RF Transistors - Page 36

2357 RF Transistors from 26 Manufacturers meet your specification.
Description:GaN Power Transistor
Application Industry:
Wireless Infrastructure, Wireless Communication
Transistor Type:
HEMT
Technology:
GaN on SiC, GaN
CW/Pulse:
CW
Frequency:
1.88 to 2.025 GHz
Power:
52.9 dBm
Package Type:
Flanged
Power(W):
194.98 W
Gain:
16.9 dB
Supply Voltage:
48 V
Package:
RF12001DKR3
more info
Description:4 W, Si VDMOS Power Transistor
Application Industry:
Aerospace & Defence, Broadcast, Wireless Infrastru...
Transistor Type:
VDMOS
Technology:
Si
Frequency:
1 to 850 MHz
Power:
36 dBm
Package Type:
Flanged
Power(W):
4 W
more info
Description:30 Watt GaN Transistor from DC to 4.5 GHz
Application Industry:
Radar, Wireless Infrastructure
Transistor Type:
HEMT
Technology:
GaN on SiC, GaN
CW/Pulse:
CW
Frequency:
DC to 4.5 GHz
Power:
44.77 dBm
Package Type:
Surface Mount
Power(W):
30 W
Gain:
16 dB
Supply Voltage:
50 V
more info
Description:SC-70 (SOT-343) Low Noise 31.5 dBm OIP3
Application Industry:
Wireless Infrastructure
Transistor Type:
pHEMT
Technology:
GaAs
CW/Pulse:
CW
Frequency:
450 MHz to 10 GHz
Power:
20 dBm
Package Type:
Surface Mount
Power(W):
0.1 W
Supply Voltage:
4 V
Package:
SOT-343
more info
Description:Class-AB GaN-on-SiC HEMT Transistor
Application Industry:
Aerospace & Defence, Avionics
Transistor Type:
HEMT
Technology:
GaN on SiC, GaN
CW/Pulse:
Pulse
Frequency:
1.025 to 1.15 GHz
Power:
60 dBm
Package Type:
Die
Power(W):
1000 W
Supply Voltage:
50 V
Package:
55-Q03
more info
Description:Space Qualified GaAs FETs at 12 GHz
Application Industry:
Military, Space, Test & Measurement, Wireless Infr...
Transistor Type:
FET
Technology:
GaAs
CW/Pulse:
CW
Frequency:
12 GHz
Power:
20 dBm
Package Type:
Chip
Power(W):
0.1 W
Gain:
8 dB
more info
Description:10 W GaN on SiC HEMT from DC to 8 GHz
Application Industry:
Radar, Wireless Infrastructure
Transistor Type:
HEMT
Technology:
GaN, GaN on SiC
CW/Pulse:
CW, Pulse
Frequency:
DC to 8 GHz
Power:
41.76 dBm
Package Type:
Die
Power(W):
15 W
Gain:
16.5 to 17.8 dB
Supply Voltage:
50 V
more info
Description:1.8 to 2.2 GHz, HEMT Transistor
Application Industry:
Wireless Infrastructure
Transistor Type:
HEMT
Technology:
GaN on SiC, GaN
CW/Pulse:
Pulse
Frequency:
1.8 to 2.2 GHz
Power:
54.77 dBm
Package Type:
Flanged
Power(W):
299.92 W
Gain:
21 dB
Supply Voltage:
48 V
Package:
Ceramic
more info
Description:Si Based Bipolar Transistor
Application Industry:
Aerospace & Defence, ISM, Avionics
Transistor Type:
Bipolar
Technology:
Si
CW/Pulse:
Pulse
Frequency:
1.025 to 1.15 GHz
Power:
55.44 dBm
Package Type:
Flanged
Power(W):
349.95 W
Gain:
9 dB
Supply Voltage:
50 V
Package:
Flange Ceramic
more info
Description:55.44 dBm (350 W), LDMOS Transistor from 10 to 600 MHz
Application Industry:
Broadcast, ISM, RF Energy, Wireless Infrastructure
Transistor Type:
LDMOS
Technology:
Si
CW/Pulse:
CW, Pulse
Frequency:
10 to 600 MHz
Power:
55.44 dBm
Package Type:
Surface Mount
Power(W):
349.95 W
Supply Voltage:
50 V
Package:
SOT1223-2
more info
Description:HIGH EFFICIENCY HETEROJUNCTION POWER FET CHIP (.25µm x 1200µm)
Application Industry:
Test & Measurement, Aerospace & Defence, Commercia...
Transistor Type:
pHEMT
Technology:
GaAs
CW/Pulse:
CW
Frequency:
DC to 26 GHz
Power:
32 dBm
Package Type:
Chip
Power(W):
1.58 W
Gain:
8 to 12 dB
Supply Voltage:
8 V
more info

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