RF Transistors - Page 36

2360 RF Transistors from 26 Manufacturers meet your specification.
Description:GaN Power Transistor
Application Industry:
Wireless Infrastructure, Wireless Communication
Transistor Type:
HEMT
Technology:
GaN on SiC, GaN
CW/Pulse:
CW
Frequency:
1.805 to 1.88 GHz
Power:
55.18 dBm
Package Type:
Flanged
Power(W):
329.61 W
Gain:
15.5 dB
Supply Voltage:
48 V
Package:
RF24001DKR3
more info
WG028031350I Image
Description:350 W, GaN on SiC Power Transistor from 2.8 to 3.1 GHz
Application Industry:
Radar, Wireless Infrastructure
Transistor Type:
HEMT
Technology:
GaN on SiC, GaN
CW/Pulse:
CW
Frequency:
2.8 to 3.1 GHz
Power:
55.44 dBm
Package Type:
Flanged
Power(W):
349.95 W
Supply Voltage:
50 V
more info
Description:Ceramic Package GaN AM060WX-BI-R Power HEMT DC-15GHz
Application Industry:
Wireless Infrastructure, Radar, Broadcast
Transistor Type:
HEMT
Technology:
GaN on SiC, GaN
CW/Pulse:
CW
Frequency:
DC to 15 GHz
Power:
40.1 to 40.5 dBm (P5dB)
Package Type:
Die
Power(W):
10.23 W
Supply Voltage:
28 V
more info
Description:25 W, Si LDMOS Power Transistor
Application Industry:
Aerospace & Defence, Broadcast, Wireless Infrastru...
Transistor Type:
LDMOS
Technology:
Si
Frequency:
1 to 500 MHz
Power:
43 dBm
Package Type:
Flanged
Power(W):
25 W
more info
Description:30 Watt GaN Transistor from DC to 4.5 GHz
Application Industry:
Radar, Wireless Infrastructure
Transistor Type:
HEMT
Technology:
GaN on SiC, GaN
CW/Pulse:
CW
Frequency:
DC to 4.5 GHz
Power:
44.77 dBm
Package Type:
Surface Mount
Power(W):
30 W
Gain:
16 dB
Supply Voltage:
50 V
more info
Description:Single Voltage E-pHEMT Low Noise 38 dBm OIP3 in LPCC
Application Industry:
Wireless Infrastructure
Transistor Type:
E-pHEMT
Technology:
GaAs
CW/Pulse:
CW
Frequency:
0.05 to 6 GHz
Power:
24.5 dBm
Package Type:
Chip
Power(W):
0.28 W
Supply Voltage:
4 V
Package:
SMT 2x2
more info
Description:30 GHz Low-Noise Quasi E-Mode pHEMT Transistor
Application Industry:
Commercial, Military, Space, Wireless Infrastructu...
Transistor Type:
FET
CW/Pulse:
CW
Frequency:
DC to 30 GHz
Power:
16 dBm
Package Type:
Chip
Power(W):
0.04 W
Gain:
10 to 13 dB
Supply Voltage:
4 V
more info
Description:60 W GaN on SiC HEMT from DC to 6 GHz
Application Industry:
Radar, Wireless Infrastructure
Transistor Type:
HEMT
Technology:
GaN, GaN on SiC
CW/Pulse:
CW, Pulse
Frequency:
DC to 6 GHz
Power:
49.03 dBm
Package Type:
Die
Power(W):
79.98 W
Gain:
14.5 to 16 dB
Supply Voltage:
50 V
more info
Description:RF POWER VERTICAL MOSFET
Application Industry:
Aerospace & Defence, Commercial
Transistor Type:
MOSFET
Technology:
Si
CW/Pulse:
Pulse
Frequency:
DC to 175 MHz
Power:
51.76 dBm
Package Type:
Flanged
Power(W):
149.97 W
Supply Voltage:
28 V
Package:
M174
more info
Description:2.5 to 2.7 GHz, HEMT Transistor
Application Industry:
Wireless Infrastructure
Transistor Type:
HEMT
Technology:
GaN on SiC, GaN
CW/Pulse:
Pulse
Frequency:
2.5 to 2.7 GHz
Power:
46.99 dBm
Package Type:
Flanged
Power(W):
50 W
Gain:
16 dB
Supply Voltage:
48 V
Package:
Ceramic
more info
Description:896 to 928 MHz, GaN on Si HEMT for RF Energy Application
Application Industry:
RF Energy
Transistor Type:
HEMT
Technology:
GaN on Si, GaN
CW/Pulse:
CW
Frequency:
896 to 928 MHz
Power:
60 dBm
Package Type:
Surface Mount
Power(W):
1000 W
Gain:
19 dB
Supply Voltage:
50 V
Package:
ACu-1280S-2
more info

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