RF Transistors - Page 31

2359 RF Transistors from 26 Manufacturers meet your specification.
Description:GaN Power Transistor
Application Industry:
Wireless Infrastructure, Wireless Communication
Transistor Type:
HEMT
Technology:
GaN on SiC, GaN
CW/Pulse:
CW
Frequency:
1.805 to 1.88 GHz
Power:
55.18 dBm
Package Type:
Flanged
Power(W):
329.61 W
Gain:
15.5 dB
Supply Voltage:
48 V
Package:
RF24001DKR3
more info
Description:49.54 dBm (90 W), LDMOS Transistor from 3400 to 3600 MHz
Application Industry:
Wireless Infrastructure
Transistor Type:
LDMOS
Technology:
Si
CW/Pulse:
Pulse, CW
Frequency:
3.4 to 3.6 GHz
Power:
48.75 dBm
Package Type:
Surface Mount
Power(W):
74.99 W
Supply Voltage:
28 V
Package:
SOT1121B
more info
Description:HIGH EFFICIENCY pHEMT POWER FET CHIP (.25µm x 600µm)
Application Industry:
Test & Measurement, Aerospace & Defence, Commercia...
Transistor Type:
pHEMT
Technology:
GaAs
CW/Pulse:
CW
Frequency:
1 to 26.5 GHz
Power:
29 dBm
Package Type:
Chip
Power(W):
0.79 W
Gain:
8 to 13.5 dB
Supply Voltage:
8 V
more info
MRF6VP21KH Image
Description:Lateral N-Channel Broadband RF Power MOSFET, 10-235 MHz, 1000 W, 50 V
Application Industry:
ISM, Broadcast
Transistor Type:
LDMOS
Technology:
Si
CW/Pulse:
Pulse, CW
Frequency:
10 to 235 MHz
Power:
53.01 dBm
Package Type:
Flanged
Power(W):
199.99 W
Supply Voltage:
50 V
Package:
CASE 375D--05, STYLE 1 NI--1230
more info
Description:DC to 25.2 GHz, HEMT Transistor
Application Industry:
Wireless Infrastructure, Aerospace & Defence, Broa...
Transistor Type:
HEMT
Technology:
InGaAs
CW/Pulse:
CW
Frequency:
DC to 25.2 GHz
Package Type:
Flanged
Gain:
7.5 to 10 dB
Supply Voltage:
1.5 V
more info
Description:960 MHz to 1.21 GHz, 800 W Transistor for Pulsed Avionics Applications
Application Industry:
Aerospace & Defence
Transistor Type:
MOSFET
Technology:
Si
CW/Pulse:
Pulse
Frequency:
960 MHz to 1.21 GHz
Power:
59.03 dBm
Package Type:
Flanged
Power(W):
800 W
Gain:
15.5 dB
Supply Voltage:
50 V
more info
Description:398 W, GaN on SiC OptiGaN HEMT from 1930 to 2000 MHz for 4G LTE & Open RAN Applications
Application Industry:
Cellular, Wireless Infrastructure, Broadcast, Base...
Transistor Type:
HEMT
Technology:
GaN on SiC
CW/Pulse:
CW
Frequency:
1930 to 2000 MHz
Power:
48.98 dBm
Package Type:
Surface Mount, Flanged
Power(W):
79 W
Gain:
14.4 dB
Supply Voltage:
48 V
more info
Description:1200 to 1400 MHz, 8.78 dB Bipolar Transistor
Application Industry:
Radar
Transistor Type:
Bipolar
Technology:
Si
CW/Pulse:
Pulse
Frequency:
1.215 to 1.4 GHz
Power:
55.74 dBm
Package Type:
Flanged
Power(W):
374.97 W
Gain:
8.7 dB
Supply Voltage:
42 V
Package:
Ceramic
more info
Description:GaN on SiC, GaN HEMT from 3.1 to 3.5 GHz
Application Industry:
Radar, Wireless Infrastructure
Transistor Type:
HEMT
Technology:
GaN on SiC, GaN
CW/Pulse:
Pulse
Frequency:
3.1 to 3.5 GHz
Power:
56.81 to 57.56 dBm
Package Type:
Flanged
Power(W):
480 to 570 W
Supply Voltage:
50 V
more info
Description:57 W, GaN HEMT Transistor from DC to 5 GHz
Application Industry:
Wireless Infrastructure, Test & Measurement, Radar
Transistor Type:
HEMT
Technology:
GaN on SiC, GaN
CW/Pulse:
CW, Pulse
Frequency:
DC to 5 GHz
Power:
47.56 dBm
Package Type:
Flanged
Power(W):
57.02 W
Supply Voltage:
28 V
more info
RF3L05150CB4 Image
Description:150 W, LDMOS RF Transistor operating at 1000 MHz
Application Industry:
Avionics, Commercial, Wireless Infrastructure
Transistor Type:
LDMOS
Technology:
Si
CW/Pulse:
Pulse
Frequency:
1000 MHz
Power:
51.76 dBm
Package Type:
Flanged
Power(W):
150 W
Supply Voltage:
28 V / 32 V
more info

FiltersReset All

Application Industry

Transistor Type

Technology

CW/Pulse

Frequency

 
 
Apply

Power (dBm)

Apply

Power(W)

Apply

Gain (dB)

Apply

Supply Voltage (V)

Apply

Package Type