RF Transistors - Page 59

2357 RF Transistors from 26 Manufacturers meet your specification.
Description:GaN Power Transistor
Application Industry:
Wireless Infrastructure, Wireless Communication
Transistor Type:
HEMT
Technology:
GaN on SiC, GaN
CW/Pulse:
CW
Frequency:
DC to 6 GHz
Power:
44.47 dBm
Package Type:
Flanged
Power(W):
27.99 W
Gain:
17.6 dB
Supply Voltage:
48 V
Package:
NS-CS01
more info
Description:100 W, GaN on SiC Transistor from 1000 to 14000 MHz
Transistor Type:
HEMT
Technology:
GaN on SiC
CW/Pulse:
CW
Frequency:
1000 to 14000 MHz
Power:
50 dBm
Package Type:
Die
Power(W):
100 W
Supply Voltage:
28 V
more info
Description:AlGaAs/InGaAs pHEMT for Military & Space Applications Up to 28 GHz
Application Industry:
Commercial, Military, Space, Wireless Infrastructu...
Transistor Type:
pHEMT
Technology:
AlGaAs/InGaAs
CW/Pulse:
CW
Frequency:
DC to 28 GHz
Power:
23 dBm
Package Type:
Chip
Power(W):
0.2 W
Supply Voltage:
2.5 to 8 V
more info
Description:17 W GaN RF Transistor from DC to 4 GHz
Application Industry:
Wireless Infrastructure, Radar, Aerospace & Defenc...
Transistor Type:
HEMT
Technology:
GaN on SiC, GaN
CW/Pulse:
Pulse, CW
Frequency:
DC to 4 GHz
Power:
41.76 dBm
Package Type:
Surface Mount
Power(W):
15 W
Gain:
24 dB
Supply Voltage:
12 to 60 V
Package:
3 x 3 mm
more info
Description:2.4 to 2.5 GHz, GaN on Si HEMT for RF Energy Application
Application Industry:
RF Energy
Transistor Type:
HEMT
Technology:
GaN on Si, GaN
CW/Pulse:
CW
Frequency:
2.4 to 2.5 GHz
Power:
53.01 dBm
Package Type:
Surface Mount
Power(W):
199.99 W
Gain:
17 dB
Supply Voltage:
50 V
Package:
TO-272S-4
more info
Description:43.98 dBm (25 W), LDMOS Transistor from 3400 to 3800 MHz
Application Industry:
Wireless Infrastructure, Wireless Communication
Transistor Type:
LDMOS
Technology:
Si
CW/Pulse:
Pulse, CW
Frequency:
3.4 to 3.8 GHz
Power:
43.97 dBm
Package Type:
Surface Mount
Power(W):
24.95 W
Supply Voltage:
28 V
Package:
SOT608A
more info
MRF6V3090NB Image
Description:Broadband RF Power LDMOS Transistor, 470-860 MHz, 90 W, 50 V
Application Industry:
Aerospace & Defence, Commercial, Broadcast
Transistor Type:
LDMOS
Technology:
Si
CW/Pulse:
Pulse, CW
Frequency:
470 MHz to 1.215 GHz
Power:
42.55 to 49.54 dBm
Package Type:
Flanged
Power(W):
89.95 W
Supply Voltage:
50 V
Package:
TO--270WB--4 PLASTIC
more info
Description:DC to 520 MHz, MOSFET Transistor
Application Industry:
Wireless Infrastructure, Broadcast
Transistor Type:
MOSFET
Technology:
Si
CW/Pulse:
CW
Frequency:
DC to 520 MHz
Power:
29.3 to 31.13 dBm
Package Type:
Flanged
Power(W):
0.85 W
Gain:
14 dB
Supply Voltage:
7.2 V
more info
Description:GaN Power Transistor
Application Industry:
Wireless Infrastructure, Wireless Communication
Transistor Type:
HEMT
Technology:
GaN on SiC, GaN
CW/Pulse:
CW
Frequency:
2.11 to 2.17 GHz
Power:
50.41 dBm
Package Type:
Flanged
Power(W):
109.9 W
Gain:
18.4 dB
Supply Voltage:
48 V
Package:
NS-AS01
more info
Description:1200 to 1400 MHz, 8.1 dB Bipolar Transistor
Application Industry:
Radar
Transistor Type:
Bipolar
Technology:
Si
CW/Pulse:
Pulse
Frequency:
1.215 to 1.4 GHz
Power:
51.76 dBm
Package Type:
Flanged
Power(W):
149.97 W
Gain:
8.1 dB
Supply Voltage:
40 V
Package:
Ceramic
more info
Description:GaN on SiC, GaN HEMT from 2.7 to 2.9 GHz
Application Industry:
Radar, Wireless Infrastructure
Transistor Type:
HEMT
Technology:
GaN on SiC, GaN
CW/Pulse:
Pulse
Frequency:
2.7 to 2.9 GHz
Power:
53.97 to 55.05 dBm
Package Type:
Flanged
Power(W):
250 to 320 W
Supply Voltage:
50 V
more info

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