RF Transistors - Page 58

2357 RF Transistors from 26 Manufacturers meet your specification.
IE21165PE Image
Description:GaN Power Transistor
Application Industry:
Wireless Infrastructure, Wireless Communication
Transistor Type:
HEMT
Technology:
GaN on SiC, GaN
CW/Pulse:
CW
Frequency:
2.11 to 2.17 GHz
Power:
52.17 dBm
Package Type:
Flanged
Power(W):
164.82 W
Gain:
17.5 dB
Supply Voltage:
48 V
Package:
NS-AS01
more info
MHT1006N Image
Description:728 to 2700 MHz RF Transistor for Consumer and Commercial Cooking
Application Industry:
ISM, RF Energy, Commercial
Transistor Type:
LDMOS
Technology:
Si
CW/Pulse:
Pulse, CW
Frequency:
728 MHz to 2.7 GHz
Power:
31 to 31 dBm
Package Type:
Surface Mount
Power(W):
1.26 W
Supply Voltage:
28 V
Package:
PLD--1.5W PLASTIC
more info
Description:70 W GaN HEMT from 13.75 to 14.5 GHz for Ku-Band SATCOM Applications
Application Industry:
SATCOM
Transistor Type:
HEMT
Technology:
GaN on SiC, GaN
CW/Pulse:
CW
Frequency:
13.75 to 14.5 GHz
Power:
48.45 dBm
Package Type:
Flanged
Power(W):
70 W
Supply Voltage:
24 V
more info
Description:GaN on SiC HEMT from 1805 to 1880 MHz
Application Industry:
Cellular, Wireless Infrastructure
Transistor Type:
HEMT
Technology:
GaN on SiC
CW/Pulse:
Pulse
Frequency:
1805 to 1880 MHz
Power:
48.97 to 56.7 dBm
Package Type:
Flanged
Power(W):
79 to 468 W
Gain:
13.5 to 14 dB
Supply Voltage:
55 V
Package:
RF24010DKR3
more info
Description:960 to 1215 MHz, 16.8 dB LDMOS Transistor
Application Industry:
Aerospace & Defence, Avionics
Transistor Type:
LDMOS
Technology:
Si
CW/Pulse:
Pulse
Frequency:
960 MHz to 1.215 GHz
Power:
47.78 dBm
Package Type:
Flanged
Power(W):
59.98 W
Gain:
16.8 dB
Supply Voltage:
30 V
Package:
Ceramic
more info
Description:GaN on SiC, GaN HEMT from 2.7 to 2.9 GHz
Application Industry:
Radar, Wireless Infrastructure
Transistor Type:
HEMT
Technology:
GaN on SiC, GaN
CW/Pulse:
Pulse
Frequency:
2.7 to 2.9 GHz
Power:
57.7 to 58.45 dBm
Package Type:
Flanged
Power(W):
600 to 700 W
Supply Voltage:
50 V
more info
Description:20 W, GaN HEMT Transistor from DC to 15 GHz
Application Industry:
Radar, Wireless Infrastructure
Transistor Type:
HEMT
Technology:
GaN on SiC, GaN
CW/Pulse:
CW
Frequency:
DC to 15 GHz
Power:
43.01 dBm
Package Type:
Die
Power(W):
20 W
Supply Voltage:
28 V
more info
Description:63 W, LDMOS RF Transistor from DC to 945 MHz
Application Industry:
Wireless Infrastructure
Transistor Type:
LDMOS
Technology:
Si
CW/Pulse:
CW
Frequency:
DC to 945 MHz
Power:
47.99 dBm
Package Type:
Flanged
Power(W):
63 W
Supply Voltage:
28 V
more info
WG35165S Image
Description:165 W, GaN on SiC Power transistor from 3.4 to 3.6 GHz
Application Industry:
Wireless Infrastructure
Transistor Type:
FET
Technology:
GaN on SiC, GaN
CW/Pulse:
CW
Frequency:
3.4 to 3.6 GHz
Power:
52.17 dBm
Package Type:
Flanged
Power(W):
164.82 W
Supply Voltage:
48 V
Package:
Flanged
more info
Description:High Power Rev 7 GaAs Power FET
Application Industry:
Wireless Infrastructure
Transistor Type:
MESFET
Technology:
GaAs
CW/Pulse:
CW
Frequency:
DC to 6 GHz
Power:
34 dBm
Package Type:
Surface Mount
Power(W):
2.51 W
Supply Voltage:
7 V
Package:
Ceramic
more info
Description:80 W, Si LDMOS Power Transistor
Application Industry:
Aerospace & Defence, Broadcast, Wireless Infrastru...
Transistor Type:
LDMOS
Technology:
Si
Frequency:
1 to 1000 MHz
Power:
49 dBm
Package Type:
Flanged
Power(W):
80 W
more info

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