RF Transistors - Page 33

2359 RF Transistors from 26 Manufacturers meet your specification.
Description:GaN Power Transistor
Application Industry:
Wireless Infrastructure, Wireless Communication
Transistor Type:
HEMT
Technology:
GaN on SiC, GaN
CW/Pulse:
CW
Frequency:
DC to 6 GHz
Power:
47.4 dBm
Package Type:
Flanged
Power(W):
54.95 W
Gain:
15.7 dB
Supply Voltage:
48 V
Package:
NS-CS01
more info
Description:500 W GaN Asymmetric Doherty Power Transistor from 2.11 to 2.17 GHz
Application Industry:
Wireless Infrastructure
Technology:
GaN
CW/Pulse:
CW
Frequency:
2110 to 2170 MHz
Power:
57 dBm
Package Type:
Flanged
Power(W):
500 W
more info
Description:HIGH EFFICIENCY HETEROJUNCTION POWER FET CHIP (.25µm x 200µm)
Application Industry:
Test & Measurement, Aerospace & Defence, Commercia...
Transistor Type:
pHEMT
Technology:
GaAs
CW/Pulse:
CW
Frequency:
DC to 26.5 GHz
Power:
22 dBm
Package Type:
Chip
Power(W):
0.16 W
Gain:
9.5 to 14 dB
Supply Voltage:
8 V
more info
AFT23S160W02GS Image
Description:Airfast RF Power LDMOS Transistor, 2300-2400 MHz, 45 W Avg., 28 V
Application Industry:
Wireless Infrastructure
Transistor Type:
LDMOS
Technology:
Si
CW/Pulse:
Pulse, CW
Frequency:
2.3 to 2.4 GHz
Power:
46.53 dBm
Package Type:
Flanged
Power(W):
44.98 W
Supply Voltage:
28 V
Package:
NI-780GS-2L
more info
Description:DC to 2.4 GHz, HEMT Transistor
Application Industry:
Wireless Infrastructure, Aerospace & Defence, Broa...
Transistor Type:
HEMT
Technology:
InGaAs
CW/Pulse:
CW
Frequency:
DC to 2.4 GHz
Power:
16.5 dBm
Package Type:
Flanged
Power(W):
0.04 W
Gain:
15 dB
Supply Voltage:
3 V
more info
Description:1.02 to 1.5 GHz, 60 W Transistor for Pulsed Avionics Applications
Application Industry:
Aerospace & Defence
Transistor Type:
MOSFET
Technology:
Si
CW/Pulse:
Pulse
Frequency:
1.02 to 1.5 GHz
Power:
47.78 dBm
Package Type:
Flanged
Power(W):
60 W
Gain:
23 dB
Supply Voltage:
50 V
more info
Description:33.1 W, GaN on SiC OptiGaN HEMT from 2620 to 2690 MHz for 4G LTE & Open RAN Applications
Application Industry:
Cellular, Wireless Infrastructure, Broadcast, Base...
Transistor Type:
HEMT
Technology:
GaN on SiC
CW/Pulse:
CW
Frequency:
2620 to 2690 MHz
Power:
35.05 dBm
Package Type:
Surface Mount, Flanged
Power(W):
3.2 W
Gain:
18.6 dB
Supply Voltage:
48 V
more info
Description:2.7 to 3 GHz, HEMT Transistor
Application Industry:
Radar
Transistor Type:
HEMT
Technology:
GaN on SiC, GaN
CW/Pulse:
Pulse
Frequency:
2.7 to 3 GHz
Power:
48.13 to 49.54 dBm
Package Type:
Flanged
Power(W):
89.95 W
Gain:
14.8 dB
Supply Voltage:
32 V
Package:
Ceramic
more info
Description:GaAs HEMT from 12 GHz
Application Industry:
SATCOM, Wireless Infrastructure
Transistor Type:
HEMT
Technology:
GaAs
Frequency:
12 GHz
Package Type:
Surface Mount
Gain:
11 to 13 dB
Supply Voltage:
2 V
Package:
LG
more info
Description:8 W, GaN HEMT Transistor from DC to 6 GHz
Application Industry:
Wireless Infrastructure, Test & Measurement, Radar
Transistor Type:
HEMT
Technology:
GaN on SiC, GaN
CW/Pulse:
CW, Pulse
Frequency:
DC to 6 GHz
Power:
39.03 dBm
Package Type:
Flanged
Power(W):
8 W
Supply Voltage:
28 V
more info
PD54008L-E Image
Description:8 W, LDMOS RF Transistor from 480 to 520 MHz
Application Industry:
Broadcast, Commercial, Wireless Infrastructure
Transistor Type:
LDMOS
Technology:
Si
CW/Pulse:
CW
Frequency:
480 to 520 MHz
Power:
39.03 dBm
Package Type:
Surface Mount
Power(W):
8 W
Supply Voltage:
7.5 V
more info

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