RF Transistors - Page 57

2360 RF Transistors from 26 Manufacturers meet your specification.
Description:GaN Power Transistor
Application Industry:
Wireless Infrastructure, Wireless Communication
Transistor Type:
HEMT
Technology:
GaN on SiC, GaN
CW/Pulse:
CW
Frequency:
758 to 858 GHz
Power:
53.4 dBm
Package Type:
Flanged
Power(W):
218.78 W
Gain:
22 dB
Supply Voltage:
48 V
Package:
NS-AS01
more info
Description:22.18 W, GaN HEMT Transistor from 5.8 to 6.7 GHz
Application Industry:
Test & Measurement, Radar, Wireless Infrastructure
Transistor Type:
HEMT
Technology:
GaN on SiC, GaN
CW/Pulse:
CW
Frequency:
5.8 to 6.7 GHz
Power:
43.5 dBm
Package Type:
Flanged
Power(W):
22.39 W
Supply Voltage:
28 V
Package:
680B
more info
RF2L15200CB4 Image
Description:200 W, LDMOS RF Transistor from 860 MHz to 1.5 GHz
Application Industry:
Avionics, Commercial, Broadcast, Wireless Infrastr...
Transistor Type:
LDMOS
Technology:
Si
CW/Pulse:
CW, Pulse
Frequency:
860 MHz to 1.5 GHz
Power:
53.01 dBm
Package Type:
Flanged
Power(W):
200 W
Supply Voltage:
28 V
more info
WG60028D Image
Description:GaN-on-SiC Dual-Output Transistor for Aerospace & Telecom Applications
Application Industry:
Aerospace & Defence, Broadcast, Wireless Infrastru...
Technology:
GaN on SiC, GaN
Frequency:
DC to 6 GHz
Power:
44.47 dBm
Package Type:
Surface Mount
Power(W):
28 W
Supply Voltage:
50 V
Package:
DFN
more info
Description:High Power Rev 7 GaAs Power FET
Application Industry:
Wireless Infrastructure
Transistor Type:
MESFET
Technology:
GaAs
CW/Pulse:
CW
Frequency:
DC to 6 GHz
Power:
39.5 dBm
Package Type:
Flanged
Power(W):
8.91 W
Supply Voltage:
7 V
Package:
Ceramic
more info
Description:300 W, Si LDMOS Power Transistor
Application Industry:
Aerospace & Defence, Broadcast, Wireless Infrastru...
Transistor Type:
LDMOS
Technology:
Si
Frequency:
1 to 350 MHz
Power:
54 dBm
Package Type:
Flanged
Power(W):
300 W
more info
Description:GaAs FET for Military & Space Applications Up to 26 GHz
Application Industry:
Commercial, Military, Space, Wireless Infrastructu...
Transistor Type:
FET
Technology:
GaAs
CW/Pulse:
CW
Frequency:
DC to 26 GHz
Power:
21 dBm
Package Type:
Chip
Power(W):
0.13 W
Gain:
11 dB
Supply Voltage:
6 to 7 V
more info
Description:6 Watts, 22 Volts, Class C Microwave 2200-2400 MHz
Transistor Type:
Bipolar
Technology:
Si
CW/Pulse:
CW
Frequency:
2.2 to 2.4 GHz
Power:
37.78 dBm
Package Type:
2-Hole Flanged
Power(W):
6 W
Supply Voltage:
22 V
Package:
55LV-1
more info
Description:30W, 32V DC to 3.5 GHz, GaN RF Flangeless Power Transistor for Military, Civilian Radars, Test Intrumentation and Jammers Applications
Application Industry:
Wireless Infrastructure, Radar, Aerospace & Defenc...
Transistor Type:
HEMT
Technology:
GaN on SiC, GaN
CW/Pulse:
Pulse, CW
Frequency:
DC to 3.5 GHz
Power:
44.77 dBm
Package Type:
Flanged
Power(W):
29.99 W
Gain:
16.5 dB
Supply Voltage:
32 V
more info
Description:400 W GaN on SiC HEMT from 3.4 to 3.6 GHz
Application Industry:
Wireless Infrastructure
Transistor Type:
HEMT
Technology:
GaN on SiC, GaN
CW/Pulse:
CW
Frequency:
3400 to 3600 MHz
Power:
56.02 dBm
Package Type:
Earless Flanged
Power(W):
400 W
Gain:
13 dB
Supply Voltage:
48 V
more info
Description:40 dBm (10 W), LDMOS Transistor from 10 to 1400 MHz
Application Industry:
ISM, Wireless Infrastructure
Transistor Type:
LDMOS
Technology:
Si
CW/Pulse:
CW
Frequency:
10 MHz to 1.4 GHz
Power:
30 to 43.01 dBm
Package Type:
Surface Mount
Power(W):
20 W
Supply Voltage:
50 V
Package:
SOT1352-1
more info

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