RF Transistors - Page 31

2357 RF Transistors from 26 Manufacturers meet your specification.
Description:GaN Power Transistor
Application Industry:
Wireless Infrastructure, Wireless Communication
Transistor Type:
HEMT
Technology:
GaN on SiC, GaN
CW/Pulse:
CW
Frequency:
2.11 to 2.17 GHz
Power:
50.41 dBm
Package Type:
Flanged
Power(W):
109.9 W
Gain:
18.4 dB
Supply Voltage:
48 V
Package:
NS-AS01
more info
AFV121KHS Image
Description:Airfast RF Power LDMOS Transistor, 1000 W Peak, 960-1215 MHz, 50 V
Application Industry:
Aerospace & Defence, Radar, Wireless Infrastructur...
Transistor Type:
LDMOS
Technology:
Si
CW/Pulse:
Pulse
Frequency:
960 MHz to 1.215 GHz
Power:
60 dBm
Package Type:
Flanged
Power(W):
1000 W
Supply Voltage:
50 V
Package:
NI--1230S--4S
more info
Description:30 W GaN HEMT from 13.75 to 14.5 GHz for SATCOM Applications
Application Industry:
SATCOM, RF Energy
Transistor Type:
HEMT
Technology:
GaN on SiC, GaN
Frequency:
13.75 to 14.50 GHz
Power:
45.3 dBm
Package Type:
Flanged
Power(W):
33.88 W
Gain:
8.5 to 9.5 dB
Supply Voltage:
24 V
more info
Description:1.2 to 1.4 GHz, 25 W Transistor for Pulsed Avionics Applications
Application Industry:
Radar
Transistor Type:
MOSFET
Technology:
Si
CW/Pulse:
Pulse
Frequency:
1.2 to 1.4 GHz
Power:
43.98 dBm
Package Type:
Surface Mount
Power(W):
25 W
Gain:
19 to 20.5 dB
Supply Voltage:
50 V
more info
Description:33.1 W, GaN on SiC OptiGaN HEMT from 2620 to 2690 MHz for 4G LTE & Open RAN Applications
Application Industry:
Cellular, Wireless Infrastructure, Broadcast, Base...
Transistor Type:
HEMT
Technology:
GaN on SiC
CW/Pulse:
CW
Frequency:
2620 to 2690 MHz
Power:
35.05 dBm
Package Type:
Surface Mount, Flanged
Power(W):
3.2 W
Gain:
18.6 dB
Supply Voltage:
48 V
more info
Description:960 MHz to 1.22 GHz, HEMT Transistor
Application Industry:
Aerospace & Defence, Avionics
Transistor Type:
HEMT
Technology:
GaN on SiC, GaN
CW/Pulse:
Pulse
Frequency:
960 MHz to 1.22 GHz
Power:
53.98 to 55.91 dBm
Package Type:
Flanged
Power(W):
389.94 W
Gain:
17.5 dB
Supply Voltage:
50 V
Package:
Ceramic
more info
Description:GaAs FET from 1.8 GHz
Application Industry:
Wireless Infrastructure
Transistor Type:
FET
Technology:
GaAs
Frequency:
1.8 GHz
Power:
43 to 44.5 dBm
Package Type:
Flanged
Power(W):
19.95 to 28.18 W
Package:
IL
more info
Description:2.6 W, GaN HEMT Transistor from DC to 3.5 GHz
Application Industry:
Wireless Infrastructure, Test & Measurement, Radar
Transistor Type:
HEMT
Technology:
GaN on SiC, GaN
CW/Pulse:
CW, Pulse
Frequency:
DC to 3.5 GHz
Power:
34.15 dBm
Package Type:
Flanged
Power(W):
2.6 W
Supply Voltage:
48 V
more info
Description:30 W, LDMOS / FET RF Transistor from 1 to 1.5 GHz
Application Industry:
Broadcast, Avionics, Radar, Avionics, Wireless Inf...
Transistor Type:
LDMOS
Technology:
Si
CW/Pulse:
CW, Pulse
Frequency:
1 to 1.5 GHz
Power:
44.77 dBm
Package Type:
Flanged
Power(W):
30 W
Supply Voltage:
50 V
more info
WG011012150S Image
Description:150 W, GaN on SiC Power Transistor from 1.1 to 1.2 GHz
Application Industry:
Radar, Wireless Infrastructure
Transistor Type:
HEMT
Technology:
GaN on SiC, GaN
CW/Pulse:
CW
Frequency:
1.1 to 1.2 GHz
Power:
51.76 dBm
Package Type:
Flanged
Power(W):
149.97 W
Supply Voltage:
42 V
more info
Description:HiFET High Voltage GaAs FET DC-12 GHz
Application Industry:
Wireless Infrastructure, Radar, Broadcast
Transistor Type:
FET
Technology:
GaAs
CW/Pulse:
CW
Frequency:
DC to 12 GHz
Power:
34.5 dBm
Package Type:
Flanged
Power(W):
2.82 W
Supply Voltage:
28 V
Package:
Ceramic
more info

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