:
50.97 dBm
Package Type:
Flanged
Power(W):
125.03 W
Gain:
10 dB
Supply Voltage:
28 V
Package:
Flange Ceramic
more info
Description:57.78 dBm (600 W), LDMOS Transistor from 10 to 500 MHz
Application Industry:
ISM, Wireless Infrastructure
Transistor Type:
LDMOS
Technology:
Si
CW/Pulse:
Pulse, CW
Frequency:
10 to 500 MHz
Power:
57.78 dBm
Package Type:
Surface Mount
Power(W):
599.79 W
Supply Voltage:
50 V
Package:
SOT1214B
more info
Description:HIGH EFFICIENCY HETEROJUNCTION POWER FET CHIP (.25µm x 800µm)
Application Industry:
Test & Measurement, Aerospace & Defence, Commercia...
Transistor Type:
pHEMT
Technology:
GaAs
CW/Pulse:
CW
Frequency:
1 to 27.5 GHz
Power:
30 dBm
Package Type:
Chip
Power(W):
1 W
Gain:
8.5 to 13 dB
Supply Voltage:
8 V
more info

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