RF Transistors - Page 57

2357 RF Transistors from 26 Manufacturers meet your specification.
ID37411D Image
Description:410 W GaN-on-SiC HEMT from 3600 to 3800 MHz
Application Industry:
Wireless Infrastructure
Transistor Type:
HEMT
Technology:
GaN on SiC
Frequency:
3600 to 3800 MHz
Package Type:
Flanged
Gain:
14.4 dB
Supply Voltage:
48 V
more info
Description:33.88 W, GaN HEMT Transistor from DC to 3.7 GHz
Application Industry:
Wireless Infrastructure, Test & Measurement, Radar
Transistor Type:
HEMT
Technology:
GaN on SiC, GaN
CW/Pulse:
CW, Pulse
Frequency:
DC to 3.7 GHz
Power:
45.3 dBm
Package Type:
Flanged
Power(W):
33.88 W
Gain:
14.8 dB
Supply Voltage:
48 V
more info
Description:200 to 230 W, LDMOS RF Transistor from DC to 960 MHz
Transistor Type:
LDMOS
Technology:
Si
CW/Pulse:
CW
Frequency:
DC to 960 MHz
Power:
53.01 to 53.617 dBm
Power(W):
200 to 230 W
Supply Voltage:
32 V
more info
Description:100 W, GaN on SiC Power Transistor from 1 to 3 GHz
Application Industry:
Aerospace & Defence, Wireless Infrastructure
Transistor Type:
HEMT
Technology:
GaN on SiC, GaN
CW/Pulse:
CW
Frequency:
1 to 3 GHz
Power:
50 dBm
Package Type:
Flanged
Power(W):
100 W
Supply Voltage:
50 V
more info
Description:Ceramic Package GaAs Power pHEMT DC-8GHz
Application Industry:
Wireless Infrastructure, Radar, Broadcast
Transistor Type:
pHEMT
Technology:
GaAs
CW/Pulse:
CW
Frequency:
DC to 6 GHz
Power:
37 dBm
Package Type:
Flanged
Power(W):
5.01 W
Supply Voltage:
28 V
Package:
Ceramic
more info
Description:70 W, GaN on SiC HEMT Power Transistor
Application Industry:
Wireless Communication
Transistor Type:
HEMT
Technology:
GaN on SiC, GaN
Frequency:
1 MHz to 3 GHz
Power:
48 dBm
Package Type:
Flanged
Power(W):
70 W
more info
Description:RF POWER MOSFET N- CHANNEL ENHANCEMENT MODE
Application Industry:
ISM, Commercial
Transistor Type:
MOSFET
Technology:
Si
CW/Pulse:
Pulse
Frequency:
DC to 40 MHz
Power:
58.75 dBm
Package Type:
Die
Power(W):
749.89 W
Supply Voltage:
300 V
Package:
T1
more info
Description:AlGaAs/InGaAs pHEMT for Military & Space Applications Up to 18 GHz
Application Industry:
Commercial, Military, Space, Wireless Infrastructu...
Transistor Type:
pHEMT
Technology:
AlGaAs/InGaAs
CW/Pulse:
CW
Frequency:
DC to 18 GHz
Power:
28.5 dBm
Package Type:
Chip
Power(W):
0.71 W
Supply Voltage:
2.5 to 8 V
more info
Description:100 Watt GaN on SiC HEMT from DC to 3.5 GHz
Application Industry:
Wireless Infrastructure, Radar, Aerospace & Defenc...
Transistor Type:
HEMT
Technology:
GaN on SiC, GaN
CW/Pulse:
Pulse, CW
Frequency:
DC to 3.5 GHz
Power:
50 dBm
Package Type:
Flanged
Power(W):
100 W
Gain:
17.4 dB
Supply Voltage:
12 to 60 V
more info
Description:30 Watt, GaN HEMT Die from DC to 8 GHz
Application Industry:
Test & Measurement, Wireless Infrastructure, Aeros...
Transistor Type:
HEMT
Technology:
GaN on SiC, GaN
CW/Pulse:
CW
Frequency:
DC to 8000 MHz
Power:
44.77 dBm
Package Type:
Die
Power(W):
29.99 W
Supply Voltage:
28 V
more info
Description:800 W LDMOS Power Transistor from 400 to 800 MHz
Application Industry:
Radar, Wireless Infrastructure
Transistor Type:
LDMOS
Technology:
Si
CW/Pulse:
Pulse, CW
Frequency:
400 to 800 MHz
Power:
58.75 to 59.03 dBm
Package Type:
2-Hole Flanged
Power(W):
750 to 800 W (P1dB)
Supply Voltage:
50 V
Package:
4 Leads Ceramic
more info

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