RF Transistors - Page 34

2359 RF Transistors from 26 Manufacturers meet your specification.
Description:GaN Power Transistor
Application Industry:
Wireless Infrastructure, Wireless Communication
Transistor Type:
HEMT
Technology:
GaN on SiC, GaN
CW/Pulse:
CW
Frequency:
2.575 to 2.635 GHz
Power:
52.9 dBm
Package Type:
Flanged
Power(W):
194.98 W
Gain:
14.4 dB
Supply Voltage:
48 V
Package:
RF24001DKR3
more info
WG60005SD Image
Description:5 W, GaN on SiC Power Transistor from DC to 6 GHz
Application Industry:
Aerospace & Defence, Broadcast, Wireless Infrastru...
Transistor Type:
HEMT
Technology:
GaN on SiC, GaN
CW/Pulse:
CW
Frequency:
DC to 6 GHz
Power:
36.98 dBm
Package Type:
Surface Mount
Power(W):
4.99 W
Supply Voltage:
50 V
more info
Description:Ceramic Packaged GaAs Power pHEMT DC-12 GHz
Application Industry:
Wireless Infrastructure, Radar, Broadcast
Transistor Type:
pHEMT
Technology:
GaAs
CW/Pulse:
CW
Frequency:
DC to 12 GHz
Power:
28.5 dBm
Package Type:
Flanged
Power(W):
0.71 W
Supply Voltage:
28 V
Package:
Ceramic
more info
Description:90 W, Si VDMOS Power Transistor
Application Industry:
Aerospace & Defence, Broadcast, Wireless Infrastru...
Transistor Type:
VDMOS
Technology:
Si
Frequency:
1 to 500 MHz
Power:
49 dBm
Package Type:
Flanged
Power(W):
90 W
more info
Description:15 W GaN HEMT from DC to 6 GHz
Application Industry:
Wireless Infrastructure, Radar
Transistor Type:
HEMT
Technology:
GaN
CW/Pulse:
CW, Pulse
Frequency:
DC to 6 GHz
Power:
41.7 dBm
Package Type:
Flanged
Power(W):
15 W
Gain:
14 dB
Supply Voltage:
50 V
Package:
3 Lead hermetic Ceramic-Metal Flange Package
more info
Description:SC-70 (SOT-343) Low Noise 31.5 dBm OIP3
Application Industry:
Wireless Infrastructure
Transistor Type:
pHEMT
Technology:
GaAs
CW/Pulse:
CW
Frequency:
450 MHz to 10 GHz
Power:
20 dBm
Package Type:
Surface Mount
Power(W):
0.1 W
Supply Voltage:
4 V
Package:
SOT-343
more info
Description:AlGaAs/InGaAs pHEMT for Military & Space Applications Up to 26 GHz
Application Industry:
Commercial, Military, Space, Wireless Infrastructu...
Transistor Type:
pHEMT
Technology:
AlGaAs/InGaAs
CW/Pulse:
CW
Frequency:
DC to 26 GHz
Power:
24 dBm
Package Type:
Chip
Power(W):
0.25 W
Supply Voltage:
2.5 to 8 V
more info
Description:150 W Linear/Pulsed GaN HEMT from DC to 3.2 GHz
Application Industry:
Communication, Radar, Test & Measurement, Wireless...
Transistor Type:
HEMT
Technology:
GaN on SiC
CW/Pulse:
Pulse
Frequency:
DC to 3.2 GHz
Package Type:
Surface Mount
Gain:
13.5 to 18.7 dB
Supply Voltage:
50 V
Package:
DFN
more info
Description:RF POWER MOSFET FULL-BRIDGE
Application Industry:
ISM, Commercial
Transistor Type:
MOSFET
Technology:
Si
CW/Pulse:
Pulse
Frequency:
DC to 40 MHz
Power:
58.75 dBm
Package Type:
Die
Power(W):
749.89 W
Supply Voltage:
380 V
Package:
T1
more info
Description:30 MHz to 3.5 GHz GaN Transistor for CW and Pulse Applications
Application Industry:
Wireless Infrastructure, Radar, Aerospace & Defenc...
Transistor Type:
HEMT
Technology:
GaN on SiC, GaN
CW/Pulse:
Pulse, CW
Frequency:
30 MHz to 3.5 GHz
Power:
36.99 dBm
Package Type:
Surface Mount
Power(W):
5 W
Gain:
15.7 dB
Supply Voltage:
32 V
more info
Description:120-W, 2300 to 2700-MHz, GaN HEMT for WiMAX and LTE
Application Industry:
Wireless Infrastructure, Wireless Communication
Transistor Type:
HEMT
Technology:
GaN on SiC, GaN
CW/Pulse:
Pulse
Frequency:
2.3 to 2.7 GHz
Power:
51.13 dBm
Package Type:
Flanged
Power(W):
129.72 W
Supply Voltage:
50 V
more info

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